Photoresist composition and method of manufacturing a semiconductor device
Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Photoresist layer is selectively exposed to radiation, and selectively exposed photoresist layer developed. Photoresist composition includes photoactive compound, crosslinker, copolymer. The copolymer is A1 and A2 are independently direct link, C6-C15 phenyl group, C7-C15 benzyl group, C1-C15 alkyl group, C3-C15 cycloalkyl group, C1-C15 hydroxyalkyl group, C2-C15 alkoxy group, C3-C15 alkoxy alkyl group, C2-C15 acetyl group, C3-C15 acetyl alkyl group, C1-C15 carboxyl group, C2-C15 alkyl carboxyl group, C4-C15 cycloalkyl carboxyl group, C3-C15 saturated or unsaturated hydrocarbon ring, C2-C15 hetero chain, C3-C15 heterocyclic ring, or three dimensional ring structure; R1 is thermal or acid labile group including C4-C15 alkyl, cycloalkyl, hydroxyalkyl, alkoxy, or alkoxy alkyl group, or three dimensional ring structure; R2 is substituted or unsubstituted C4-C10 cycloalkyl group; Ra and Rb are independently H or CH 3 ; and 0<x/(x+y)<1 and 0<y/(x+y)<1.
1. A method of manufacturing a semiconductor device, comprising:
forming a photoresist layer comprising a photoresist composition over a substrate;
selectively exposing the photoresist layer to actinic radiation; and
developing the selectively exposed photoresist layer to remove regions of the photoresist layer not exposed to the actinic radiation,
wherein the photoresist composition comprises:
a photoactive compound;
a crosslinker; and
a copolymer,
wherein the copolymer is made up of 95% or greater of repeating units a′ and b′
wherein A1 is a direct link, a C6-C15 phenyl group, a C7-C15 benzyl group, a C1-C15 alkyl group, a C3-C15 cycloalkyl group, a C1-C15 hydroxyalkyl group, a C2-C15 alkoxy group, a C3-C15 alkoxy alkyl group, a C2-C15 acetyl group, a C3-C15 acetyl alkyl group, a C1-C15 carboxyl group, a C2-C15 alkyl carboxyl group, a C4-C15 cycloalkyl carboxyl group, a C3-C15 saturated or unsaturated hydrocarbon ring, a C2-C15 hetero chain, a C3-C15 heterocyclic ring, or a substituted or unsubstituted three dimensional ring structure;
A2 is a C6-C15 phenyl group, a C7-C15 benzyl group, a C1-C15 alkyl group, a C3-C15 cycloalkyl group, a C1-C15 hydroxyalkyl group, a C2-C15 alkoxy group, a C3-C15 alkoxy alkyl group, a C2-C15 acetyl group, a C3-C15 acetyl alkyl group, a C2-C15 alkyl carboxyl group, a C4-C15 cycloalkyl carboxyl group, a C3-C15 saturated or unsaturated hydrocarbon ring, a C2-C15 hetero chain, a C3-C15 heterocyclic ring, or a substituted or unsubstituted three dimensional ring structure;
R2 is a C4-C10 lactone group substituted with a C1-C4 alcohol group;
Ra and Rb are independently H or CH 3 ; and
0<x/(x+y)<1 and 0<y/(x+y)<1.
2. The method according to claim 1 , wherein the crosslinker is
3. The method according to claim 1 , wherein the photoactive compound is a photoacid generator.
4. The method according to claim 1 , wherein the actinic radiation is deep ultraviolet radiation.
5. The method according to claim 4 , wherein the deep ultraviolet radiation is emitted from a KrF laser.
6. The method according to claim 1 , further comprising heating the selectively exposed photoresist layer at a temperature ranging from 50° C. to 160° C. before the developing.
7. The method according to claim 1 , wherein the selective exposure to actinic radiation causes the photoactive compound to generate an acid that opens the R2 ring.
8. The method according to claim 7 , wherein the crosslinker cross-links the copolymer at a site where the R2 ring is opened.
9. The method according to claim 1 , wherein the lactone group is one or more selected from the group consisting of
10. The method according to claim 1 , wherein the developing the selectively exposed photoresist layer is performed using a developer having a pH >10.
11. A method of manufacturing a semiconductor device, comprising:
forming a resist layer comprising a resist composition over a substrate;
forming a latent pattern in the resist layer by exposing first regions of the resist layer to actinic radiation,
wherein second regions of the resist layer are not exposed to the actinic radiation; and
developing the latent pattern in the resist layer by removing the second regions of the photoresist layer,
wherein the resist composition comprises:
a crosslinker; and
a copolymer,
wherein the copolymer is made up of 95% or greater of repeating units a′ and b′
wherein A1 is a direct link, a C6-C15 phenyl group, a C7-C15 benzyl group, a C1-C15 alkyl group, a C3-C15 cycloalkyl group, a C1-C15 hydroxyalkyl group, a C2-C15 alkoxy group, a C3-C15 alkoxy alkyl group, a C2-C15 acetyl group, a C3-C15 acetyl alkyl group, a C1-C15 carboxyl group, a C2-C15 alkyl carboxyl group, a C4-C15 cycloalkyl carboxyl group, a C3-C15 saturated or unsaturated hydrocarbon ring, a C2-C15 hetero chain, a C3-C15 heterocyclic ring, or a substituted or unsubstituted three dimensional ring structure;
A2 is a C6-C15 phenyl group, a C7-C15 benzyl group, a C1-C15 alkyl group, a C3-C15 cycloalkyl group, a C1-C15 hydroxyalkyl group, a C2-C15 alkoxy group, a C3-C15 alkoxy alkyl group, a C2-C15 acetyl group, a C3-C15 acetyl alkyl group, a C2-C15 alkyl carboxyl group, a C4-C15 cycloalkyl carboxyl group, a C3-C15 saturated or unsaturated hydrocarbon ring, a C2-C15 hetero chain, a C3-C15 heterocyclic ring, or a substituted or unsubstituted three dimensional ring structure;
R2 is a C4-C10 lactone group substituted with a C1-C4 alcohol group;
Ra and Rb are independently H or CH 3 ; and
0<x/(x+y)<1 and 0<y/(x+y)<1.
12. The method according to claim 11 , wherein the latent pattern is formed by patternwise exposing the resist layer to radiation from a KrF laser.
13. The method according to claim 11 , further comprising heating the resist layer at a temperature ranging from 40° C. to 160° C. before developing the latent pattern.
14. The method according to claim 11 , wherein the crosslinker is
15. The method according to claim 11 , wherein the lactone group is one or more selected from the group consisting of
16. The method according to claim 11 , wherein the developing the latent pattern in the resist layer is performed using a developer having a pH >10.
17. A photoresist composition, comprising:
a photoactive compound;
a crosslinker; and
a copolymer,
wherein the copolymer is made up of 95% or greater of repeating units a′ and b′
wherein A1 is a direct link, a C6-C15 phenyl group, a C7-C15 benzyl group, a C1-C15 alkyl group, a C3-C15 cycloalkyl group, a C1-C15 hydroxyalkyl group, a C2-C15 alkoxy group, a C3-C15 alkoxy alkyl group, a C2-C15 acetyl group, a C3-C15 acetyl alkyl group, a C1-C15 carboxyl group, a C2-C15 alkyl carboxyl group, a C4-C15 cycloalkyl carboxyl group, a C3-C15 saturated or unsaturated hydrocarbon ring, a C2-C15 hetero chain, a C3-C15 heterocyclic ring, or a substituted or unsubstituted three dimensional ring structure;
A2 is a C6-C15 phenyl group, a C7-C15 benzyl group, a C1-C15 alkyl group, a C3-C15 cycloalkyl group, a C1-C15 hydroxyalkyl group, a C2-C15 alkoxy group, a C3-C15 alkoxy alkyl group, a C2-C15 acetyl group, a C3-C15 acetyl alkyl group, a C2-C15 alkyl carboxyl group, a C4-C15 cycloalkyl carboxyl group, a C3-C15 saturated or unsaturated hydrocarbon ring, a C2-C15 hetero chain, a C3-C15 heterocyclic ring, or a substituted or unsubstituted three dimensional ring structure;
R2 is a C4-C10 lactone group substituted with a C1-C4 alcohol group;
Ra and Rb are independently H or CH 3 ; and
0<x/(x+y)<1 and 0<y/(x+y)<1,
wherein the photoresist composition is a negative tone photoresist composition.
18. The photoresist composition of claim 17 , wherein the photoactive compound is a photoacid generator.
19. The photoresist composition of claim 17 , wherein the crosslinker is
20. The photoresist composition according to claim 17 , wherein the lactone group is one or more selected from the group consisting of