Semiconductor package and method of manufacturing the semiconductor package
A semiconductor package includes a support member, a semiconductor chip arranged in the support member such that a front surface and a backside surface of the semiconductor chip are exposed from a second surface of the support member and a first surface opposite to the second surface respectively, a lower redistribution wiring layer covering the second surface of the support member and including first redistribution wirings electrically connected to chip pads provided at the front surface of the semiconductor chip and vertical connection structures of the support member respectively, and an upper redistribution wiring layer covering the first surface of the support substrate, and including second redistribution wirings electrically connected to the vertical connection structures and a thermal pattern provided on the exposed backside surface of the semiconductor chip.
1. A semiconductor package, comprising:
a lower redistribution wiring layer having a plurality of first redistribution wirings;
a semiconductor chip disposed on the lower redistribution wiring layer and having a plurality of chip pads electrically connected to the plurality of first redistribution wirings;
a molding member on the lower redistribution wiring layer, the molding member covering the semiconductor chip, the molding member exposing a backside surface of the semiconductor chip;
a plurality of conductive connection columns penetrating the molding member and extending from an upper surface of the lower redistribution wiring layer; and
an upper redistribution wiring layer on an upper surface of the molding member and covering the backside surface of the semiconductor chip, and including a plurality of second redistribution wirings electrically connected to the conductive connection columns and a metallic thermal pattern provided on the exposed backside surface of the semiconductor chip.
2. The semiconductor package of claim 1 , wherein the semiconductor chip is arranged on the lower redistribution wiring layer such that a front surface on which the plurality of chip pads are formed faces the lower redistribution wiring layer.
3. The semiconductor package of claim 2 , wherein the front surface of the semiconductor chip is coplanar with a lower surface of the molding member.
4. The semiconductor package of claim 1 , wherein the backside surface of the semiconductor chip is coplanar with the upper surface of the molding member.
5. The semiconductor package of claim 1 , wherein the upper redistribution wiring layer further includes a barrier layer provided between the metallic thermal pattern and the backside surface of the semiconductor chip.
6. The semiconductor package of claim 5 , wherein the barrier layer includes at least one of a seed layer, an oxide layer, and an adhesive layer.
7. The semiconductor package of claim 1 , wherein the metallic thermal pattern includes a first thickness, and
wherein each of the plurality of first redistribution wirings has a second thickness less than the first thickness.
8. The semiconductor package of claim 7 , wherein the first thickness of the metallic thermal pattern has a value from 3 μm to 50 μm, and
wherein the second thickness of each of the plurality of first redistribution wirings has a value from 3 μm to 8 μm.
9. The semiconductor package of claim 1 , wherein the plurality of second redistribution wirings includes a first upper redistribution wiring and a second upper redistribution wiring stacked in at least two levels.
10. The semiconductor package of claim 9 , wherein the upper redistribution wiring layer further includes a ground pattern coplanar with the second upper redistribution wiring and electrically connected to the metallic thermal pattern.
11. A semiconductor package, comprising:
a lower redistribution wiring layer including a plurality of first redistribution wirings;
at least one semiconductor chip including a plurality of chip pads and arranged on the lower redistribution wiring layer such that a front surface on which the plurality of chip pads are formed faces the lower redistribution wiring layer and are electrically connected to the plurality of first redistribution wirings;
a molding member on an upper surface of the lower redistribution wiring layer, the molding member covering a side surface of the semiconductor chip, the molding member exposing a backside surface of the semiconductor chip;
a plurality of conductive connection columns penetrating the molding member and extending from the upper surface of the lower redistribution wiring layer;
an upper redistribution wiring layer covering an upper surface of the molding member, and including a plurality of second redistribution wirings electrically connected to the plurality of conductive connection columns and a metallic thermal pattern provided on the exposed backside surface of the semiconductor chip; and
a plurality of outer connection members arranged on a lower surface of the lower redistribution wiring layer and electrically connected to the plurality of first redistribution wirings,
wherein the backside surface of the semiconductor chip is coplanar with the upper surface of the molding member, and
a first thickness of the metallic thermal pattern has a value from 3 μm to 50 μm.
12. The semiconductor package of claim 11 , wherein the upper redistribution wiring layer further includes a barrier layer provided between the metallic thermal pattern and the backside surface of the semiconductor chip.
13. The semiconductor package of claim 12 , wherein the barrier layer includes at least one of a seed layer, an oxide layer, and an adhesive layer.
14. The semiconductor package of claim 11 , wherein the plurality of second redistribution wirings include a first upper redistribution wiring and a second upper redistribution wiring stacked in two levels, and
wherein the metallic thermal pattern is coplanar with the first upper redistribution wiring.
15. The semiconductor package of claim 14 , wherein the upper redistribution wiring layer further includes a ground pattern electrically connected to the metallic thermal pattern.
16. A semiconductor package, comprising:
a lower redistribution wiring layer including a plurality of first redistribution wirings;
a semiconductor chip arranged on the lower redistribution wiring layer, and having a plurality of chip pads provided at a front surface to be electrically connected to the plurality of first redistribution wirings;
a molding member on the lower redistribution wiring layer to surround the semiconductor chip, and exposing a backside surface of the semiconductor chip, the molding member including a plurality of vertical connection structures that penetrate at least a portion of the molding member;
a barrier layer provided on the exposed backside surface of the semiconductor chip; and
an upper redistribution wiring layer on the molding member, and including a plurality of second redistribution wirings electrically connected to the plurality of vertical connection structures, and a metallic thermal pattern provided on the barrier layer.
17. The semiconductor package of claim 16 , wherein the barrier layer includes at least one of a seed layer, an oxide layer, and an adhesive layer.
18. The semiconductor package of claim 17 , wherein a thickness of the metallic thermal pattern has a value from 3 μm to 50 μm.
19. The semiconductor package of claim 16 , wherein the plurality of second redistribution wirings include a first upper redistribution wiring and a second upper redistribution wiring stacked in at least two levels, and
wherein the metallic thermal pattern is coplanar with the first upper redistribution wiring.
20. The semiconductor package of claim 19 , wherein the upper redistribution wiring layer further includes a ground pattern coplanar with the second upper redistribution wiring and electrically connected to the metallic thermal pattern.