Semiconductor device and method of manufacturing the same

1. A semiconductor device having a standard cell, the standard cell comprising:

a first gate-all-around field effect transistor (GAA FET) disposed over a substrate;

a second GAA FET disposed at a vertically different level from the first GAA FET and sharing a gate with the first GAA FET;

a first power supply line;

a second power supply line; and

a first signal line, a second signal line, a third signal line and a fourth signal line, which are disposed above the first GAA FET and the second GAA FET, wherein:

the first, second, third and fourth signal lines are located at a same level with each other,

the first power supply line and the second power supply line are located at vertically different levels from each other, and

a cell height of the standard cell is 4 T, where T is a pitch between the first and second signal lines, the second and third signal lines, and the third and fourth signal lines in plan view.

2. The semiconductor device of claim 1 , wherein the first and second power supply lines are located at different levels from the first, second and third signal lines.

3. The semiconductor device of claim 1 , wherein the first power supply line is located at a first cell boundary and the second power supply line is located at a second cell boundary, and the cell height is a horizontal distance between the first cell boundary and the second cell boundary.

4. The semiconductor device of claim 1 , wherein a width of the one of the first or second power supply lines is greater than a width of the first, second, third and fourth signal lines.

5. The semiconductor device of claim 1 , wherein the first and second power supply lines overlap with each other in plan view.

6. The semiconductor device of claim 1 , wherein:

the first GAA FET and the second GAA FET constitute an inverter,

one of the first, second, third and fourth signal lines is coupled to the gate as an input of the inverter, and

one of the first, second, third and fourth signal lines is coupled to a source or a gate of the first and second GAA FET as an output of the inverter.

7. The semiconductor device of claim 1 , wherein the fourth signal line is narrower than the first and second power supply lines.

8. A semiconductor device having a standard cell, the standard cell comprising:

a first gate-all-around field effect transistor (GAA FET) disposed over a substrate;

a second GAA FET disposed at a vertically different level from the first GAA FET and sharing a gate with the first GAA FET;

a first power supply line;

a second power supply line; and

a first signal line, a second signal line and a third signal line, which are disposed above the first GAA FET and the second GAA FET, wherein:

the first, second and third signal lines are located at a same level with each other,

the first power supply line and the second power supply line are located at vertically different levels from each other,

one of the first power supply line or the second power supply line is located at a same level as the first, second and third signal lines, and

the one of the first power supply line or the second power supply line, the first signal line, the second signal line and the third signal line are arranged with a constant pitch T, where T is the pitch between the first and second signal lines, and the second and third signal lines in plan view.

9. The semiconductor device of claim 8 , wherein the one of the first power supply line or the second power supply line has a same width as the first, second and third signal lines.

10. The semiconductor device of claim 9 , wherein a cell height of the standard cell is 3.5 T in plan view.

11. The semiconductor device of claim 9 , wherein a center of another of the first power supply line or the second power supply line is located at a same position as one of cell boundaries in plan view.

12. The semiconductor device of claim 9 , wherein a center of another of the first power supply line or the second power supply line and a center of the one of the first power supply line or the second power supply line are located at a same position as one of cell boundaries in plan view.

13. The semiconductor device of claim 8 , wherein the one of the first power supply line or the second power supply line has a greater width than the first, second and third signal lines.

14. The semiconductor device of claim 8 , wherein a cell height of the standard cell is 4 T.

15. The semiconductor device of claim 8 , wherein the first GAA FET and the second GAA FET constitute an inverter.

16. The semiconductor device of claim 8 , wherein another of the first power supply line or the second power supply line is located at level below the first GAA FET and the second GAA FET.

17. A semiconductor device having a standard cell, the standard cell comprising:

a first gate-all-around field effect transistor (GAA FET) disposed over a substrate;

a second GAA FET disposed at a vertically different level from the first GAA FET;

a first power supply line;

a second power supply line; and

a first signal line, a second signal line and a third signal line, which are disposed above the first GAA FET and the second GAA FET, wherein:

the first, second and third signal lines are located at a same level with each other,

the first power supply line and the second power supply line are located at vertically different levels from each other, and

the first and second power supply lines are located at different levels from the first, second and third signal lines.

18. The semiconductor device of claim 17 , wherein a cell height of the standard cell is 3 T, where T is a pitch between the first and second signal lines, the second and third signal lines in plan view.

19. The semiconductor device of claim 17 , wherein a cell height of the standard cell is 4 T, where T is a pitch between the first and second signal lines, the second and third signal lines in plan view.

20. The semiconductor device of claim 17 , wherein the first and second power supply lines overlap with each other in plan view.