IP Library › Granted Patent US 12,078,886
Granted Patent B2
US 12,078,886 · App. 18/332,682 · Granted Sep 3, 2024

Display apparatus and backlight unit thereof

Inventor: Eun Ju Kim (Ansan-si, KR)
Assignee: Seoul Semiconductor Co., Ltd.
G02F1/133606G02B6/0016G02B6/0021G02B6/003G02B6/0036G02B6/0055G02B6/0073G02B6/0083G02F1/133605G02F1/133608G02F1/133611H01L25/0753G02B6/0043G02B6/0068G02F1/133603G02F1/133607G02F1/133614H01L25/0756H01L33/46H01L33/502H01L33/507H01L33/54H01L33/60H01L33/62H01L2933/0091
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Quick Facts
Patent No.
US 12,078,886
App. No.
18/332,682
Granted
Sep 3, 2024
Kind
B2
Abstract

A display apparatus including a frame, light emitting diode chips separated from each other and regularly arranged in a matrix on the frame, an optical part including a display panel and at least one of a phosphor sheet and an optical sheet, a light guide plate disposed between the frame and the optical part to cover the light emitting diode chips, at least one reflector disposed between the frame and the light guide plate to reflect at least part of light emitted from the light emitting diode chip to direct at least part of light emitted therefrom to the light guide plate, and a first-type electrode and a second-type electrode, in which at least one of the light emitting diode chips is a flip-chip type and includes a first-type semiconductor layer electrically connected to the first-type electrode and a second-type semiconductor layer electrically connected to the second-type electrode.

Claims (47)

1. A backlight module comprising:

a frame;

a substrate disposed on the frame;

a light emitting diode disposed on the substrate and including an upper region, a lower region facing the substrate, and a side region disposed between the upper region and the lower region;

an optical part disposed over the upper region of the light emitting diode and including at least one of a wavelength conversion sheet or an optical sheet;

a light guider disposed between the frame and the optical part to cover the upper region of the light emitting diode;

a reflector disposed between the frame and the light guider, the reflector being configured to reflect at least a part of a light emitted from the light emitting diode to direct at least the part of the light to the light guider; and

a first-type electrode and a second type electrode,

wherein the light emitting diode includes a first-type semiconductor layer electrically connected to the first-type electrode and a second-type semiconductor layer electrically connected to the second-type electrode,

wherein the light guider includes a light exit that has a grooved region, and

wherein the grooved region of the light exit covers an upper surface of the light emitting diode.

2. The backlight module according to claim 1 , wherein the reflector has a transmittance of 0% to 80% with respect to the light emitted from the light emitting diode.

3. The backlight module according to claim 1 , further comprising a molding covering the upper surface and a side surface of the light emitting diode.

4. The backlight module according to claim 3 , wherein the molding includes phosphor.

5. The backlight module according to claim 3 , wherein the molding has a non-covering region of the first-type electrode and the second-type electrode.

6. The backlight module according to claim 3 , wherein a width of the molding from the side surface of the light emitting diode to a side surface of the molding has a thickness that is 1.5 to 4 times of a thickness of the molding from an upper surface of the reflector to an upper surface of the molding.

7. The backlight module according to claim 1 , wherein the wavelength conversion sheet includes at least one quantum dot.

8. A backlight module comprising;

a frame;

a substrate disposed on the frame;

light emitting diode chips arranged on the substrate, each of the light emitting diode chips including an upper region, a lower region facing the substrate, and a side region disposed between the upper region and the lower region;

an optical part disposed over the light emitting diode chips and including at least one of a wavelength conversion sheet or an optical sheet;

a light guider disposed between the frame and the optical part to cover the upper region of at least one of the light emitting diode chips;

a reflector disposed between the frame and the light guider, the reflector being configured to reflect at least a part of a light emitted from each of the light emitting diode chips to direct at least the part of the light to the light guider; and

reflection structures disposed between the light guider and the frame and separated from each of the light emitting diode chips,

wherein the light emitting diode chips are arranged in a matrix and are separated from each other, and

wherein the reflector has a transmittance of 0% to 80% with respect to the light emitted from the light emitting diode chips.

9. The backlight module according to claim 8 , further comprising a molding covering an upper surface and a side surface of each of the light emitting diode chips.

10. The backlight module according to claim 9 , wherein the molding includes phosphor.

11. The backlight module according to claim 9 , wherein the width of the molding from the side surface of at least one of the light emitting diode chips to a side surface of the molding has a thickness that is 1.5 to 4 times of a thickness of the molding from an upper surface of the reflector to an upper surface of the molding.

12. The backlight module according to claim 9 , wherein the molding includes a transparent material.

13. The backlight module according to claim 8 , wherein the wavelength conversion sheet includes at least one quantum dot.

14. A display device comprising:

a frame;

a substrate disposed on the frame;

a display panel disposed on the frame;

light emitting diode chips arranged on the substrate, each of the light emitting diode chips including an upper region, a lower region facing the substrate, and a side region disposed between the upper region and the lower region;

an optical part disposed over the light emitting diode chips and including at least one of a wavelength conversion sheet or an optical sheet;

a light guider disposed between the frame and the optical part to cover the upper region of at least one of the light emitting diode chips;

a reflector disposed between the frame and the light guider, the reflector being configured to reflect at least a part of a light emitted from each of the light emitting diode chips to direct at least the part of the light to the light guider; and

reflection structures disposed between the light guider and the frame and separated from each of the light emitting diode chips,

wherein the light emitting diode chips are arranged in a matrix and are separated from each other, and

wherein the reflector has a transmittance of 0% to 80% with respect to the light emitted from the light emitting diode chips.

15. The backlight module according to claim 14 , further comprising a molding covering an upper surface and a side surface of each of the light emitting diode chips.

16. The backlight module according to claim 15 , wherein the molding includes phosphor and a light diffuser.

17. The backlight module according to claim 15 , wherein the molding includes a transparent material.

18. The backlight module according to claim 14 , wherein the wavelength conversion sheet contains at least one quantum dot.

Continuity (7)
Continuation 17715918 · Apr 7, 2022
Continuation 17008662 · Sep 1, 2020
Continuation 15809259 · Nov 10, 2017
Provisional Application 62436553 · Dec 20, 2016
Provisional Application 62422157 · Nov 15, 2016
Provisional Application 62421454 · Nov 14, 2016
Related Publication 20230324736A1 · Oct 12, 2023
Cited By (1)
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