Liquid crystal display device
A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
1. A display device comprising:
a first conductive layer having a function of a gate electrode of a transistor;
a first insulating layer over the first conductive layer;
a semiconductor layer over the first insulating layer, the semiconductor layer having a channel formation region of the transistor;
a second conductive layer over the semiconductor layer, the second conductive layer having a function of one of a source electrode and a drain electrode of the transistor;
a third conductive layer over the semiconductor layer, the third conductive layer having a function of the other of the source electrode and the drain electrode of the transistor;
a second insulating layer having a region in contact with a surface of the second conductive layer and a region in contact with a surface of the third conductive layer;
a fourth conductive layer over the second insulating layer, the fourth conductive layer having a function of a wiring; and
a pixel electrode over the second insulating layer,
wherein the second conductive layer is electrically connected to the fourth conductive layer through a first contact hole in the second insulating layer,
wherein the third conductive layer is electrically connected to the pixel electrode through a second contact hole in the second insulating layer,
wherein the fourth conductive layer has a stacked-layer structure,
wherein a thickness of the second conductive layer is smaller than a thickness of the fourth conductive layer, and
wherein an area of the second conductive layer overlapping with the semiconductor layer overlaps with the first conductive layer.
2. The display device according to claim 1 ,
wherein, in a plan view, the first conductive layer has a region intersecting with the fourth conductive layer.
3. The display device according to claim 1 ,
wherein the fourth conductive layer has a region overlapping with the first conductive layer through the second conductive layer and the semiconductor layer.
4. The display device according to claim 1 ,
wherein the second conductive layer has a single layer.
5. The display device according to claim 1 ,
wherein the pixel electrode comprises a slit.
6. A display device comprising:
a first conductive layer having a function of a gate electrode of a transistor;
a first insulating layer over the first conductive layer;
a semiconductor layer over the first insulating layer, the semiconductor layer having a channel formation region of the transistor;
a second conductive layer over the semiconductor layer, the second conductive layer having a function of one of a source electrode and a drain electrode of the transistor;
a third conductive layer over the semiconductor layer, the third conductive layer having a function of the other of the source electrode and the drain electrode of the transistor;
a second insulating layer having a region in contact with a surface of the second conductive layer and a region in contact with a surface of the third conductive layer;
a fourth conductive layer over the second insulating layer, the fourth conductive layer having a function of a wiring; and
a pixel electrode over the second insulating layer,
wherein the fourth conductive layer is electrically connected to the fourth conductive layer through a first contact hole in the second insulating layer,
wherein the third conductive layer is electrically connected to the pixel electrode through a second contact hole in the second insulating layer,
wherein the second conductive layer has a stacked-layer structure,
wherein a thickness of the second conductive layer is smaller than a thickness of the fourth conductive layer, and
wherein an entire area of the second conductive layer overlapping with the semiconductor layer overlaps with the first conductive layer.
7. The display device according to claim 6 ,
wherein, in a plan view, the first conductive layer has a region intersecting with the fourth conductive layer.
8. The display device according to claim 6 ,
wherein the fourth conductive layer has a region overlapping with the first conductive layer through the second conductive layer and the semiconductor layer.
9. The display device according to claim 6 ,
wherein the second conductive layer has a single layer.
10. The display device according to claim 6 ,
wherein the pixel electrode comprises a slit.
11. A display device comprising:
a first pixel comprising a first transistor;
a second pixel comprising a second transistor, the second pixel adjacent to the first pixel,
wherein the display device comprises:
a first conductive layer having a function of a gate electrode of the first transistor;
a first insulating layer over the first conductive layer;
a semiconductor layer over the first insulating layer, the semiconductor layer having a channel formation region of the first transistor;
a second conductive layer over the semiconductor layer, the second conductive layer having a function of one of a source electrode and a drain electrode of the first transistor;
a third conductive layer over the semiconductor layer, the third conductive layer having a function of the other of the source electrode and the drain electrode of the first transistor;
a second insulating layer having a region in contact with a surface of the second conductive layer and a region in contact with a surface of the third conductive layer;
a fourth conductive layer over the second insulating layer, the fourth conductive layer electrically connected to the second conductive layer through a first contact hole in the second insulating layer; and
a pixel electrode over the second insulating layer, the pixel electrode electrically connected to the third conductive layer through a second contact hole in the second insulating layer,
wherein the fourth conductive layer is electrically connected to one of the source electrode and the drain electrode of the first transistor and one of a source electrode and a drain electrode of the second transistor,
wherein the fourth conductive layer has a stacked-layer structure,
wherein a thickness of the second conductive layer is smaller than a thickness of the fourth conductive layer, and
wherein an entire area of the second conductive layer overlapping with the semiconductor layer overlaps with the first conductive layer.
12. The display device according to claim 11 ,
wherein, in a plan view, the first conductive layer has a region intersecting with the fourth conductive layer.
13. The display device according to claim 11 ,
wherein the fourth conductive layer has a region overlapping with the first conductive layer through the second conductive layer and the semiconductor layer.
14. The display device according to claim 11 ,
wherein the second conductive layer has a single layer.
15. The display device according to claim 11 ,
wherein the pixel electrode comprises a slit.