Display apparatus and backlight unit thereof
A display apparatus including a frame, light emitting diode chips separated from each other and regularly arranged in a matrix on the frame, an optical part including a display panel and at least one of a phosphor sheet and an optical sheet, a light guide plate disposed between the frame and the optical part to cover the light emitting diode chips, at least one reflector disposed between the frame and the light guide plate to reflect at least part of light emitted from the light emitting diode chip to direct at least part of light emitted therefrom to the light guide plate, and a first-type electrode and a second-type electrode, in which at least one of the light emitting diode chips is a flip-chip type and includes a first-type semiconductor layer electrically connected to the first-type electrode and a second-type semiconductor layer electrically connected to the second-type electrode.
1. A light emitting device comprising:
a frame;
a substrate disposed on the frame;
a light emitter disposed on the substrate and including an upper surface, a lower surface facing the substrate, and a side surface disposed between the upper surface and the lower surface;
an optical layer disposed over the upper surface of the light emitter and including at least one of a wavelength conversion layer or an optical sheet;
a light guider disposed between the frame and the optical layer to cover at least a region of the light emitter;
a reflector disposed between the frame and the light guider, the reflector being configured to reflect at least a part of a light emitted from the light emitter to direct at least the part of the light to the light guider;
a molding layer disposed between the frame and the light guider to cover the upper surface of the light emitter; and
a first-type electrode and a second type electrode,
wherein the light emitter includes a first-type semiconductor layer electrically connected to the first-type electrode and a second-type semiconductor layer electrically connected to the second-type electrode,
wherein the molding layer includes a first region having a first width from the side surface of the light emitter to a side surface of the molding layer and a second region having a first thickness from the upper surface of the light emitter to an upper surface of the molding layer, and
wherein the first width of the molding layer is greater than the first thickness of the molding layer.
2. The light emitting device of claim 1 , wherein the light guider includes a region having a roughened surface.
3. The light emitting device of claim 1 , wherein the molding layer contacts at least a region of a surface of the reflector.
4. The light emitting device of claim 3 , wherein the molding layer contacts the upper surface and the side surface of the light emitter.
5. The light emitting device of claim 1 , wherein the molding layer includes a non-covering region of the first-type electrode and the second-type electrode.
6. The light emitting device of claim 1 , wherein the first width of the molding layer is 1.5 times to 4 times of the first thickness of the molding layer.
7. The light emitting device of claim 1 , wherein the reflector has a transmittance of 0% to 80% with respect to the light emitted from the light emitter.
8. The light emitting device of claim 1 , wherein the molding layer includes a wavelength conversion material.
9. A light emitting device comprising:
a frame;
a substrate disposed on the frame;
a light emitter disposed on the substrate and including an upper surface, a lower surface facing the substrate, and a side surface disposed between the upper surface and the lower surface;
an optical layer disposed over the upper surface of the light emitter and including at least one of a wavelength conversion layer or an optical sheet;
a light guider disposed between the frame and the optical layer to cover at least a region of the light emitter;
a reflector disposed between the frame and the light guider;
a molding layer disposed between the frame and the light guider to cover the upper surface of the light emitter; and
a first-type electrode and a second type electrode,
wherein the light emitter includes a first-type semiconductor layer electrically connected to the first-type electrode and a second-type semiconductor layer electrically connected to the second-type electrode,
wherein the molding layer contacts at least a region of the reflector, and
wherein the light guider includes a region having a roughened surface.
10. The light emitting device of claim 9 , wherein the molding layer includes a first region having a first width from the side surface of the light emitter to a side surface of the molding layer and a second region having a first thickness from the upper surface of the light emitter to an upper surface of the molding layer.
11. The light emitting device of claim 10 , wherein the first width of the molding layer is greater than the first thickness of the molding layer.
12. The light emitting device of claim 11 , wherein the first width of the molding layer is 1.5 times to 4 times of the first thickness of the molding layer.
13. The light emitting device of claim 9 , wherein the molding layer includes a non-covering region of the first-type electrode and the second-type electrode.
14. The light emitting device of claim 9 , wherein the molding layer contacts the upper surface and the side surface of the light emitter.
15. A light emitting device comprising:
a substrate;
a light emitter disposed on the substrate and including an upper surface, a lower surface facing the substrate, and a side surface disposed between the upper surface and the lower surface;
an optical layer disposed over the substrate and including at least one of a wavelength conversion layer or an optical sheet;
a light guider disposed between the substrate and the optical layer;
a reflector disposed between the substrate and the light guider, the reflector being configured to reflect at least a part of a light emitted from the light emitter to direct at least the part of the light to the light guider;
a molding layer disposed between the substrate and the light guider to cover the upper surface of the light emitter; and
a first-type electrode and a second type electrode,
wherein the light emitter includes a first-type semiconductor layer electrically connected to the first-type electrode and a second-type semiconductor layer electrically connected to the second-type electrode,
wherein the molding layer includes a first region having a first width from the side surface of the light emitter to a side surface of the molding layer and a second region having a first thickness from the upper surface of the light emitter to an upper surface of the molding layer, and
wherein the first width is greater than the first thickness.
16. The light emitting device of claim 15 , wherein the light guider includes a region having a roughened surface.
17. The light emitting device of claim 15 , wherein the molding layer includes a non-covering region of the first-type electrode and the second-type electrode.
18. The light emitting device of claim 15 , wherein the first width of the molding layer is 1.5 times to 4 times of the first thickness of the molding layer.
19. The light emitting device of claim 15 , wherein the molding layer contacts the upper surface and the side surface of the light emitter.
20. The light emitting device of claim 15 , wherein the reflector has a transmittance of 0% to 80% with respect to the light emitted from the light emitter.