IP Library › Granted Patent US 12,094,687
Granted Patent B2
US 12,094,687 · App. 17/464,816 · Granted Sep 17, 2024

Plasma processing apparatus and plasma processing method

Inventors: Masayuki Shiina (Tokyo, JP); Naoki Yasui (Tokyo, JP); Tetsuo Ono (Tokyo, JP)
Assignee: HITACHI HIGH-TECH CORPORATION
H01J37/32165H01J37/32082H01J37/32091H01J37/32137H01J37/32146H01J37/32174H01J37/32192H01J37/32311H01J37/3244H01L21/2633H01L21/31155H01L21/32136H01L21/32137H01L21/67069H01L29/66795
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,094,687
App. No.
17/464,816
Granted
Sep 17, 2024
Kind
B2
Abstract

The plasma processing apparatus has a plasma processing chamber where plasma processing of the sample is performed, and plasma power supply that supplies radio frequency electric power for generating plasma. The radio frequency electric power is time modulated by a pulse wave having a first period and a second period that are repeated periodically. The pulse wave of the first period has first amplitude and the pulse wave of the second period has second amplitude which is a limited value smaller than the first amplitude. The extinction of the plasma, which is generated during the first period having the first amplitude, is maintained during the second period having the second amplitude with a predetermined dissociation.

Claims (42)

1. A plasma processing method comprising the steps of:

supplying a first radio frequency electric power for generating plasma, the first radio frequency electric power being pulse-modulated with a first pulsed waveform having a first period and a second period;

supplying a second radio frequency electric power to a sample stage on which a sample is mounted, the second radio frequency electric power being pulse-modulated with a second pulsed waveform having an on period and an off period;

controlling to supply the first radio frequency electric power during the first period to generate the plasma and the first radio frequency electric power during the second period to maintain after-glow of the plasma without igniting the plasma;

controlling a predetermined time delay between a start of the second period and a start of the on period;

controlling the second period so as to include the on period;

controlling the first radio frequency electric power during the second period so as to be greater than the second radio frequency electric power during the on period;

controlling the second radio frequency electric power so as to only be supplied during the second period; and

controlling to stop the second radio frequency electric power when a peak-to-peak voltage of a radio frequency voltage applied during the on period reaches a predetermined value.

2. The plasma processing method according to claim 1 , wherein the time delay is 0.05 milliseconds.

3. The plasma processing method according to in claim 1 , further comprising the step of:

controlling to turn off output of the second radio frequency power supply when the peak-to-peak voltage of the radio frequency voltage during the on period reaches an upper limit (Vmax), which is the predetermined value.

4. The plasma processing method according to claim 1 ,

wherein the off period includes the first period.

5. A plasma processing method comprising the steps of:

supplying a first radio frequency electric power for generating plasma, the first radio frequency electric power being pulse-modulated with a first pulsed waveform having a first period and a second period;

a second radio frequency power supply that supplies a second radio frequency electric power to a sample stage on which a sample is mounted, the second radio frequency electric power being pulse-modulated with a second pulsed waveform having an on period and an off period; and

controlling to supply the first radio frequency electric power during the first period to generate the plasma and the first radio frequency electric power during the second period to maintain after-glow of the plasma;

controlling the second period so as to include the on period;

controlling the off period so as to include the first period; and

controlling the second radio frequency electric power so as to only be supplied during the second period; and

controlling to turn off output of the second radio frequency power supply when a peak-to-peak voltage of a radio frequency voltage applied during the on period reaches a predetermined value.

6. The plasma processing method according to claim 5 , further comprising the step of:

controlling a period of the first period so as to be smaller than a period of the second period.

7. The plasma processing method according to in claim 5 , wherein the predetermined value is an upper limit (Vmax).

8. A plasma processing method comprising the steps of:

supplying a first radio frequency electric power for generating plasma, the first radio frequency electric power being pulse-modulated with a first pulsed waveform having a first period and a second period;

supplying a second radio frequency electric power to a sample stage on which the sample is mounted, the second radio frequency electric power being pulse-modulated with a second pulsed waveform having an on period and an off period;

controlling to supply the first radio frequency electric power during the first period to generate the plasma and the first radio frequency electric power during the second period to maintain after-glow of the plasma without igniting the plasma;

controlling the second period so as to include the on period;

controlling the second radio frequency electric power so as to only be supplied during the second period;

controlling a period of the first period so as to be smaller than a period of the second period; and

controlling to turn off output of the second radio frequency power supply when a peak-to-peak voltage of a radio frequency voltage applied during the on period reaches a predetermined value.

9. The plasma processing method according to claim 8 , further comprising the step of:

controlling the off period so as to include the first period.

10. The plasma processing method according to claim 8 , further comprising the step of:

controlling a period of the first period so as to be smaller than a period of the on period.

11. The plasma processing method according to claim 10 , further comprising the step of:

controlling a period of the on period so as to be longer than a period of the off period.

12. The plasma processing method according to claim 11 , further comprising the step of:

controlling a period of the second period so as to be longer than a period of the off period.

13. The plasma processing method according to claim 8 , wherein the predetermined value is an upper limit (Vmax).

Priority Claims (2)
JP 2015-190623 · Sep 29, 2015 · national
JP 2016-128288 · Jun 29, 2016 · national
Continuity (2)
Division 15260512 · Sep 9, 2016
Related Publication 20210398777A1 · Dec 23, 2021
Cited By (1)
US 12,400,865