Ring assembly, substrate support apparatus and plasma processing apparatus including the same

1. A substrate support apparatus, comprising:

a substrate stage configured to have a wafer seated thereon; and

a ring assembly configured to control plasma in an edge region of the wafer,

wherein the ring assembly comprising:

an outer insulating ring around an upper outer periphery of the substrate stage;

an edge ring around the substrate stage, and on the outer insulating ring; and

a shadow ring configured to move up and down within a predetermined stroke range above the outer insulating ring and the edge ring, the shadow ring configured to cover the edge region of the wafer while the wafer is seated on the substrate stage,

wherein an upper surface of the edge ring is located higher than an upper surface of the substrate stage by a predetermined height, and

wherein the shadow ring comprises:

a body portion comprising an annular shape; and

a recess in a bottom surface of the body portion, the recess configured to accommodate at least a portion of a protruding upper portion of the edge ring.

2. The substrate support apparatus of claim 1 , wherein the wafer is seated on the substrate stage, and a predetermined height of the upper surface of the edge ring, above an upper surface of the wafer, is within a range of 3 mm to 10 mm.

3. The substrate support apparatus of claim 1 , wherein the wafer is seated on the substrate stage, and a length of the edge region of the wafer covered by the shadow ring is within a range of 1 mm to 3 mm.

4. The substrate support apparatus of claim 1 , wherein the wafer is seated on the substrate stage, and a distance between the shadow ring and an upper surface of the wafer is within a range of 0.1 mm to 18 mm.

5. The substrate support apparatus of claim 1 , further comprising:

lift pins configured to move up and down within the substrate stage, and configured to contact and support at least two points of a lower surface of the shadow ring; and

a drive mechanism configured to independently drive the lift pins to adjust a vertical spacing between the wafer and the shadow ring.

6. The substrate support apparatus of claim 5 , wherein the drive mechanism comprises:

actuators configured to move the lift pins up and down, respectively; and

actuator drivers configured to drive the actuators according to input control signals, respectively.

7. The substrate support apparatus of claim 5 , wherein the lift pins comprise a first lift pin, a second lift pin, and a third lift pin that contact and support three points on the lower surface of the shadow ring, respectively.

8. The substrate support apparatus of claim 7 , wherein the drive mechanism is configured to adjust a vertical spacing of the shadow ring with respect to an upper surface of the wafer by adjusting heights of the first lift pin, the second lift pin, and the third lift pin.

9. The substrate support apparatus of claim 5 , further comprising:

a connection pin connected to an end portion of one of the lift pins and extending in a radial direction toward a center of the substrate stage; and

a drive pin extending from an end portion of the connection pin in a direction parallel with an extending direction of the one of the lift pins,

wherein the drive mechanism is configured to raise and lower the drive pin.

10. A substrate support apparatus, comprising:

a substrate stage configured to have a wafer seated thereon;

an outer insulating ring on an upper outer periphery of the substrate stage;

an edge ring on the outer insulating ring, around the substrate stage; and

a shadow ring above the outer insulating ring and the edge ring, the shadow ring configured to move up and down within a predetermined stroke range and to cover an edge region of the wafer while the wafer is seated on the substrate stage,

wherein an upper surface of the edge ring is located higher than an upper surface of the substrate stage by a predetermined height,

wherein the shadow ring comprises:

an annular body portion;

an inner end portion extending around an inner circumference of the annular body portion and extending toward a center of the shadow ring, such as to be configured to cover the edge region of the wafer;

an outer end portion extending around an outer circumference of the annular body portion; and

a recess in a bottom surface of the annular body portion, at least a portion of a protruding upper portion of the edge ring received in the recess, and

wherein the shadow ring is configured to move up and down such as to be spaced apart from the outer insulating ring and the edge ring by respective predetermined distances to form a flow path for gas flow between the shadow ring and the outer insulating ring and between the shadow ring and the edge ring.

11. The substrate support apparatus of claim 10 , wherein the wafer is seated on the substrate stage, and a length of the edge region of the wafer covered by the inner end portion is within a range of 1 mm to 3 mm.

12. The substrate support apparatus of claim 10 , wherein the shadow ring further includes a second recess that is provided in the bottom surface of the annular body portion, the second recess accommodating a protruding upper portion of the outer insulating ring.

13. The substrate support apparatus of claim 12 , wherein the second recess is arranged between the annular body portion and the outer end portion.

14. The substrate support apparatus of claim 10 , wherein a lower surface of the outer end portion is located on a plane that is the same as or lower than a plane on which the bottom surface of the annular body portion is located.

15. The substrate support apparatus of claim 10 , wherein an outer radius of the outer end portion of the shadow ring is equal to or greater than an outer diameter of the substrate stage.

16. The substrate support apparatus claim 10 , wherein the wafer is seated on the substrate stage, and a distance between the shadow ring and an upper surface of the wafer is within a range of 0.1 mm to 18 mm.

17. The substrate support apparatus of claim 10 , wherein the wafer is seated on the substrate stage, and a predetermined height of the upper surface of the edge ring, above an upper surface of the wafer, is within a range of 3 mm to 10 mm.

18. The substrate support apparatus of claim 10 , further comprising:

lift pins configured to be move up and down within the substrate stage, and configured to contact and support at least two points of a lower surface of the shadow ring; and

a drive mechanism configured to independently drive the lift pins to adjust a vertical spacing between the wafer and the shadow ring.

19. The substrate support apparatus of claim 18 , wherein the drive mechanism comprises:

actuators configured to move the lift pins up and down, respectively; and

actuator drivers configured to drive the actuators according to input control signals, respectively.

20. A substrate support apparatus, comprising:

a substrate stage disposed within a chamber that comprises a space for processing a wafer, the substrate stage configured to have the wafer seated thereon;

a substrate electrode in the substrate stage and to which a source power is applied;

an outer insulating ring around an upper outer periphery of the substrate stage;

an edge ring around the substrate stage and on the outer insulating ring; and

a shadow ring configured to move up and down within a predetermined stroke range above the outer insulating ring and the edge ring, the shadow ring configured to cover an edge region of the wafer while the wafer is seated on the substrate stage,

wherein an upper surface of the edge ring is located higher than an upper surface of the substrate stage by a predetermined height, and

wherein the shadow ring comprises:

a body portion comprising an annular shape; and

a recess in a bottom surface of the body portion, the recess accommodating at least a portion of a protruding upper portion of the edge ring.