Crystals for detecting neutrons, gamma rays, and x rays and preparation methods thereof

1. A method for growing a crystal, comprising:

weighting reactants based on a molar ratio of the reactants according to a reaction equation (2) after a first preprocessing operation is performed on the reactants:

(1- x - y - z )X 2 O 3 +y Y 2 O 3 +SiO 2 +2 x CeO 2 +z Z 2 O 3 →X 2(1-x-y-z) Y 2y Ce 2x Z 2z SiO 5 +x/ 2O 2 ↑  (2),

wherein:

x=0.3%˜6%;

y=5%˜30%;

z=0.3%˜6%;

Z consists of at least one of Ga, Li, B, or Gd;

X consists of at least one of Ga, La, Gd, Pr, Ce, Nd, Pm, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb, Mn, Mg, Ca, Al, Fe, Sr, or Ba;

Z is different from X; and

a weight of SiO 2 exceeds a theoretical weight value of the SiO 2 calculated according to the reaction equation (2) by 0.01%˜0.999%;

placing the reactants on which a second preprocessing operation has been performed into a crystal growth device after an assembly processing operation is performed on at least one component of the crystal growth device;

introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and

activating the crystal growth device to grow the crystal based on a Czochralski technique.

2. The method of claim 1 , wherein the first preprocessing operation includes a roasting operation under 800° C.˜1400° C.

3. The method of claim 1 , wherein the at least one component of the crystal growth device includes a crucible, and the assembly processing operation includes at least one of:

performing an acid soaking and cleaning operation on the crucible;

determining whether a vertical distance between an upper edge of the crucible and an upper edge of an induction coil mounted in the crystal growth device is 0 mm˜∓50 mm, wherein “+” represents that the upper edge of the crucible is higher than the upper edge of the induction coil, and “−” represents that the upper edge of the crucible is lower than the upper edge of the induction coil; or

cleaning an impurity in the crucible.

4. The method of claim 1 , wherein the second preprocessing operation includes at least one of an ingredient mixing operation or a pressing operation.

5. The method of claim 1 , wherein the flowing gas includes one or more of oxygen, nitrogen, or inert gas.

6. The method of claim 1 , wherein the flowing gas includes oxygen, a volume ratio of the oxygen being 0.001%˜10%.

7. The method of claim 1 , wherein a flow rate of the flowing gas is 0.01 L/min-50 L/min.

8. The method of claim 1 , further comprising:

adding a seed crystal, the seed crystal including at least one of Cerium-doped Lutetium(-yttrium) oxyorthosilicate, Lanthanum-doped Lutetium(-yttrium) oxyorthosilicate, Praseodymium-doped Lutetium(-yttrium) oxyorthosilicate, or Neodymium-doped Lutetium(-yttrium) oxyorthosilicate.

9. The method of claim 8 , wherein a distance between the seed crystal and an upper surface of the reactants is 5 mm˜100 mm or a predetermined distance during melting the reactants during the crystal growth.

10. The method of claim 8 , further comprising:

sinking the seed crystal to 0.1 mm˜50 mm below a surface of a melt of the reactants by controlling a pulling rod during temperature adjustment; and

pulling up the pulling rod after maintaining a constant temperature for at least 0.1 hours˜1 hour.

11. The method of claim 1 , wherein a growth rate of the crystal is 0.01 mm/h˜6 mm/h during the crystal growth.

12. The method of claim 1 , wherein during a shouldering process of the crystal growth,

a shoulder angle is 30 degrees˜70 degrees, and

a shoulder length is 40 mm˜90 mm.

13. The method of claim 12 , wherein a constant diameter during the shouldering process is 10 mm˜200 mm.

14. The method of claim 1 , wherein during an ending process of the crystal growth,

an ending angle is 30 degrees˜70 degrees, and

an ending length is 40 mm˜90 mm.

15. The method of claim 1 , wherein at least one process in the crystal growth is controlled by a proportional-integral-derivative (PID) controller, the at least one process comprising at least one of a necking process, a shouldering process, a constant diameter growth process, an ending process, or a cooling process.

16. The method of claim 1 , wherein a reactant containing Ce includes CeO 2 , Ce 2 O 3 , Ce (CO 3 ) 2 , CeCl 3 , CeF 3 , CeS, CeBr 3 , CeRu 2 , CeCo 2 , CeRh 3 , CeN, CePd 3 , CeI 3 , CeF 4 , or CeCl 4 .