Semiconductor package and method of forming the same
A method of forming a semiconductor package includes receiving a carrier, coating the carrier with a bonding layer, forming a first insulator layer over the bonding layer, forming a backside redistribution layer over the first insulator layer, forming a second insulator layer over the backside redistribution layer, patterning the second insulator layer to form a recess that extends through the second insulator layer and to the backside redistribution layer, filling the recess with a solder, and coupling a surface-mount device (SMD) to the solder.
1. A method of forming a semiconductor package, the method comprising:
receiving a carrier;
coating the carrier with a bonding layer;
forming a first insulator layer over the bonding layer;
forming a backside redistribution layer over the first insulator layer;
providing a pad having a hole over the backside redistribution layer;
forming a second insulator layer over the backside redistribution layer;
patterning the second insulator layer to form a recess that extends through the second insulator layer and to the pad;
filling the recess with a solder;
coupling a surface-mount device (SMD) to the solder;
providing a molding compound over the second insulator layer;
providing a via that extends to the backside redistribution layer through the molding compound and the second insulator layer; and
forming a front redistribution layer coupled to the via.
2. The method of claim 1 , further comprising providing the molding compound over the SMD.
3. The method of claim 1 , further comprising providing a chip adjacent the molding compound, wherein providing the molding compound includes
providing the molding compound over the chip, and
removing the molding compound on a top surface of the chip.
4. The method of claim 3 , further comprising forming the front redistribution layer coupled to the top surface of the chip.
5. The method of claim 1 , wherein providing the via includes:
forming a via hole that extends through the molding compound and the second insulator layer and to the backside redistribution layer; and
filling the via hole with a via material.
6. The method of claim 1 , further comprising providing a plurality of metal bumps coupled to the front redistribution layer.
7. The method of claim 1 , further comprising:
debonding the carrier from the semiconductor package; and
providing a plurality of metal bumps extending through the first insulator layer and coupled to the backside redistribution layer.
8. A method of forming a semiconductor package comprising a chip and a component, comprising:
providing a temporary bonding layer over a carrier;
forming an insulator layer over the temporary bonding;
forming a backside redistribution layer over the insulator layer;
providing a pre-solder on a pad having a hole in the backside redistribution layer;
providing the chip and the component over the backside redistribution layer;
contacting the component to the pre-solder; and
providing a molding compound over the backside redistribution layer.
9. The method of claim 8 , further comprising:
providing the molding compound over the component and adjacent to the chip;
opening a via hole in the molding compound;
providing a via in the via hole;
providing a front redistribution layer over the chip and the via to connect the chip and the component by using the backside redistribution layer, the via, and the front redistribution layer;
debonding the semiconductor package from the carrier; and
providing the semiconductor package over and connected to a printed circuit board.
10. The method of claim 8 , wherein the hole is a notch.
11. The method of claim 8 , wherein the hole is a slot.
12. The method of claim 8 , wherein the pad is a u-shape pad and the hole is an open structure.
13. The method of claim 9 , further comprising providing a plurality of metal bumps connected to the chip and the component by the front redistribution layer.
14. The method of claim 8 , wherein providing the chip and the component over the backside redistribution layer comprises providing a surface-mount device (SMD) over the backside redistribution layer.
15. The method of claim 10 , wherein the notch interrupts a laterally-extending end edge of the pad by extending longitudinally inward from the laterally-extending end edge.
16. The method of claim 15 , wherein the notch has an open end at the laterally-extending end edge of the pad and a closed end longitudinally opposite the open end.
17. The method of claim 16 , wherein the notch is located between a first side edge and a second side edge of the pad to form (i) a first tab bounded by a first side of the notch and the end edge and the first side edge and (ii) a second tab bounded by a second side of the notch and the end edge.
18. A method for forming a semiconductor package comprising a chip and a component, comprising:
providing a temporary bonding layer over a carrier;
forming an insulator layer over the temporary bonding;
forming a backside redistribution layer over the insulator layer;
providing the chip and the component over the backside redistribution layer;
providing a molding compound over the backside redistribution layer; and
providing a pre-solder on a pad having a hole in the backside redistribution layer.
19. The method of claim 1 , further comprising:
removing a portion of the second insulator layer to form a recess and to expose the backside redistribution layer;
filling the recess with a conductive material; and
providing the molding compound over the conductive material.
20. The method of claim 8 , further comprising a via interconnecting the backside and front redistribution layers.