Substrate treatment method and substrate treatment apparatus
The inventive substrate treatment method includes: an organic solvent supplying step of supplying an organic solvent having a smaller surface tension than a rinse liquid to the upper surface of a substrate so that rinse liquid adhering to the upper surface of the substrate is replaced with the organic solvent; a higher temperature maintaining step of maintaining the upper surface of the substrate at a predetermined temperature higher than the boiling point of the organic solvent to thereby form a gas film of the organic solvent on the entire upper surface of the substrate including the gap of the minute pattern and to form a liquid film of the organic solvent on the gas film, the higher temperature maintaining step being performed after the organic solvent supplying step is started; and an organic solvent removing step of removing the organic solvent liquid film from the upper surface of the substrate.
1. A substrate treatment method comprising:
a rinsing step of supplying a rinse liquid to an upper surface of a substrate formed with a minute pattern, the substrate being horizontally held by a substrate holding unit;
an organic solvent supplying step of supplying an organic solvent having a smaller surface tension than the rinse liquid to the upper surface of the substrate to replace the rinse liquid adhering to the upper surface of the substrate with the organic solvent with a temperature of the upper surface of the substrate being lower than a boiling point of the organic solvent;
a higher temperature maintaining step of maintaining the upper surface of the substrate at a predetermined higher temperature that is higher than the boiling point of the organic solvent to thereby form a gas film of the organic solvent on an entire upper surface of the substrate including a gap of the minute pattern and to form an organic solvent liquid film on the gas film; and
an organic solvent removing step of removing the organic solvent liquid film formed on the gas film, the organic solvent removing step being started after the gas film is formed in the higher temperature maintaining step.
2. The substrate treatment method according to claim 1 , wherein the higher temperature maintaining step includes the step of heating a lower surface of the substrate so as to maintain the upper surface of the substrate at the predetermined higher temperature.
3. The substrate treatment method according to claim 2 ,
wherein the higher temperature maintaining step is the step of, while rotating the substrate held by the substrate holding unit, maintaining the upper surface of the substrate at the predetermined higher temperature,
wherein a rotation speed of the substrate in the higher temperature maintaining step is set to 10 rpm to 500 rpm.
4. The substrate treatment method according to claim 1 , wherein the higher temperature maintaining step continues until all the organic solvent liquid film is removed from the upper surface of the substrate.
5. The substrate treatment method according to claim 1 , wherein the organic solvent removing step removes the organic solvent liquid film from the upper surface of the substrate while maintaining the organic solvent liquid film in a form of liquid mass.
6. The substrate treatment method according to claim 5 , wherein the organic solvent removing step includes the step of spouting a gas toward a rotation center of the upper surface of the substrate held by the substrate holding unit while rotating the substrate.
7. The substrate treatment method according to claim 5 , wherein the organic solvent removing step includes the step of spraying a gas in a form of zone stream toward the upper surface of the substrate held by the substrate holding unit while moving a gas applying zone on the upper surface of the substrate.
8. The substrate treatment method according to claim 5 , wherein the organic solvent removing step includes the step of tilting the substrate held by the substrate holding unit with respect to a horizontal plane.
9. The substrate treatment method according to claim 5 , wherein the organic solvent removing step includes the step of heating the substrate held by the substrate holding unit sequentially from a center portion of the substrate toward a peripheral portion of the substrate.
10. The substrate treatment method according to claim 1 , wherein the temperature of the upper surface of the substrate in the higher temperature maintaining step is set such that the organic solvent liquid film is prevented from boiling in the higher temperature maintaining step.
11. The substrate treatment method according to claim 1 , wherein the predetermined higher temperature is higher by 10° C. to 50° C. than the boiling point of the organic solvent.
12. The substrate treatment method according to claim 1 , wherein a substrate temperature in the higher temperature maintaining step is set such that a gas-phase organic solvent contained in the organic solvent gas film is prevented from cleaving through the organic solvent liquid film to above the organic solvent liquid film.
13. The substrate treatment method according to claim 1 , wherein a duration of the higher temperature maintaining step is set such that a gas-phase organic solvent contained in the organic solvent gas film is prevented from cleaving through the organic solvent liquid film to above the organic solvent liquid film.
14. The substrate treatment method according to claim 1 , wherein a thickness of the organic solvent liquid film in the higher temperature maintaining step is set such that the organic solvent liquid film is prevented from being split in the higher temperature maintaining step.
15. The substrate treatment method according to claim 1 , further comprising a spin drying step of rotating the substrate held by the substrate holding unit to dry the substrate after the organic solvent removing step.