Wet etching chemistry and method of forming semiconductor device using the same
A wet etching chemistry to selectively remove a polymer residue on an opening embedded in a low-k dielectric layer and an underlying stop layer in a process of forming an interconnect structure is provided. The wet etching chemistry includes: two type of organic solvents, wherein a concentration of the two type of organic solvents is greater than or equal to 70%; an Alkali source amine, at least comprising a tertiary amine; an inhibitor; and water. In some embodiment, the wet etching chemistry is free of a peroxide to avoid damage to the WdC hard mask.
1. A wet etching chemistry, comprising:
two type of organic solvents, wherein a concentration of the two type of organic solvents is greater than or equal to 70%;
a buffer system, at least comprising a tertiary amine;
an inhibitor, wherein the inhibitor comprises benzotriazole (BTA), and a concentration of the inhibitor is between 0.1% and 3.0%; and
water, wherein the wet etching chemistry is free of a peroxide and a chelator, wherein the wet etching chemistry has a pH value greater than or equal to 10 and is configured to remove a polymer residue.
2. The wet etching chemistry according to claim 1 , wherein the concentration of the two type of organic solvents is between 70% and 80%.
3. The wet etching chemistry according to claim 1 , wherein the two type of organic solvents comprises:
a first organic solvent, comprising ethylene glycol butyl ether (EGBE), diethylene glycol monobutyl ether (DEGBE), or a combination thereof; and
a second organic solvent, comprising ethylene glycol (EG), diethylene glycol (DEG), or a combination thereof, wherein the first organic solvent has a first concentration greater than a second concentration of the second organic solvent.
4. The wet etching chemistry according to claim 3 , wherein:
the first concentration of the first organic solvent is between 50% and 80%; and
the second concentration of the second organic solvent is between 1% and 10%.
5. The wet etching chemistry according to claim 4 , wherein a polarity of the first organic solvent is lower than a polarity of the second organic solvent.
6. The wet etching chemistry according to claim 1 , wherein the buffer system comprises:
a first amine, comprising the tertiary amine of triethanolamine (TEA), triethylamine (TEN), or a combination thereof; and
a second amine comprising N-Methylmorpholine (NMM), 3-morpholinopropylamine or a combination thereof.
7. The wet etching chemistry according to claim 1 , wherein the buffer system has a boiling point greater than or equal to 100° C.
8. A method of forming a semiconductor device, comprising:
forming a metal structure on a substrate;
forming a stop layer, a dielectric layer, and a patterned hard mask layer in sequence on the metal structure;
performing a dry etching process by using the patterned hard mask layer as mask to form an opening penetrating through the dielectric layer and partially extending into the stop layer; and
performing a wet etching process by using a wet etching chemistry to extend the opening down and reach the metal structure, wherein the wet etching chemistry comprises:
two type of organic solvents, wherein a concentration of the two type of organic solvents is greater than or equal to 70%;
an Alkali source amine, at least comprising a tertiary amine;
an inhibitor, wherein the inhibitor comprises benzotriazole (BTA), and a concentration of the inhibitor is between 0.1% and 3.0%; and
water, wherein the wet etching chemistry is free of a peroxide and a chelator, wherein the wet etching chemistry has a pH value greater than or equal to 10 and is configured to remove a polymer residue.
9. The method according to claim 8 , wherein the metal structure comprises:
a metal layer comprising copper, cobalt, ruthenium, or a combination thereof; and
a cap layer overlying the metal layer and comprising a metal material different from the metal layer.
10. The method according to claim 9 , wherein the cap layer comprises cobalt, ruthenium, or a combination thereof.
11. The method according to claim 9 , wherein an etching rate of the wet etching chemistry to the stop layer is greater than an etching rate of the wet etching chemistry to the cap layer.
12. The method according to claim 8 , wherein a material of the stop layer comprises silicon oxide, silicon nitride, silicon carbon nitride (SiCN), silicon carbon oxide (SiCO), silicon carbide (SiC), metal oxide, metal nitride, metal oxynitride, or a combination thereof.
13. The method according to claim 8 , wherein a material of the patterned hard mask layer comprises silicon oxide, silicon nitride, silicon carbide, amorphous carbon, tungsten-doped carbon (WdC), tungsten nitride (WN), titanium nitride (TiN), or a combination thereof.
14. The method according to claim 8 , further comprising:
forming a barrier material to cover a surface of the opening and a top surface of the metal structure, and a top surface of the patterned hard mask layer;
forming a conductive material on the barrier material to fill in the opening; and
performing a planarization process to remove a portion of the barrier material, a portion of the conductive material, and the patterned hard mask layer to expose the dielectric layer, thereby forming a conductive feature being in contact with the metal structure.
15. The method according to claim 8 , wherein the Alkali source amine comprises:
a first amine, comprising a tertiary amine of triethanolamine (TEA), triethylamine (TEN), or a combination thereof; and
a second amine comprising N-Methylmorpholine (NMM), 3-morpholinopropylamine or a combination thereof.
16. A wet etching chemistry to selectively remove a polymer residue on an opening embedded in a low-k dielectric layer and an underlying stop layer in a process of forming an interconnect structure, the wet etching chemistry comprising:
two type of organic solvents, wherein a concentration of the two type of organic solvents is greater than or equal to 70%;
an Alkali source amine, at least comprising a tertiary amine;
an inhibitor, wherein the inhibitor comprises benzotriazole (BTA), and a concentration of the inhibitor is between 0.1% and 3.0%; and
water, wherein the wet etching chemistry is free of a peroxide and a chelator, and the wet etching chemistry has a pH value greater than or equal to 10.
17. The wet etching chemistry according to claim 16 , wherein the two type of organic solvents comprises:
a first organic solvent, comprising ethylene glycol butyl ether (EGBE), diethylene glycol monobutyl ether (DEGBE), or a combination thereof; and
a second organic solvent, comprising ethylene glycol (EG), diethylene glycol (DEG), or a combination thereof, wherein the first organic solvent has a polarity lower than a polarity of the second organic solvent.
18. The wet etching chemistry according to claim 17 , wherein:
the first concentration of the first organic solvent is between 50% and 80%; and
the second concentration of the second organic solvent is between 1% and 10%.
19. The wet etching chemistry according to claim 16 , wherein the Alkali source amine comprises:
a first amine, comprising the tertiary amine of triethanolamine (TEA), triethylamine (TEN), or a combination thereof; and
a second amine comprising N-Methylmorpholine (NMM), 3-morpholinopropylamine or a combination thereof.
20. The wet etching chemistry according to claim 16 , wherein the Alkali source amine has a boiling point greater than or equal to 100° C.