Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet
Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.
1. A method for epitaxially depositing a material on a substrate, comprising:
positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, wherein the process volume comprises an upper chamber region and a lower chamber region, and wherein the substrate support surface is in the upper chamber region and a lower surface of the susceptor is in the lower chamber region during an epitaxy process;
flowing a process gas comprising a chemical precursor from an upper gas inlet on a first side of the chamber body, across the substrate, and to a plurality of upper gas outlets on a second side of the chamber body during the epitaxy process, wherein each upper gas outlet of the plurality of gas outlets is fluidly coupled to an exhaust module via an upper chamber exhaust passage disposed between a first exhaust angle of about 5 degrees to about 45 degrees with respect to a vertically oriented plane and a second exhaust angle of about 30 degrees to about 70 degrees with respect to the vertically oriented plane, wherein the upper chamber exhaust passage has a width of about 10 mm to about 220 mm, and wherein the upper chamber exhaust passage is fluidly coupled to a first pump source configured to maintain an upper chamber pressure of about 1 Torr to about 760 Torr;
flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body during the epitaxy process, wherein the lower gas outlet is fluidly coupled to a second pump source via a lower chamber exhaust passage, wherein the second pump source is configured to maintain a lower chamber pressure of about 1 Torr to about 760 Torr, and wherein the lower chamber pressure is different than the upper chamber pressure, wherein the vertically oriented plane extends collinearly along a major axis of the lower chamber exhaust passage; and
maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region during the epitaxy process.
2. The method of claim 1 , wherein the pressure of the lower chamber region is maintained about 0.5% to about 10% greater than the pressure of the upper chamber region.
3. The method of claim 2 , wherein the pressure of the lower chamber region is maintained about 1% to about 5% greater than the pressure of the upper chamber region.
4. The method of claim 2 , further comprising independently maintaining each of the pressures of the lower chamber region and the upper chamber region at about 5 Torr to about 25 Torr.
5. The method of claim 1 , wherein the pressure of the lower chamber region is maintained greater than the pressure of the upper chamber region by increasing an exhaust rate of the process gas through the upper gas outlet.
6. The method of claim 1 , wherein the pressure of the lower chamber region is maintained greater than the pressure of the upper chamber region by decreasing an exhaust rate of the purge gas through the lower gas outlet.
7. The method of claim 1 , wherein the pressure of the lower chamber region is maintained greater than the pressure of the upper chamber region by increasing a flow rate of the purge gas through the lower gas inlet.
8. The method of claim 1 , wherein the purge gas comprises nitrogen gas (N 2 ), argon, helium, hydrogen, or any combination thereof, and wherein the chemical precursor comprises silane, disilane, trisilane, chlorosilane, dichlorosilane, tetrachlorosilane, hexachlorodisilane, or any combination thereof.
9. The method of claim 1 , wherein a gap is disposed peripherally and radially around the susceptor, wherein the gap is disposed between the susceptor and an inner surface of the chamber body, and wherein the upper chamber region and the lower chamber region are in fluid communication with each other through the gap.
10. The method of claim 1 , wherein maintaining the pressure comprises operating a control unit.
11. The method of claim 10 , wherein the control unit is configured to operate a flow control device.
12. The method of claim 11 , wherein the flow control device controls a flow rate of the upper gas inlet.
13. The method of claim 11 , wherein the flow control device controls a flow rate of the upper gas outlet.
14. The method of claim 11 , wherein the flow control device controls a flow rate of the upper chamber exhaust passage.
15. The method of claim 11 , wherein the flow control device controls a flow rate of the exhaust module.
16. The method of claim 11 , wherein the flow control device comprises a flow restrictor.
17. The method of claim 11 , wherein the flow control device comprises a valve.
18. A method for epitaxially depositing a material on a substrate, comprising:
positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, wherein the process volume comprises an upper chamber region and a lower chamber region, and wherein the substrate support surface is in the upper chamber region and a lower surface of the susceptor is in the lower chamber region during an epitaxy process;
flowing a process gas comprising a chemical precursor from an upper gas inlet on a first side of the chamber body, across the substrate, and to a plurality of upper gas outlets on a second side of the chamber body during the epitaxy process, wherein each upper gas outlet of the plurality of gas outlets is fluidly coupled to an exhaust module via an upper chamber exhaust passage disposed between a first exhaust angle of about 5 degrees to about 45 degrees with respect to a vertically oriented plane and a second exhaust angle of about 30 degrees to about 70 degrees with respect to the vertically oriented plane, wherein the upper chamber exhaust passage has a width of about 10 mm to about 220 mm, and wherein the upper chamber exhaust passage is fluidly coupled to a first pump source configured to maintain an upper chamber pressure of about 1 Torr to about 760 Torr;
flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body during the epitaxy process, wherein the lower gas outlet is fluidly coupled to a second pump source via a lower chamber exhaust passage, wherein the second pump source is configured to maintain a lower chamber pressure of about 1 Torr to about 760 Torr, and wherein the lower chamber pressure is different than the upper chamber pressure, wherein the vertically oriented plane extends collinearly along a major axis of the lower chamber exhaust passage; and
maintaining a pressure of the lower chamber region at about 1% to about 5% greater than a pressure of the upper chamber region during the epitaxy process by one or more of:
increasing an exhaust rate of the process gas through the upper gas outlet;
decreasing an exhaust rate of the purge gas through the lower gas outlet; or
increasing a flow rate of the purge gas through the lower gas inlet.