Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
A method of depositing a layer on a substrate includes applying a first magnetic field to a cathode target, electrically coupling the cathode target to a first high power pulse resonance alternating current (AC) power supply, positioning an additional cylindrical cathode target electrode around the cathode, applying a second magnetic field to the additional cylindrical cathode target electrode, electrically coupling the additional cylindrical cathode target electrode to a second high power pulse resonance AC power supply, generating magnetic coupling between the cathode target and an anode, providing a feed gas, and selecting a time shift between negative voltage peaks associated with AC voltage waveforms generated by the first high power pulse resonance AC power supply and the second high power pulse resonance AC power supply. An apparatus includes a vacuum chamber, cathode target magnet assembly, first high power pulse resonance AC power supply, additional electrode, additional electrode magnet assembly, second high power pulse resonance AC power supply, and feed gas.
1. An electrically and magnetically enhanced ionized physical vapor deposition (I-PVD) method of sputtering a layer on a substrate using a magnetron, the method comprising:
positioning the magnetron in a vacuum with an anode, a cathode target, a magnet assembly, the substrate, and a feed gas;
applying a plurality of unipolar negative direct current (DC) voltage pulses from a pulse power supply to a pulse forming network (PFN), the PFN comprising at least one inductor and at least one capacitor;
adjusting at least one of an amplitude, pulse duration, and frequency associated with the plurality of unipolar negative DC voltage pulses and adjusting a value of at least one of the at least one inductor and the at least one capacitor, thereby causing a resonance mode associated with the PFN, the PFN converting the unipolar negative DC voltage pulses to an asymmetric alternating current (AC) signal that generates an asymmetric AC discharge on the magnetron with pulse current densities in a range of about 0.1 to 20 A/cm 2 , the asymmetric AC signal operatively coupled to the cathode target, the asymmetric AC signal comprising a first negative voltage and a first positive voltage followed by a second negative voltage, the second negative voltage generating plasma for use during a subsequent negative voltage associated with the asymmetric AC signal, thereby increasing ionization of sputtered target material on the substrate during sputtering.
2. The method, as defined by claim 1 , further comprising coupling a substrate bias voltage to a substrate holder, the substrate bias voltage comprising a range of −10 V to −2000 V.
3. The method, as defined by claim 1 , wherein the feed gas comprises a noble gas, the noble gas comprising at least one of argon, xenon, neon, or krypton.
4. The method, as defined by claim 1 , wherein the feed gas comprises a mixture of a noble gas and a reactive gas.
5. The method, as defined by claim 1 , wherein the feed gas comprises a mixture of a noble gas and a gas that comprises atoms associated with the cathode target.
6. The method, as defined by claim 1 , further comprising rotating the cathode target with a speed in a range of 10 to 100 revolutions per minute.
7. The method, as defined by claim 1 , wherein the PFN comprises at least one of selectable voltage, power, or frequency.
8. The method, as defined by claim 1 , wherein the cathode target comprises at least one of the following elements: B, C, Al, Si, P, S, Ga, Ge, As, Se, In, Sn, Sb, Te, I, Tl, Pb, Bi, Sc, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Be, Mg, Ca, Sr, or Ba.
9. The method, as defined by claim 1 , wherein the substrate comprises at least a portion of at least one of a bearing, a camshaft, a gear, a fuel injector, a cutting tool, a carbide insert, a drill bit, a broach, a reamer, a razor blade for surgical applications and hair removal, a hard drive, a solar panel, an optical filter, a flat panel display, a thin film battery, a battery for storage, a hydrogen fuel cell, a turbine blade, a jet engine part, jewelry, a plumbing part, a pipe, a tube, a medical implant, a medical stent, an artificial joint, a semiconductor wafer, a film used to manufacture an electronic memory device, or a diamond like coating hard mask.
10. The method, as defined by claim 1 , wherein the cathode target comprises at least one of a hollow shape, cylindrical shape, flat shape.
11. An electrically and magnetically enhanced ionized physical vapor deposition (I-PVD) sputtering apparatus that deposits a layer on a substrate using a magnetron, the apparatus comprising:
a magnetron, the magnetron positioned in a vacuum with an anode, a cathode target, a magnetic assembly, the substrate, and a feed gas;
a pulse forming network (PFN) receiving a plurality of unipolar negative direct current (DC) voltage pulses from a pulse power supply, the PFN comprising at least one inductor and at least one capacitor,
at least one of an amplitude, pulse duration, and frequency associated with the plurality of unipolar negative DC voltage pulses being adjusted and a value of at least one of the at least one inductor and the at least one capacitor being adjusted, thereby causing a resonance mode associated with the PFN, the PFN converting the unipolar negative DC voltage pulses to an asymmetric alternating current (AC) signal that generates an asymmetric AC discharge on the magnetron with pulse current densities in a range of about 0.1 to 20 A/cm 2 , the asymmetric AC signal operatively coupled to the cathode target, the asymmetric AC signal comprising a first negative voltage and a first positive voltage followed by a second negative voltage, the second negative voltage generating plasma for use during a subsequent negative voltage associated with the first asymmetric AC signal, thereby increasing ionization of sputtered target material on the substrate during sputtering.
12. The apparatus, as defined by claim 11 , further comprising a substrate bias power supply coupled to a substrate holder, the substrate bias power supply providing a bias voltage on the substrate in a range of −10 to −2000 V.
13. The apparatus, as defined by claim 11 , wherein the feed gas comprises a noble gas, the noble gas comprising at least one of argon, xenon, neon, or krypton.
14. The apparatus, as defined by claim 11 , wherein the feed gas comprises a mixture of a noble gas and a reactive gas.
15. The apparatus, as defined by claim 11 , wherein the feed gas comprises a mixture of a noble gas and a gas that comprises atoms associated with the cathode target.
16. The apparatus, as defined by claim 11 , wherein the cathode target rotates with a speed in a range of 10 to 100 revolutions per minute.
17. The apparatus, as defined by claim 11 , wherein the PFN comprises at least one of selectable voltage, power, or frequency.
18. The apparatus, as defined by claim 11 , wherein the cathode target comprises at least one of the following elements: B, C, Al, Si, P, S, Ga, Ge, As, Se, In, Sn, Sb, Te, I, Tl, Pb, Bi, Sc, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Be, Mg, Ca, Sr, or Ba.
19. The apparatus, as defined by claim 11 , wherein the substrate comprises at least a portion of at least one of a bearing, a camshaft, a gear, a fuel injector, a cutting tool, a carbide insert, a drill bit, a broach, a reamer, a razor blade for surgical applications and hair removal, a hard drive, a solar panel, an optical filter, a flat panel display, a thin film battery, a battery for storage, a hydrogen fuel cell, a turbine blade, a jet engine part, jewelry, a plumbing part, a pipe, a tube, a medical implant, a medical stent, an artificial joint, a semiconductor wafer, a film used to manufacture an electronic memory device, or a diamond like coating hard mask.
20. The apparatus, as defined by claim 11 , wherein the cathode target comprises at least one of a hollow shape, cylindrical shape, flat shape.