IP Library › Granted Patent US 12,021,051
Granted Patent B2
US 12,021,051 · App. 17/384,901 · Granted Jun 25, 2024

Semiconductor package and method of forming the same

Inventors: Hsien-Wei Chen (Hsinchu, TW); An-Jhih Su (Taoyuan County, TW)
Assignee: Taiwan Semiconductor Manufacturing Company Limited
H01L24/17H01L21/568H01L23/49816H01L23/49838H01L24/03H01L24/05H01L24/19H01L24/20H01L24/81H01L24/97H01L25/105H01L25/18H01L24/16H01L24/32H01L24/48H01L24/73H01L24/83H01L24/92H01L25/0657H01L2224/02335H01L2224/0401H01L2224/04042H01L2224/04105H01L2224/05011H01L2224/12105H01L2224/16227H01L2224/17181H01L2224/19H01L2224/32145H01L2224/32225H01L2224/48091H01L2224/48227H01L2224/73265H01L2224/83005H01L2224/92244H01L2225/0651H01L2225/06568H01L2225/1035H01L2225/1041H01L2225/1058H01L2225/1088H01L2924/00H01L2924/00014H01L2924/10253H01L2924/1032H01L2924/1461H01L2924/15311H01L2924/181H01L2924/182H01L2924/19041H01L2924/19042H01L2924/19043H01L2924/19105
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Quick Facts
Patent No.
US 12,021,051
App. No.
17/384,901
Granted
Jun 25, 2024
Kind
B2
Abstract

A method of forming a semiconductor package includes receiving a carrier, coating the carrier with a bonding layer, forming a first insulator layer over the bonding layer, forming a backside redistribution layer over the first insulator layer, forming a second insulator layer over the backside redistribution layer, patterning the second insulator layer to form a recess that extends through the second insulator layer and to the backside redistribution layer, filling the recess with a solder, and coupling a surface-mount device (SMD) to the solder.

Claims (60)

1. A method of forming a semiconductor package, the method comprising:

receiving a carrier;

coating the carrier with a bonding layer;

forming a first insulator layer over the bonding layer;

forming a backside redistribution layer over the first insulator layer;

providing a pad having a hole over the backside redistribution layer;

forming a second insulator layer over the backside redistribution layer;

patterning the second insulator layer to form a recess that extends through the second insulator layer and to the pad;

filling the recess with a solder;

coupling a surface-mount device (SMD) to the solder;

providing a molding compound over the second insulator layer;

providing a via that extends to the backside redistribution layer through the molding compound and the second insulator layer; and

forming a front redistribution layer coupled to the via.

2. The method of claim 1 , further comprising providing the molding compound over the SMD.

3. The method of claim 1 , further comprising providing a chip adjacent the molding compound, wherein providing the molding compound includes

providing the molding compound over the chip, and

removing the molding compound on a top surface of the chip.

4. The method of claim 3 , further comprising forming the front redistribution layer coupled to the top surface of the chip.

5. The method of claim 1 , wherein providing the via includes:

forming a via hole that extends through the molding compound and the second insulator layer and to the backside redistribution layer; and

filling the via hole with a via material.

6. The method of claim 1 , further comprising providing a plurality of metal bumps coupled to the front redistribution layer.

7. The method of claim 1 , further comprising:

debonding the carrier from the semiconductor package; and

providing a plurality of metal bumps extending through the first insulator layer and coupled to the backside redistribution layer.

8. A method of forming a semiconductor package comprising a chip and a component, comprising:

providing a temporary bonding layer over a carrier;

forming an insulator layer over the temporary bonding;

forming a backside redistribution layer over the insulator layer;

providing a pre-solder on a pad having a hole in the backside redistribution layer;

providing the chip and the component over the backside redistribution layer;

contacting the component to the pre-solder; and

providing a molding compound over the backside redistribution layer.

9. The method of claim 8 , further comprising:

providing the molding compound over the component and adjacent to the chip;

opening a via hole in the molding compound;

providing a via in the via hole;

providing a front redistribution layer over the chip and the via to connect the chip and the component by using the backside redistribution layer, the via, and the front redistribution layer;

debonding the semiconductor package from the carrier; and

providing the semiconductor package over and connected to a printed circuit board.

10. The method of claim 8 , wherein the hole is a notch.

11. The method of claim 8 , wherein the hole is a slot.

12. The method of claim 8 , wherein the pad is a u-shape pad and the hole is an open structure.

13. The method of claim 9 , further comprising providing a plurality of metal bumps connected to the chip and the component by the front redistribution layer.

14. The method of claim 8 , wherein providing the chip and the component over the backside redistribution layer comprises providing a surface-mount device (SMD) over the backside redistribution layer.

15. The method of claim 10 , wherein the notch interrupts a laterally-extending end edge of the pad by extending longitudinally inward from the laterally-extending end edge.

16. The method of claim 15 , wherein the notch has an open end at the laterally-extending end edge of the pad and a closed end longitudinally opposite the open end.

17. The method of claim 16 , wherein the notch is located between a first side edge and a second side edge of the pad to form (i) a first tab bounded by a first side of the notch and the end edge and the first side edge and (ii) a second tab bounded by a second side of the notch and the end edge.

18. A method for forming a semiconductor package comprising a chip and a component, comprising:

providing a temporary bonding layer over a carrier;

forming an insulator layer over the temporary bonding;

forming a backside redistribution layer over the insulator layer;

providing the chip and the component over the backside redistribution layer;

providing a molding compound over the backside redistribution layer; and

providing a pre-solder on a pad having a hole in the backside redistribution layer.

19. The method of claim 1 , further comprising:

removing a portion of the second insulator layer to form a recess and to expose the backside redistribution layer;

filling the recess with a conductive material; and

providing the molding compound over the conductive material.

20. The method of claim 8 , further comprising a via interconnecting the backside and front redistribution layers.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2021
From: CHEN, HSIEN-WEI; SU, AN-JHIH
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
Reel/Frame 056974/0066 →
Continuity (4)
Division 16142173 · Sep 26, 2018
Division 15355145 · Nov 18, 2016
Division 14470999 · Aug 28, 2014
Related Publication 20210351149A1 · Nov 11, 2021