Method and device for etching silicon oxide

1. A method of dry-etching silicon oxide, comprising:

contacting silicon oxide with a treatment gas comprising any one of the following (a) to (c):

(a) a hydrogen fluoride and an organic amine compound,

(b) a hydrogen fluoride salt of an organic amine compound, and

(c) a hydrogen fluoride, an organic amine compound, and a hydrogen fluoride salt of an organic amine compound,

in a non-plasma state,

wherein a reaction product of the reaction sublimates into a gas as soon as it is generated, so that the silicon oxide is removed, and

the organic amine compound is a secondary amine or a tertiary amine.

2. The method of dry-etching silicon oxide according to claim 1 ,

wherein a temperature of the silicon oxide upon the reaction is 200° C. or lower.

3. The method of dry-etching silicon oxide according to claim 2 ,

wherein a temperature of the silicon oxide upon the reaction is 50° C. or higher and 200° C. or lower.

4. The method of dry-etching silicon oxide according to claim 1 ,

wherein a ratio of the organic amine compound to the hydrogen fluoride included in the treatment gas, as determined by dividing the number of moles of the organic amine compound by the number of moles of the hydrogen fluoride, is 0.001 or higher but 100 or lower.

5. The method of dry-etching silicon oxide according to claim 1 ,

wherein the organic amine compound is represented by the following formula (1):

wherein N represents a nitrogen atom, R 1 and R 2 each represent a C1-C10 hydrocarbon group optionally having a ring, a heteroatom, or a halogen atom, and represents a hydrogen atom or a C1-C10 hydrocarbon group optionally having a ring, a heteroatom, or a halogen atom, provided that: the hydrocarbon group, when it has a carbon number of three or more, optionally has a branched chain structure or a ring structure; the heteroatom in the hydrocarbon group is a nitrogen atom, an oxygen atom, a sulfur atom, or a phosphorus atom; R 1 and R 2 , when both of them are hydrocarbon groups having a carbon number of one or more, are optionally directly bonded to each other to form a ring structure; R′ and R 2 , when they are directly bonded to each other via a double bond to form a ring structure, they optionally form an aromatic ring in the absence of R 3 ; and R 1 , R 2 , and R 3 are optionally hydrocarbon groups which are the same as or different from one another.

6. The method of dry-etching silicon oxide according to claim 1 ,

wherein the secondary amine is at least one compound selected from the group consisting of dimethylamine, diethylamine, di-normal propylamine, diisopropylamine, dibutylamine, and di-tertiary butylamine.

7. The method of dry-etching silicon oxide according to claim 1 ,

wherein the tertiary amine is at least one compound selected from the group consisting of trimethylamine, dimethylethylamine, diethylmethylamine, and triethylamine.

8. The method of dry-etching silicon oxide according to claim 1 , further comprising selectively etching a silicon oxide film on a substrate to be treated where both the silicon oxide film and a silicon nitride film are exposed.

9. The method of dry-etching silicon oxide according to claim 8 ,

wherein a selection ratio of the silicon oxide film to the silicon nitride film is 2.5 or higher.

10. The method of dry-etching silicon oxide according to claim 1 , further comprising selectively etching a silicon oxide film on a substrate to be treated where both the silicon oxide film and a polycrystalline silicon film are exposed.

11. A method of producing a semiconductor device, comprising

etching a silicon oxide film on a semiconductor substrate including the silicon oxide film using the method of dry-etching silicon oxide according to claim 1 .

12. A method of dry-etching silicon oxide, comprising:

selectively etching a silicon oxide film on a substrate to be treated where both the silicon oxide film and a silicon nitride film are exposed,

wherein the selectively etching comprises contacting the silicon oxide film and the silicon nitride film with a treatment gas comprising any one of the following (a) to (c):

(a) a hydrogen fluoride and an organic amine compound,

(b) a hydrogen fluoride salt of an organic amine compound, and

(c) a hydrogen fluoride, an organic amine compound, and a hydrogen fluoride salt of an organic amine compound,

to obtain a reaction in a non-plasma state,

wherein the treatment gas does not comprise isopropyl alcohol, and

a reaction product of the reaction sublimates into a gas as soon as it is generated, so that the silicon oxide is removed.

13. The method of dry-etching silicon oxide according to claim 12 , wherein a temperature of the silicon oxide upon the reaction is 50° C. or higher.