Semiconductor package and method of manufacturing the semiconductor package

1. A semiconductor package, comprising:

an interposer having a first surface and a second surface opposite to the first surface, and including

a plurality of bonding pads,

a first insulating layer on the first surface, and

a first redistribution wiring; and

first and second semiconductor devices on the interposer,

wherein

each bonding pad of the plurality of bonding pads includes

a first pad pattern provided to be exposed from the first surface and having a first width, the first width being a widest point of the first pad pattern, and

a second pad pattern provided on the first pad pattern at the widest point of the first pad pattern,

the second pad pattern is closer towards a center of the interposer than the first pad pattern, and the second pad pattern has a second width greater than the first width, and

the first redistribution wiring extends below a top surface of the first insulating layer and directly contacts the second pad pattern in the first insulating layer.

2. The semiconductor package of claim 1 , wherein the interposer further includes redistribution wirings therein that electrically connect the first and second semiconductor devices to the plurality of bonding pads and the first redistribution wiring is one of the redistribution wirings.

3. The semiconductor package of claim 2 , wherein the plurality of the bonding pads includes a connection pad that is electrically connected to the redistribution wiring and a dummy pad that is not electrically connected to the redistribution wiring.

4. The semiconductor package of claim 1 , wherein the first pad pattern includes a first metal material and the second pad pattern includes a second metal material different from the first metal material.

5. The semiconductor package of claim 4 , wherein the first metal material includes at least one of copper, aluminum and titanium.

6. The semiconductor package of claim 4 , wherein the second metal material includes at least one of nickel, molybdenum, titanium, gold, silver, chromium and tin.

7. The semiconductor package of claim 1 , wherein a difference between the second width of the second pad pattern and the first width of the first pad pattern is within a range of 0.1 μm to 2 μm.

8. The semiconductor package of claim 1 , wherein the first pad pattern has a first thickness and the second pad pattern has a second thickness less than the first thickness.

9. The semiconductor package of claim 8 , wherein the first thickness and the second thickness are within a range of 1 μm to 10 μm.

10. The semiconductor package of claim 1 , wherein the interposer further includes a plurality of second bonding pads provided to be exposed from the second surface,

and a width of the second bonding pad is smaller than a width of the bonding pad.

11. A semiconductor package, comprising:

an interposer including

a redistribution wiring layer having a first surface and a second surface opposite to the first surface and including a plurality of insulating layers and redistribution wirings formed therein, and

a plurality of bonding pads;

first and second semiconductor devices on the second surface of the interposer; and

a plurality of conductive connection members on respective first pad patterns,

wherein

each bonding pad of the plurality of bonding pads includes

a first pad pattern provided to be exposed from the first surface and having a first width, the first width being a widest point of the first pad pattern, and

a second pad pattern provided on the first pad pattern at the widest point of the first pad pattern,

the second pad pattern is closer towards a center of the interposer than the first pad pattern, and the second pad pattern has a second width greater than the first width, and

a first redistribution wiring of the redistribution wirings extends below a top surface of a first insulating layer and directly contacts the second pad pattern in the first insulating layer of the plurality of insulating layers.

12. The semiconductor package of claim 11 , wherein the plurality of the bonding pads includes a connection pad and a dummy pad,

the connection pad is electrically connected to the redistribution wiring, and

the dummy pad is not electrically connected to the redistribution wiring.

13. The semiconductor package of claim 11 , wherein the first pad pattern includes a first metal material and the second pad pattern includes a second metal material different from the first metal material.

14. The semiconductor package of claim 13 , wherein the first metal material includes at least one of copper, aluminum and titanium and the second metal material includes at least one of nickel, molybdenum, titanium, gold, silver, chromium and tin.

15. The semiconductor package of claim 11 , wherein a difference between the second width of the second pad pattern and the first width of the first pad pattern is within a range of 0.1 μm to 2 μm.

16. The semiconductor package of claim 11 , wherein the first pad pattern has a first thickness and the second pad pattern has a second thickness less than the first thickness.

17. The semiconductor package of claim 16 , wherein the first thickness and the second thickness are within a range of 1 μm to 10 μm.

18. The semiconductor package of claim 11 , wherein the interposer further includes a plurality of second bonding pads provided to be exposed from the second surface,

and a width of the second bonding pad is smaller than a width of the bonding pad.

19. The semiconductor package of claim 18 , further comprising a plurality of second conductive connection members on respectively second bonding pads.

20. A semiconductor package, comprising:

a package substrate;

an interposer on the package substrate, having a first surface and a second surface opposite to the first surface, and including

a plurality of first bonding pads,

a plurality of second bonding pads,

a first insulating layer on the first surface, and

a first redistribution wiring,

wherein

each first bonding pad of the plurality of first bonding pads includes

a first pad pattern provided to be exposed from the first surface and having a first width, the first width being a widest point of the first pad pattern and

a second pad pattern provided on the first pad pattern at the widest point of the first pad pattern,

the second pad pattern is closer towards a center of the interposer than the first pad pattern, and the second pad pattern has a second width greater than the first width,

the plurality of second bonding pads being exposed to the second surface, and

the first redistribution wiring extends below a top surface of the first insulating layer and directly contacts the second pad pattern in the first insulating layer;

first and second semiconductor devices spaced apart from each other on the second surface of the interposer;

a plurality of first conductive connection members on respective first pad patterns; and

a plurality of second conductive connection members on respective second bonding pads,

wherein a width of the second bonding pad is smaller than the first width of the first pad pattern.