Semiconductor device including chalcogen compound and semiconductor apparatus including the same
A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. The switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in a thickness direction thereof. The switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).
1. A semiconductor device comprising:
a first electrode;
a second electrode separated from the first electrode; and
a chalcogen compound layer arranged between the first electrode and the second electrode, wherein
the chalcogen compound layer includes a first element including one or more selected from the group consisting of germanium (Ge) and tin (Sn),
the chalcogen compound layer includes,
a second element including one or more selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te),
a third element including one or more selected from the group consisting of arsenic (As), antimony (Sb), silicon (Si) and bismuth (Bi), and
a fourth element including one or more selected from the group consisting of boron (B), aluminum (Al), and scandium (Sc), manganese (Mn), strontium (Sr), and indium (In), wherein
the fourth element has a concentration gradient in a thickness direction of the chalcogen compound layer.
2. The semiconductor device of claim 1 ,
wherein the chalcogen compound layer further includes a fifth element including one or more selected from the group consisting of carbon (C), nitrogen (N), oxygen (O), phosphorus (P), and sulfur (S), and
wherein the fifth element has a concentration gradient in the thickness direction of the chalcogen compound layer.
3. The semiconductor device of claim 2 , wherein the concentration gradient of the fifth element is opposite the concentration gradient of the fourth element.