Selective etching with fluorine, oxygen and noble gas containing plasmas
A method for processing a substrate that includes: loading the substrate in a plasma processing chamber; performing a cyclic plasma etch process including a plurality of cycles, where each cycle of the plurality of cycles includes: generating a first plasma from a first gas mixture including a fluorosilane and oxygen; performing a deposition step by exposing the substrate to the first plasma to form a passivation film including silicon and fluorine; generating a second plasma from a second gas mixture including a noble gas; and performing an etch step by exposing the substrate to the second plasma.
1. A method for processing a substrate, the method comprising:
loading the substrate in a plasma processing chamber;
performing a cyclic plasma etch process comprising a plurality of cycles, wherein the substrate is maintained at a temperature between −120° C. and 0° C. during the cyclic plasma etch process, and wherein each cycle of the plurality of cycles comprises:
generating a first plasma from a first gas mixture comprising a fluorosilane and oxygen;
performing a deposition step by exposing the substrate to the first plasma to form a passivation film comprising silicon and fluorine;
generating a second plasma from a second gas mixture comprising a noble gas; and
performing an etch step by exposing the substrate to the second plasma.
2. The method of claim 1 , further comprising:
exposing the substrate to a hydrogen containing plasma prior to performing the cyclic plasma etch process.
3. The method of claim 1 , wherein each cycle of the plurality of cycles further comprises exposing the substrate to a hydrogen containing plasma.
4. The method of claim 1 , wherein the first gas mixture further comprises a hydrogen-containing gas so that exposing the substrate to the first plasma also exposes the substrate to a hydrogen containing plasma.
5. The method of claim 1 , wherein the substrate comprises a first exposed surface comprising silicon nitride, a second exposed surface comprising silicon dioxide, and a third exposed surface comprising silicon, wherein, during the cyclic plasma etch process, the first exposed surface is selectively etched relative to the second and third exposed surfaces.
6. The method of claim 1 , wherein the fluorosilane comprises silicon tetrafluoride (SiF 4 ).
7. The method of claim 1 , wherein the fluorosilane comprises a hydrofluorosilane.
8. The method of claim 7 , wherein the hydrofluorosilane comprises trifluorosilane (SiHF 3 ), difluorosilane (SiH 2 F 2 ), or fluorosilane (SiH 3 F).
9. A method for processing a substrate, the method comprising:
having a substrate comprising a first region, a second region, and a third region, the first region comprising a nitride of a first element, the second region comprising an oxide of the first element, and the third region comprising an elemental form of the first element; and
selectively etching the first region relative to the second and third regions by using a multiple step plasma process in a plasma process chamber, the multiple step plasma process comprising:
while maintaining the substrate at a first temperature, exposing the substrate to a first plasma generated from a first gas mixture comprising a silane, a fluorine-containing gas, and oxygen, the first temperature being lower or equal to 0° C.; and
while maintaining the substrate at a second temperature, exposing the substrate to a second plasma generated from a second gas mixture comprising a noble gas.
10. The method of claim 9 , wherein the first temperature is lower than the second temperature.
11. The method of claim 9 , wherein the first temperature is between −120° C. and 0° C., and wherein the second temperature is between −200° C. and 100° C.
12. The method of claim 9 , wherein the silane comprises monosilane (SiH 4 ), and the fluorine-containing gas comprises tetrafluoromethane (CF 4 ), difluorine (F 2 ), nitrogen trifluoride (NF 3 ), sulfur hexafluoride (SF 6 ), hexafluoroethane (C 2 F 6 ), octafluorocyclobutane (C 4 F 8 ), perfluoroisobutene (C 4 F 8 ) fluoroform (CHF 3 ), or hydrogen fluoride (HF).
13. The method of claim 9 , wherein the first element comprises Si, Ge, B, W, Al, Ti, Ga, Ta, Hf, or Zr.
14. The method of claim 9 , further comprising:
exposing the substrate to a hydrogen containing plasma; and
selectively etching the third region.
15. The method of claim 9 , wherein the first gas mixture further comprises a hydrogen-containing gas so that exposing the substrate to the first plasma also exposes the substrate to a hydrogen containing plasma.
16. A method for processing a substrate, the method comprising:
having a substrate comprising a first region, a second region, and a third region, the first region comprising a nitride of a first element, the second region comprising an oxide of the first element, and the third region comprising an elemental form of the first element; and
selectively etching the first region relative to the second and third regions by using a plasma process comprising:
while maintaining the substrate at a first temperature, exposing the substrate to a plasma generated from a gas mixture comprising silicon, fluorine, oxygen, and a noble gas, the first temperature being lower or equal to 0° C.
17. The method of claim 16 , wherein the plasma process is a continuous plasma process, and wherein the silicon and the fluorine in the gas mixture is a part of a fluorosilane.
18. The method of claim 16 , wherein the plasma process is a cyclic plasma process comprising a plurality of cycles in a plasma process chamber, each cycle of the plurality of cycles comprising the exposing to the plasma generated from the gas mixture and further exposing the substrate to a hydrogen containing plasma, and wherein the silicon and the fluorine in the gas mixture is a part of a fluorosilane.
19. The method of claim 16 , wherein the silicon in the gas mixture is a part of a hydrofluorosilane or a silane.
20. The method of claim 16 , wherein the first element comprises Si, Ge, B, W, Al, Ti, Ga, Ta, Hf, or Zr.