Semiconductor packages with roughened conductive components
In some examples, a semiconductor package comprises a die pad, a semiconductor die on the die pad, and a mold compound covering the die pad and the semiconductor die. The semiconductor package includes a conductive component including a roughened surface, the roughened surface having a roughness ranging from an arithmetic mean surface height (SA) of 1.4 to 3.2. The mold compound is coupled to the roughened surface. The semiconductor package includes a bond wire coupling the semiconductor die to the roughened surface. The bond wire is directly coupled to the roughened surface without a precious metal positioned therebetween.
1. A semiconductor package, comprising:
a die pad with a first roughened conductive surface;
a conductive lead with a second roughened conductive surface, wherein the first and second roughened conductive surfaces include nodules of non-precious metal;
a semiconductor die disposed over the first roughened conductive surface; and
a bond wire coupling the semiconductor die to the second roughened conductive surface, the bond wire directly coupled to the second roughened conductive surface.
2. The semiconductor package of claim 1 , wherein the first and second roughened conductive surfaces have a roughness ranging from an arithmetic mean surface height (SA) of 1.4 to 3.2.
3. The semiconductor package of claim 1 , wherein the bond wire fills an orifice in the second roughened conductive surface.
4. The semiconductor package of claim 1 , wherein the bond wire covers a protrusion of the second roughened conductive surface.
5. The semiconductor package of claim 1 , further comprising:
a mold compound encapsulating the die pad, the semiconductor die, and at least a portion of the conductive lead.
6. The semiconductor package of claim 5 , wherein the mold compound covers a protrusion of the second roughened conductive surface.
7. The semiconductor package of claim 5 , wherein the mold compound fills an orifice in the second roughened conductive surface.
8. The semiconductor package of claim 5 , wherein the mold compound forms a housing of the semiconductor package, and wherein the second roughened conductive surface terminates inside the housing.
9. The semiconductor package of claim 8 , wherein the conductive lead includes a part extended outside the housing, and wherein the part extended outside the housing has a surface that is even or smooth.
10. The semiconductor package of claim 1 , wherein an anti-tarnish layer covers the first roughened conductive surface.
11. The semiconductor package of claim 10 , wherein the anti-tarnish layer includes potassium sorbate, sodium dodecyl sulfate, sodium molybdate, benzotriazole, or a combination thereof.
12. The semiconductor package of claim 10 , further comprising:
an adhesive layer disposed between the anti-tarnish layer and the semiconductor die.
13. The semiconductor package of claim 1 , wherein the nodules of non-precious metal are plated on the die pad and on the conductive lead, respectively.
14. The semiconductor package of claim 1 , wherein the first and second roughened conductive surfaces include a copper-iron alloy.
15. A semiconductor package, comprising:
a conductive lead with a roughened conductive surface including nodules of non-precious metal;
a solder ball directly coupled to the roughened conductive surface of the conductive lead; and
a semiconductor die attached to the solder ball, the semiconductor die including a surface with a circuit formed therein, wherein the surface of the semiconductor die faces the solder ball.
16. The semiconductor package of claim 15 , wherein the roughened conductive surface has a roughness ranging from an arithmetic mean surface height (SA) of 1.4 to 3.2.
17. The semiconductor package of claim 15 , wherein the solder ball fills an orifice in the roughened conductive surface.
18. The semiconductor package of claim 15 , wherein the solder ball covers a protrusion of the roughened conductive surface.
19. The semiconductor package of claim 15 , further comprising:
a mold compound encapsulating the semiconductor die, the solder ball, and at least a portion of the conductive lead.
20. The semiconductor package of claim 19 , wherein the mold compound covers a protrusion of the roughened conductive surface.
21. The semiconductor package of claim 19 , wherein the mold compound fills an orifice in the roughened conductive surface.
22. The semiconductor package of claim 19 , wherein the mold compound forms a housing of the semiconductor package, the roughened conductive surface terminating inside the housing.
23. The semiconductor package of claim 19 , wherein the semiconductor package is a quad flat no-lead (QFN) style package.
24. The semiconductor package of claim 15 , wherein the roughened conductive surface includes a copper-iron alloy.
25. The semiconductor package of claim 15 , wherein the nodules of non-precious metal are plated on the conductive lead.