Multilayer electronic component with conductive resin layer
A multilayer electronic component includes a body including a dielectric layer and an internal electrode, and an external electrode disposed on the body. The external electrode includes an electrode layer connected to the internal electrode, an intermetallic compound layer disposed on the electrode layer and including a first intermetallic compound and glass, and a conductive resin layer disposed on the intermetallic compound layer and including a conductive connection portion including a second intermetallic compound and a low-melting-point metal, a plurality of metal particles, and a resin. A ratio of a length of a first direction component of a region having the first intermetallic compound, with respect to a length of a first direction component of the intermetallic compound layer, is 20% or more.
1. A multilayer electronic component comprising:
a body including a dielectric layer and an internal electrode; and
an external electrode disposed on the body,
wherein the external electrode includes:
an electrode layer connected to the internal electrode,
an intermetallic compound layer disposed on the electrode layer and including a plurality of portions spaced apart from each other in a cross section, each portion having a first intermetallic compound, and
a conductive resin layer disposed on the intermetallic compound layer and including a conductive connection portion including a second intermetallic compound and a low-melting-point metal, a plurality of metal particles, and a resin,
in the cross section, a ratio of a length of a first direction component of a region having the plurality of portions having the first intermetallic compound, with respect to a length of a first direction component of the intermetallic compound layer, is 20% or more, and
the intermetallic compound layer include glass to be disposed between two portions among the plurality of portions having the first intermetallic compound.
2. The multilayer electronic component of claim 1 , wherein a sum of a number of particles having a Feret diameter of 10 μm or more, among particles of the conductive connection portion and the plurality of metal particles, is N1, a total number of the particles of the conductive connection portion and the plurality of metal particles is N2, and a ratio (N1/N2) of the N1 to the N2 is 15% or more.
3. The multilayer electronic component of claim 1 , wherein a portion of the conductive connection portion is in direct contact with a portion of the first intermetallic compound included in the intermetallic compound layer.
4. The multilayer electronic component of claim 1 , wherein the first intermetallic compound includes Cu 3 Sn.
5. The multilayer electronic component of claim 1 , wherein the second intermetallic compound included in the conductive connection portion comprises at least one of Cu 3 Sn, Cu 6 Sn 5 and Ag 3 Sn.
6. The multilayer electronic component of claim 1 , wherein the plurality of metal particles include at least one of silver (Ag), copper (Cu), and silver (Ag)-coated copper (Cu), and the low-melting-point metal included in the conductive connection portion includes tin (Sn) or a tin (Sn) alloy.
7. The multilayer electronic component of claim 1 , wherein the electrode layer comprises a conductive metal and glass.
8. The multilayer electronic component of claim 1 , wherein the external electrode comprises a first plating layer disposed on the conductive resin layer.
9. The multilayer electronic component of claim 8 , wherein a portion of the conductive connection portion is in direct contact with a portion of the first plating layer and a portion of the first intermetallic compound included in the intermetallic compound layer.
10. The multilayer electronic component of claim 8 , further comprising a second plating layer disposed on the first plating layer.
11. A multilayer electronic component comprising:
a body including a dielectric layer and an internal electrode; and
an external electrode disposed on the body,
wherein the external electrode includes:
an electrode layer connected to the internal electrode,
an intermetallic compound layer disposed on the electrode layer and including a first intermetallic compound, and
a conductive resin layer disposed on the intermetallic compound layer and including a conductive connection portion including a second intermetallic compound and a low-melting-point metal, a plurality of metal particles, and a resin, and
a sum of a number of particles having a Feret diameter of 10 μm or more, among particles of the conductive connection portion and the plurality of metal particles, is N1, a total number of the particles of the conductive connection portion and the plurality of metal particles is N2, and a ratio (N1/N2) of the N1 to the N2 is 15% or more.
12. The multilayer electronic component of claim 11 , wherein a portion of the conductive connection portion is in direct contact with a portion of the first intermetallic compound included in the intermetallic compound layer.
13. The multilayer electronic component of claim 11 , wherein the first intermetallic compound includes Cu 3 Sn.
14. The multilayer electronic component of claim 11 , wherein the second intermetallic compound included in the conductive connection portion comprises at least one of Cu 3 Sn, Cu 6 Sn 5 and Ag 3 Sn.
15. The multilayer electronic component of claim 11 , wherein the plurality of metal particles comprise at least one of silver (Ag), copper (Cu), and silver (Ag)-coated copper (Cu), and the low-melting-point metal included in the conductive connection portion includes tin (Sn) or a tin (Sn) alloy.
16. The multilayer electronic component of claim 11 , wherein the electrode layer comprises a conductive metal and glass.
17. The multilayer electronic component of claim 11 , wherein the external electrode comprises a first plating layer disposed on the conductive resin layer.
18. The multilayer electronic component of claim 17 , wherein a portion of the conductive connection portion is in direct contact with a portion of the first plating layer and a portion of the first intermetallic compound included in the intermetallic compound layer.
19. The multilayer electronic component of claim 17 , further comprising a second plating layer disposed on the first plating layer.
20. The multilayer electronic component of claim 11 , wherein the intermetallic compound layer further includes glass.
21. A multilayer electronic component comprising:
a body including a dielectric layer and an internal electrode; and
an external electrode disposed on the body,
wherein the external electrode includes:
an electrode layer connected to the internal electrode,
an intermetallic compound layer disposed on the electrode layer and including Cu 3 Sn and glass, and
a conductive resin layer disposed on the intermetallic compound layer and including a conductive connection portion including a second intermetallic compound and a low-melting-point metal, a plurality of metal particles, and a resin, and
a portion of the conductive connection portion is in direct contact with a portion of the Cu 3 Sn included in the intermetallic compound layer.
22. The multilayer electronic component of claim 21 , wherein the second intermetallic compound included in the conductive connection portion comprises at least one of Cu 3 Sn, Cu 6 Sn 5 and Ag 3 Sn.
23. The multilayer electronic component of claim 21 , wherein the plurality of metal particles include at least one of silver (Ag), copper (Cu), and silver (Ag)-coated copper (Cu), and the low-melting-point metal included in the conductive connection portion includes tin (Sn) or a tin (Sn) alloy.