Bulk acoustic wave device with raised frame structure

1. A bulk acoustic wave device comprising:

a first electrode;

a second electrode;

a piezoelectric layer positioned between the first electrode and the second electrode; and

a multi-layer raised frame structure configured to cause lateral energy leakage from a main acoustically active region of the bulk acoustic wave device to be reduced, the multi-layer raised frame structure including a first raised frame layer embedded in the piezoelectric layer and a second raised frame layer, the first raised frame layer having a lower acoustic impedance than the piezoelectric layer, the second raised frame layer at least partly overlapping with the first raised frame layer in a raised frame region of the bulk acoustic wave device, and the bulk acoustic wave device being configured to generate a bulk acoustic wave.

2. The bulk acoustic wave device of claim 1 wherein the second raised frame layer is embedded in the piezoelectric layer.

3. The bulk acoustic wave device of claim 1 wherein the first raised frame layer includes an oxide and the second raised frame layer includes a metal.

4. The bulk acoustic wave device of claim 1 wherein the first raised frame layer is a silicon dioxide layer and the second raised frame layer is metallic.

5. The bulk acoustic wave device of claim 4 wherein the second raised frame layer is embedded in the piezoelectric layer.

6. The bulk acoustic wave device of claim 1 wherein the multi-layer raised frame structure is a multi-gradient raised frame structure.

7. The bulk acoustic wave device of claim 6 wherein the second raised frame layer extends beyond the first raised frame layer on opposing sides of the multi-layer raised frame structure.

8. The bulk acoustic wave device of claim 6 wherein the multi-gradient raised frame structure has a non-gradient portion between two gradient portions.

9. The bulk acoustic wave device of claim 6 wherein the second raised frame layer has a first taper angle on a first side and a second taper angle on a second side, and the first and second taper angles are each greater than 5 degrees and less than 45 degrees.

10. The bulk acoustic wave device of claim 1 wherein the multi-layer raised frame structure surrounds the main acoustically active region of the bulk acoustic wave device in plan view.

11. The bulk acoustic wave device of claim 1 wherein the bulk acoustic wave device is a film bulk acoustic resonator.

12. An acoustic wave filter comprising:

a bulk acoustic wave device configured to generate a bulk acoustic wave,

the bulk acoustic wave device including a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a multi-layer raised frame structure configured to cause lateral energy leakage from a main acoustically active region of the bulk acoustic wave device to be reduced, the multi-layer raised frame structure including a first raised frame layer and a second raised frame layer, the first raised frame layer being embedded in the piezoelectric layer and having a lower acoustic impedance than the piezoelectric layer, and the second raised frame layer at least partly overlapping with the first raised frame layer in a raised frame region of the bulk acoustic wave device; and

at least one additional acoustic wave device, the bulk acoustic wave device and the at least one additional acoustic wave device together arranged to filter a radio frequency signal.

13. The acoustic wave filter of claim 12 wherein the at least one additional acoustic wave device includes a second bulk acoustic wave device that includes a raised frame layer embedded in a piezoelectric layer of the second bulk acoustic wave device.

14. The acoustic wave filter of claim 12 wherein the multi-layer raised frame structure is a multi-gradient raised frame structure.

15. The acoustic wave filter of claim 14 wherein the second raised frame layer has a first taper angle on a first side and a second taper angle on a second side, and the first and second taper angles are each greater than 5 degrees and less than 45 degrees.

16. The acoustic wave filter of claim 12 wherein the first raised frame layer is an oxide and the second raised frame layer is metallic.

17. The acoustic wave filter of claim 12 wherein the first raised frame layer is a silicon dioxide layer.

18. A packaged radio frequency module comprising:

an acoustic wave filter including a bulk acoustic wave device configured to generate a bulk acoustic wave, the bulk acoustic wave device including a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a multi-layer raised frame structure configured to cause lateral energy leakage from a main acoustically active region of the bulk acoustic wave device to be reduced, the multi-layer raised frame structure including a first raised frame layer and a second raised frame layer, the first raised frame layer being embedded in the piezoelectric layer and having a lower acoustic impedance than the piezoelectric layer, and the second raised frame layer at least partly overlapping with the first raised frame layer in a raised frame region of the bulk acoustic wave device;

a radio frequency circuit element; and

a package structure enclosing the acoustic wave filter and the radio frequency circuit element.

19. The packaged radio frequency module of claim 18 wherein the radio frequency circuit element is a radio frequency switch.

20. The packaged radio frequency module of claim 18 wherein the radio frequency circuit element is a radio frequency amplifier.