Cleaning method and film deposition apparatus

1. A cleaning method of cleaning an inside of a processing chamber in a film deposition apparatus, the film deposition apparatus including a rotary table rotatably provided in the processing chamber and a gas injector provided to pass through a side wall of the processing chamber, a plurality of mounting areas being provided on the rotary table in a circumferential direction, a wafer being mounted on each of the plurality of mounting areas, the gas injector having an opening at a front end of the gas injector, the front end of the gas injector is located toward the side wall of the processing chamber relative to an outer periphery of a rotational trajectory of the plurality of mounting areas in plan view, and the cleaning method comprising:

(a) discharging a carrier gas and a cleaning gas from the opening of the gas injector toward a center of the processing chamber horizontally with rotating the rotary table, a flow rate of the carrier gas being adjusted to a first flow rate;

(b) discharging the carrier gas and the cleaning gas from the opening of the gas injector toward the center of the processing chamber horizontally with rotating the rotary table, the flow rate of the carrier gas being adjusted to a second flow rate that is less than the first flow rate; and

(c) performing switching from (a) to (b) and switching from (b) to (a) a predetermined number of times while the rotary table rotates by one revolution, the predetermined number being equal to a number of the plurality of mounting areas,

wherein (a) is performed at least upon determining that the plurality of mounting areas are not located on a line section connecting the gas injector and a center of the rotary table in plan view,

wherein (b) is performed at least upon determining that a center of a first mounting area among the plurality of mounting areas is located on the line section connecting the gas injector and the center of the rotary table in plan view,

wherein the cleaning gas and the carrier gas reach the center of the rotary table at the first flow rate, and

wherein an amount of the cleaning gas and the carrier gas supplied to a peripheral edge side area on the rotary table is greater than an amount of the cleaning gas and the carrier gas supplied to a center side area on the rotary table at the second flow rate.

2. The cleaning method as claimed in claim 1 , wherein (c) includes performing the switching from (a) to (b) and the switching from (b) to (a) based on a rotation angle of the rotary table.

3. The cleaning method as claimed in claim 1 , wherein a flow rate of the cleaning gas discharged in (b) is equal to a flow rate of the cleaning gas discharged in (a).

4. The cleaning method as claimed in claim 1 , wherein a rotational speed of the rotary table in (b) is greater than a rotational speed of the rotary table in (a).

5. The cleaning method as claimed in claim 1 , wherein the cleaning gas is a nitrogen trifluoride gas, and is activated by remote plasma and discharged.

6. The cleaning method as claimed in claim 1 , wherein the plurality of mounting areas are recesses recessed with respect to an upper surface of the rotary table.

7. A film deposition apparatus comprising:

a controller,

wherein the controller is configured to perform a cleaning method of cleaning an inside of a processing chamber in the film deposition apparatus, the film deposition apparatus including a rotary table rotatably provided in the processing chamber and a gas injector provided to pass through a side wall of the processing chamber, a plurality of mounting areas being provided on the rotary table in a circumferential direction, a wafer being mounted on each of the plurality of mounting areas, the gas injector having an opening at a front end of the gas injector, the front end of the gas injector is located toward the side wall of the processing chamber relative to an outer periphery of a rotational trajectory of the plurality of mounting areas in plan view, and the cleaning method comprising (a) discharging a carrier gas and a cleaning gas from the opening of the gas injector toward a center of the processing chamber horizontally with rotating the rotary table, a flow rate of the carrier gas being adjusted to a first flow rate; (b) discharging the carrier gas and the cleaning gas from the opening of the gas injector toward the center of the processing chamber horizontally with rotating the rotary table, the flow rate of the carrier gas being adjusted to a second flow rate that is less than the first flow rate; and (c) performing switching from (a) to (b) and switching from (b) to (a) a predetermined number of times while the rotary table rotates by one revolution, the predetermined number being equal to a number of the plurality of mounting areas, wherein (a) is performed at least upon determining that the plurality of mounting areas are not located on a line section connecting the gas injector and a center of the rotary table in plan view, wherein (b) is performed at least upon determining that a center of a first mounting area among the plurality of mounting areas is located on the line section connecting the gas injector and the center of the rotary table in plan view, wherein the cleaning gas and the carrier gas reach the center of the rotary table at the first flow rate, and wherein an amount of the cleaning gas and the carrier gas supplied to a peripheral edge side area on the rotary table is greater than an amount of the cleaning gas and the carrier gas supplied to a center side area on the rotary table at the second flow rate.