Semiconductor device having heat dissipation structure of curved profile and a manufacturing method thereof
A semiconductor device includes a circuit substrate, a semiconductor package, and a metallic cover. The semiconductor package is disposed on the circuit substrate. The metallic cover is disposed over the semiconductor package and over the circuit substrate. The metallic cover comprises a cap and outer flanges. The cap overlies the semiconductor package. The outer flanges are disposed at edges of the cap, are connected with the cap, and extend towards the circuit substrate. A region of the bottom surface of the cap has a curved profile matching a warpage profile of the semiconductor package and the circuit substrate, and the region having the curved profile extends over the semiconductor package.
1. A semiconductor device, comprising:
a circuit substrate,
a semiconductor package, disposed on the circuit substrate,
a metallic cover, disposed over the semiconductor package and over the circuit substrate, the metallic cover comprising:
a cap overlying the semiconductor package;
outer flanges, disposed at edges of the cap, connected with the cap, and extending from the cap; and
a support, disposed between the outer flanges and the circuit substrate, and extending towards the circuit substrate;
a first connecting component, disposed between the support and the circuit substrate, wherein the first connecting component comprises an adhesive; and
a second connecting component, disposed between the support and the outer flanges, wherein the second connecting component comprises a rubber seal,
wherein a region of a bottom surface of the cap has a curved profile matching a warpage profile of the semiconductor package and the circuit substrate, and the region having the curved profile extends over the semiconductor package, and
wherein the support is laterally spaced from the cap by a gap.
2. The semiconductor device of claim 1 , further comprising a thermal interface material disposed between the cap and the semiconductor package and contacting the region of the cap having the curved profile.
3. The semiconductor device of claim 1 , wherein a top surface of the cap is substantially flat.
4. The semiconductor device of claim 1 , further comprising fasteners extending through the outer flanges and the rubber seal to be tightened in the support.
5. The semiconductor device of claim 1 , wherein a top surface of the cap is non-flat.
6. The semiconductor device of claim 5 , wherein the cap of the metallic cover further comprises:
at least one protrusion, located on the top surface of the cap opposite to the bottom surface, wherein the at least one protrusion is overlapped with the semiconductor package.
7. The semiconductor device of claim 1 , further comprising a plurality of conductive terminals disposed on the circuit substrate, wherein the circuit substrate is disposed between and electrically coupled to the plurality of conductive terminals and the semiconductor package.
8. The semiconductor device of claim 1 , wherein the support comprises:
an outer frame located at an edge of the circuit substrate; and
at least one rib connecting a pair of opposite edges of the outer frame.
9. A semiconductor device, comprising:
a circuit substrate;
a first semiconductor package disposed on the circuit substrate;
a thermal interface material disposed on a rear surface of the first semiconductor package further away from the circuit substrate;
a metallic cap, extending on the thermal interface material over the first semiconductor package and the circuit substrate,
a support, disposed between the metallic cap and the circuit substrate;
a first connecting component, disposed between the support and the circuit substrate, wherein the first connecting component comprises an adhesive; and
a second connecting component, disposed between the support and the metallic cap, wherein the second connecting component comprises a rubber seal,
wherein the rear surface of the first semiconductor package presents a warped profile,
wherein the metallic cap includes a first region in direct contact with the thermal interface material over the semiconductor package,
wherein a thickness of the metallic cap varies throughout the first region conformally to the warped profile of the rear surface of the semiconductor package, the thickness being measured along a vertical stacking direction of the circuit substrate, the first semiconductor package, and the thermal interface material, and
wherein the support is laterally spaced from the metallic cap by a gap.
10. The semiconductor device of claim 9 , wherein the metallic cap includes a silver-diamond composite material.
11. The semiconductor device of claim 9 , wherein the metallic cap comprises a cap and outer flanges extending laterally from the cap at a peripheral edge of the cap, wherein the outer flanges and the cap are integrally formed.
12. The semiconductor device of claim 11 , wherein a thickness of the outer flanges is less than a thickness of the cap.
13. The semiconductor device of claim 11 , wherein a thickness of the outer flanges over the support is constant.
14. The semiconductor device of claim 9 , wherein
the first semiconductor package includes a central chip encapsulated by an encapsulant,
the metallic cap further includes a protrusion formed at a top surface of the metallic cap, and
a footprint of the protrusion overlaps with a span of the central chip.
15. The semiconductor device of claim 9 , wherein the support is disposed between the outer flanges and the circuit substrate, wherein the support comprises:
an outer frame located at an edge of the circuit substrate; and
at least one rib connecting a pair of opposite edges of the outer frame.
16. A manufacturing method of a semiconductor device, comprising:
connecting a semiconductor package to a circuit substrate, wherein the semiconductor package connected to the circuit substrate presents a warped profile and a rear surface of the semiconductor package is uneven;
disposing a first connecting component along edges of the circuit substrate, wherein the first connecting component comprises an adhesive;
disposing a support over the first connecting component, the first connecting component being disposed between the support and the circuit substrate;
disposing a second connecting component over the support, wherein the second connecting component comprises a rubber seal;
disposing a metallic cover over the semiconductor package and over the circuit substrate, wherein the metallic cover includes a cap overlying the semiconductor package and having an uneven bottom surface with a complementary shape with respect to the rear surface of the semiconductor package and outer flanges disposed at edges of the cap and connected to with the cap, and the outer flanges extend from the cap, wherein the support is disposed between the outer flanges and the circuit substrate and extended towards the circuit substrate, and the second connecting structure is disposed between the support and the outer flanges, wherein the support is laterally spaced from the cap by a gap;
matching the uneven bottom surface of the cap with the uneven rear surface of the semiconductor package; and
bonding the metallic cover to the circuit substrate via the second connecting component.
17. The manufacturing method of claim 16 , wherein bonding the metallic cover to the circuit substrate comprises securing the outer flanges to the support via a fastener extending through the outer flanges and the second connecting component and being received in the support.
18. The manufacturing method of claim 16 , wherein, before bonding, a top surface of the metallic cover opposite to the bottom surface has a curved profile, and, upon bonding, the top surface of the metallic cover becomes substantially flat.
19. The manufacturing method of claim 16 , further comprising
disposing a plurality of conductive terminals on the circuit substrate, wherein the circuit substrate is disposed between and electrically coupled to the plurality of conductive terminals and the semiconductor package.
20. The manufacturing method of claim 16 , wherein disposing the first connecting component comprises forming the first connecting component into a form of a frame following a profile of an outer periphery of the circuit substrate.