Magnetic memory device with nonmagnetic layer having two additive elements

1. A magnetic memory device comprising a stacked structure comprising:

a first magnetic layer having a variable magnetization direction;

a second magnetic layer having a fixed magnetization direction; and

a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and containing magnesium (Mg) and oxygen (O),

wherein:

the nonmagnetic layer further contains a first additive element and a second additive element,

the first additive element is at least one element selected from sulfur (S), gallium (Ga), aluminum (Al), titanium (Ti), vanadium (V), hydrogen (H), fluorine (F), manganese (Mn), lithium (Li), nitrogen (N) and magnesium (Mg),

the second additive element is lithium (Li), and

the first and second additive elements form a charge compensation pair which is electrically neutral.

2. The device of claim 1 , wherein the first and second additive elements compensate at least one of a defect and a grain boundary in the nonmagnetic layer.

3. The device of claim 1 , wherein a ratio of the first additive element in the nonmagnetic layer is less than or equal to 5 atomic %, and a ratio of the second additive element in the nonmagnetic layer is less than or equal to 5 atomic %.

4. The device of claim 1 , wherein a ratio of the first additive element in the nonmagnetic layer is greater than or equal to 0.002 atomic %, and a ratio of the second additive element in the nonmagnetic layer is greater than or equal to 0.002 atomic %.

5. A magnetic memory device comprising a stacked structure comprising:

a first magnetic layer having a variable magnetization direction;

a second magnetic layer having a fixed magnetization direction; and

a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and containing magnesium (Mg) and oxygen (O),

wherein:

the nonmagnetic layer further contains a first additive element and a second additive element,

the first additive element is at least one element selected from sulfur (S), gallium (Ga), aluminum (Al), titanium (Ti), vanadium (V), hydrogen (H), fluorine (F), manganese (Mn), lithium (Li), nitrogen (N) and magnesium (Mg),

the second additive element is sulfur (S), and

the first and second additive elements form a charge compensation pair which is electrically neutral.

6. The device of claim 5 , wherein the first and second additive elements compensate at least one of a defect and a grain boundary in the nonmagnetic layer.

7. The device of claim 5 , wherein a ratio of the first additive element in the nonmagnetic layer is less than or equal to 5 atomic %, and a ratio of the second additive element in the nonmagnetic layer is less than or equal to 5 atomic %.

8. The device of claim 5 , wherein a ratio of the first additive element in the nonmagnetic layer is greater than or equal to 0.002 atomic %, and a ratio of the second additive element in the nonmagnetic layer is greater than or equal to 0.002 atomic %.

9. A magnetic memory device comprising a stacked structure comprising:

a first magnetic layer having a variable magnetization direction;

a second magnetic layer having a fixed magnetization direction; and

a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and containing magnesium (Mg) and oxygen (O),

wherein:

the nonmagnetic layer further contains a first additive element and a second additive element,

the first additive element is at least one element selected from sulfur (S), gallium (Ga), aluminum (Al), titanium (Ti), vanadium (V), hydrogen (H), fluorine (F), manganese (Mn), lithium (Li), nitrogen (N) and magnesium (Mg), and

the second additive element is nitrogen (N), and

the first and second additive elements form a charge compensation pair which is electrically neutral.

10. The device of claim 9 , wherein the first and second additive elements compensate at least one of a defect and a grain boundary in the nonmagnetic layer.

11. The device of claim 9 , wherein a ratio of the first additive element in the nonmagnetic layer is less than or equal to 5 atomic %, and a ratio of the second additive element in the nonmagnetic layer is less than or equal to 5 atomic %.

12. The device of claim 9 , wherein a ratio of the first additive element in the nonmagnetic layer is greater than or equal to 0.002 atomic %, and a ratio of the second additive element in the nonmagnetic layer is greater than or equal to 0.002 atomic %.

13. A magnetic memory device comprising a stacked structure comprising:

a first magnetic layer having a variable magnetization direction;

a second magnetic layer having a fixed magnetization direction; and

a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and containing magnesium (Mg) and oxygen (O),

wherein:

the nonmagnetic layer further contains a first additive element and a second additive element,

the first additive element is at least one element selected from sulfur (S), gallium (Ga), aluminum (Al), titanium (Ti), vanadium (V), hydrogen (H), fluorine (F), manganese (Mn), lithium (Li), nitrogen (N) and magnesium (Mg), and

the second additive element is fluorine (F), and

the first and second additive elements form a charge compensation pair which is electrically neutral.

14. The device of claim 13 , wherein the first and second additive elements compensate at least one of a defect and a grain boundary in the nonmagnetic layer.

15. The device of claim 13 , wherein a ratio of the first additive element in the nonmagnetic layer is less than or equal to 5 atomic %, and a ratio of the second additive element in the nonmagnetic layer is less than or equal to 5 atomic %.

16. The device of claim 13 , wherein a ratio of the first additive element in the nonmagnetic layer is greater than or equal to 0.002 atomic %, and a ratio of the second additive element in the nonmagnetic layer is greater than or equal to 0.002 atomic %.