IP Library › Granted Patent US 12,085,843
Granted Patent B2
US 12,085,843 · App. 18/226,151 · Granted Sep 10, 2024

Method of manufacturing EUV photo masks

Inventors: Hsin-Chang Lee (Hsinchu, TW); Pei-Cheng Hsu (Hsinchu, TW); Ta-Cheng Lien (Hsinchu, TW); Tzu Yi Wang (Hsinchu, TW)
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
G03F1/22G03F1/80H01J37/32009H01J2237/334
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Quick Facts
Patent No.
US 12,085,843
App. No.
18/226,151
Granted
Sep 10, 2024
Kind
B2
Abstract

In a method of manufacturing a photo mask, an etching mask layer having circuit patterns is formed over a target layer of the photo mask to be etched. The photo mask includes a backside conductive layer. The target layer is etched by plasma etching, while preventing active species of plasma from attacking the backside conductive layer.

Claims (37)

1. A method of manufacturing a photo mask, the method comprising:

forming an etching mask layer having patterns over a target layer of the photo mask to be etched;

covering an edge portion of the photo mask with a frame shaped etching hard cover having an opening; and

etching the target layer by plasma etching through the opening.

2. The method of claim 1 , wherein during the etching comprises preventing active species of plasma from attacking a backside of the photo mask.

3. The method of claim 1 , wherein the frame shaped cover layer is distanced from the etching mask layer.

4. The method of claim 1 , wherein the frame shaped cover layer is in contact with the etching mask layer.

5. The method of claim 1 , wherein the frame shaped cover layer is in contact with the target layer to be etched.

6. The method of claim 1 , wherein:

the etching mask layer is a resist pattern, and

the target layer is a hard mask layer on an absorber layer of the photo mask.

7. The method of claim 1 , wherein:

the etching mask pattern is a hard mask pattern, and

the target layer is an absorber layer of the photo mask.

8. The method of claim 1 , wherein:

the etching mask layer is a resist pattern, and

the target layer includes an absorber layer, a capping layer and a reflective multilayer disposed over a substrate of the photo mask.

9. A method of manufacturing a photo mask, comprising:

forming a circuit pattern in an absorber layer of a mask blank, the mask blank including a substrate, a reflective multilayer on the substrate, a capping layer on the reflective multilayer and an absorber layer;

forming an etching mask layer having a black border pattern over the absorber layer;

covering an edge portion of the absorber layer with an etching hard cover having an opening, the opening having a rectangular shape; and

etching the absorber layer, the capping layer and the reflective multilayer by plasma etching through the opening, while preventing active species of plasma from attacking a backside of the mask blank.

10. The method of claim 9 , wherein the cover layer is separated from the etching mask layer.

11. The method of claim 9 , wherein the cover layer is in contact with the etching mask layer.

12. The method of claim 9 , wherein the etching hard cover is made of ceramic.

13. The method of claim 12 , wherein the etching hard cover has a frame shape having the opening and a frame portion defining the opening and a side frame from which the frame portion extends.

14. An etching apparatus for patterning a reflective photo mask, comprising:

a mask stage; and

an electric chuck to hold the reflective photo mask, wherein:

the electric chuck including a cathode and the mask stage includes a capture ring surrounding the electric chuck, and

a cathode protrusion is provided on the cathode.

15. The etching apparatus of claim 14 , wherein a stage protrusion is provided at a flat surface of the capture ring of the mask stage.

16. The etching apparatus of claim 14 , wherein the stage protrusion is an O-ring disposed in a groove formed in the capture ring.

17. The etching apparatus of claim 14 , wherein the stage protrusion is a protruding part of the capturing ring.

18. The etching apparatus of claim 14 , wherein the electric chuck is configured to move up and down relative to the capture ring.

19. The etching apparatus of claim 14 , wherein the stage protrusion is configured to contact a part of a substrate of the reflective photo mask where no conductive layer is formed.

20. The etching apparatus of claim 14 , wherein the capture ring is configured such that when the reflective photo mask is placed on the mask stage, a top of the capture ring is located above a top of the reflective photo mask.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 26, 2023
From: LEE, HSIN-CHANG; HSU, PEI-CHENG; LIEN, TA-CHENG; WANG, TZU YI
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 065381/0128 →
Continuity (4)
Continuation 17461520 · Aug 30, 2021
Continuation 16383535 · Apr 12, 2019
Provisional Application 62738709 · Sep 28, 2018
Related Publication 20230367193A1 · Nov 16, 2023
Cited By (1)
US 12,656,671