Semiconductor device
Provided is a semiconductor device that has a plurality of gate trench portions electrically connected to a gate electrode, and a plurality of dummy trench portions electrically connected to an emitter electrode, and includes a first trench group that includes one gate trench portion and two dummy trench portions adjacent to the gate trench portion and adjacent to each other, and a second trench group that includes two gate trench portions adjacent to each other.
1. A semiconductor device that has a plurality of gate trench portions electrically connected to a gate electrode, and a plurality of dummy trench portions electrically connected to an emitter electrode, the plurality of gate trench portions comprising:
a first trench group that includes only one gate trench portion not adjacent any other gate trench portion, and two dummy trench portions which are provided adjacent to the only one gate trench portion and adjacent to each other; and
a second trench group that includes two gate trench portions adjacent to each other among the plurality of gate trench portions, wherein
the first trench group and the second trench group repeat in the semiconductor device according to a preset ratio.
2. The semiconductor device according to claim 1 , wherein the second trench group further includes
three or more dummy trench portions which are continuously adjacent among the plurality of dummy trench portions.
3. The semiconductor device according to claim 2 , wherein the second trench group further includes
four dummy trench portions which are continuously adjacent among the plurality of dummy trench portions, and
wherein the two gate trench portions and the four dummy trench portions are adjacent.
4. The semiconductor device according to claim 3 ,
wherein the preset ratio between the number of the plurality of first trench groups and the number of the plurality of second trench groups is 1:1.
5. The semiconductor device according to claim 2 ,
wherein the first trench group and the second trench group are adjacent to each other.
6. The semiconductor device according to claim 2 ,
wherein the preset ratio between the number of the plurality of first trench groups and the number of the plurality of second trench groups is 1:1.
7. The semiconductor device according to claim 2 , comprising:
an emitter region of a first conductivity type;
a base region of a second conductivity type which has a polarity different from the first conductivity type;
a drift region of the first conductivity type which is provided below the base region and has a doping concentration lower than the emitter region; and
an accumulation region of the first conductivity type which is provided between the base region and the drift region, and has a doping concentration higher than the drift region.
8. The semiconductor device according to claim 2 , comprising:
a mesa portion that is sandwiched by at least two of the plurality of gate trench portions and the plurality of dummy trench portions, the mesa portion including
an emitter region of a first conductivity type, and
a base region of a second conductivity type which has a polarity different from the first conductivity type,
wherein the base region and the emitter region are alternately arranged in a stretching direction of a gate trench portion of a dummy trench portion in contact with the mesa portion.
9. The semiconductor device according to claim 2 , comprising:
a mesa portion that is sandwiched by at least two of the plurality of gate trench portions and the plurality of dummy trench portions, the mesa portion including
an emitter region of a first conductivity type, and
a base region of a second conductivity type which has a polarity different from the first conductivity type,
wherein the emitter region includes two emitter regions, and the two emitter regions stretch in contact with a gate trench portion or a dummy trench portion which is in contact with the mesa portion, and sandwich the base region.
10. The semiconductor device according to claim 1 , wherein the second trench group further includes
four dummy trench portions which are continuously adjacent among the plurality of dummy trench portions, and
wherein the two gate trench portions and the four dummy trench portions are adjacent.
11. The semiconductor device according to claim 10 ,
wherein the first trench group and the second group trench group are adjacent to each other.
12. The semiconductor device according to claim 10 ,
wherein the preset ratio between the number of the plurality of first trench groups and the number of the plurality of second trench groups is 1:1.
13. The semiconductor device according to claim 10 , comprising:
an emitter region of a first conductivity type;
a base region of a second conductivity type which has a polarity different from the first conductivity type;
a drift region of the first conductivity type which is provided below the base region, and has a doping concentration lower than the emitter region; and
an accumulation region of the first conductivity type which is provided between the base region and the drift region, and has a doping concentration higher than the drift region.
14. The semiconductor device according to claim 10 , comprising:
a mesa portion that is sandwiched by at least two of the plurality of gate trench portions and the plurality of dummy trench portions, the mesa portion including
an emitter region of a first conductivity type, and
a base region of a second conductivity type which has a polarity different from the first conductivity type,
wherein the base region and the emitter region are alternately arranged in a stretching direction of a gate trench portion or a dummy trench portion in contact with the mesa portion.
15. The semiconductor device according to claim 10 , comprising:
a mesa portion that is sandwiched by at least two of the plurality of gate trench portions and the plurality of dummy trench portions, the mesa portion including
an emitter region of a first conductivity type, and
a base region of a second conductivity type which has a polarity different from the first conductivity type,
wherein the emitter region includes two emitter regions, and the two emitter regions stretch in contact with a gate trench portion or a dummy trench portion which is in contact with the mesa portion, and sandwich the base region.
16. The semiconductor device according to claim 1 ,
wherein the first trench group and the second trench group are adjacent to each other.
17. The semiconductor device according to claim 1 ,
wherein the preset ratio between a number of the plurality of first trench groups and a number of the plurality of second trench groups is 1:1.
18. The semiconductor device according to claim 1 , comprising:
an emitter region of a first conductivity type;
a base region of a second conductivity type which has a polarity different from the first conductivity type;
a drift region of the first conductivity type which is provided below the base region, and has a doping concentration lower than the emitter region; and
an accumulation region of the first conductivity type which is provided between the base region and the drift region, and has a doping concentration higher than the drift region.
19. The semiconductor device according to claim 1 , comprising:
a mesa portion that is sandwiched by at least two of the plurality of gate trench portions and the plurality of dummy trench portions, the mesa portion including
an emitter region of a first conductivity type, and
a base region of a second conductivity type which has a polarity different from the first conductivity type,
wherein the base region and the emitter region are alternately arranged in a stretching direction of a gate trench portion or a dummy trench portion in contact with the mesa portion.
20. The semiconductor device according to claim 1 , comprising:
a mesa portion that is sandwiched by at least two of the plurality of gate trench portions and the plurality of dummy trench portions, the mesa portion including
an emitter region of a first conductivity type, and
a base region of a second conductivity type which has a polarity different from the first conductivity type,
wherein the emitter region includes two emitter regions, and the two emitter regions stretch in contact with a gate trench portion or a dummy trench portion which is in contact with the mesa portion, and sandwich the base region.