IP Library › Granted Patent US 12,057,336
Granted Patent B2
US 12,057,336 · App. 17/190,885 · Granted Aug 6, 2024

Estimating heights of defects in a wafer by scaling a 3D model using an artificial neural network

Inventors: Shashank Shrikant Agashe (Bangalore, IN); Gaurav Kumar (Bangalore, IN); Sathyanarayanan Kulasekaran (Bangalore, IN); Chanwoo Park (Suwon-si, KR); Yunje Cho (Seoul, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H01L21/67288G01N23/2251G06T7/001G06T17/00G06T19/20G01N2223/07G01N2223/418G01N2223/507G01N2223/6116G01N2223/646G06T2207/10061G06T2207/30148G06T2219/2016
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Quick Facts
Patent No.
US 12,057,336
App. No.
17/190,885
Granted
Aug 6, 2024
Kind
B2
Abstract

The present disclosure relates to a method for estimating heights of defects in a wafer. The method comprises creating an un-calibrated 3D model of a defect in a wafer, determining one or more attributes associated with the un-calibrated 3D model, transforming the un-calibrated 3D model to a calibrated 3D model, and estimating a height of the defect using the calibrated 3D model. Creating an un-calibrated 3D model corresponds to a defect present in a wafer based on a plurality of Scanning Electron Microscope (SEM) images of the defect. Transforming the un-calibrated 3D model to a calibrated 3D model uses a scaling factor corresponding to the determined one or more attributes associated with the un-calibrated 3D model. A height of the defect is estimated based on the calibrated 3D model of the defect.

Claims (39)

1. A method comprising:

providing a plurality of Scanning Electron Microscope (SEM) images of a defect in a wafer;

determining an un-calibrated 3D model corresponding to the defect, based on the plurality of SEM images of the defect;

determining one or more size attributes associated with the un-calibrated 3D model;

transforming the un-calibrated 3D model to a calibrated 3D model using a scaling factor corresponding to the determined one or more size attributes associated with the un-calibrated 3D model;

estimating a height of the defect based on the calibrated 3D model associated with the defect; and

performing a manufacturing process on the wafer based on the estimated height of the defect.

2. The method as claimed in claim 1 , wherein the transforming further comprises:

providing the determined one or more size attributes as an input to a trained model;

determining, by the trained model, the scaling factor based on the one or more size attributes; and

modifying a scale of the un-calibrated 3D model based on the determined scaling factor, wherein the calibrated 3D model is obtained based on the modified scale of the un-calibrated 3D model.

3. The method as claimed in claim 1 , further comprising:

generating a normal map based on the plurality of SEM images, wherein the normal map comprises first shape information of the defect;

generating a candidate normal map based on the calibrated 3D model, wherein the candidate normal map comprises second shape information of the defect;

comparing the first shape information and the second shape information; and

validating the calibrated 3D model based on the comparison.

4. The method as claimed in claim 1 , wherein estimating the height of the defect further comprises:

determining a maximum z-value of the calibrated 3D model; and

selecting the maximum z-value of the calibrated 3D model as the height of the defect.

5. A method comprising:

providing a plurality of Scanning Electron Microscope (SEM) images of a defect in a wafer;

determining an un-calibrated 3D model corresponding to the defect, based on the plurality of SEM images of the defect;

determining one or more size attributes associated with the un-calibrated 3D model;

performing a convolution operation based on the one or more size attributes of the uncalibrated 3D model using a convolutional neural network to obtain a scaling factor;

transforming the un-calibrated 3D model to a calibrated 3D model using the scaling factor corresponding to the determined one or more size attributes associated with the un-calibrated 3D model;

estimating a height of the defect based on the calibrated 3D model associated with the defect: and

performing a manufacturing process on the wafer based on the estimated height of the defect.

6. The method as claimed in claim 5 , wherein the transforming further comprises:

providing the determined one or more size attributes as an input to a trained model;

determining, by the trained model, the scaling factor based on the one or more size attributes; and

modifying a scale of the un-calibrated 3D model based on the determined scaling factor, wherein the calibrated 3D model is obtained based on the modified scale of the un-calibrated 3D model.

7. The method as claimed in claim 5 , further comprising:

generating a normal map based on the plurality of SEM images, wherein the normal map comprises first shape information of the defect;

generating a candidate normal map based on the calibrated 3D model, wherein the candidate normal map comprises second shape information of the defect;

comparing the first shape information and the second shape information; and

validating the calibrated 3D model based on the comparison.

8. The method as claimed in claim 5 , wherein estimating the height of the defect further comprises:

determining a maximum z-value of the calibrated 3D model; and

selecting the maximum z-value of the calibrated 3D model as the height of the defect.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 3, 2021
From: AGASHE, SHASHANK SHRIKANT; KUMAR, GAURAV; KULASEKARAN, SATHYANARAYANAN; PARK, CHANWOO; CHO, YUNJE
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 055543/0226 →
Priority Claims (1)
IN 202041054786 · Dec 16, 2020 · national
Continuity (1)
Related Publication 20220189806A1 · Jun 16, 2022