System and method for mitigating overlay distortion patterns caused by a wafer bonding tool
A system includes a wafer shape metrology sub-system configured to perform one or more shape measurements on post-bonding pairs of wafers. The system includes a controller communicatively coupled to the wafer shape metrology sub-system. The controller receives a set of measured distortion patterns. The controller applies a bonder control model to the measured distortion patterns to determine a set of overlay distortion signatures. The bonder control model is made up of a set of orthogonal wafer signatures that represent the achievable adjustments. The controller determines whether the set of overlay distortion signatures associated with the measured distortion patterns are outside tolerance limits provides one or more feedback adjustments to the bonder tool.
1. A system comprising:
a wafer shape metrology sub-system configured to perform one or more shape measurements on a pair of pre-bonding wafers and a corresponding post-bonding pair of wafers; and
a controller communicatively coupled to the wafer shape metrology sub-system, the controller including one or more processors configured to execute a set of program instructions stored in a memory, the set of program instructions configured to cause the one or more processors to:
generate a bonder control model, wherein generate the bonder control model includes generate a set of stored orthogonal wafer signatures based on actuator-induced changes;
receive a set of measured bonding distortions;
apply the bonder control model to the measured bonding distortions;
determine whether a set of predicted overlay distortion signatures associated with the set of measured bonding distortions are outside tolerance limits; and
provide one or more feedback adjustments to the bonder tool to adjust one or more bonder tool adjustors when the set of predicted overlay distortion signatures are outside tolerance limits.
2. The system of claim 1 , wherein the generating the bonder control model comprises:
bonding wafer pairs with different settings of the one or more adjustors of the bonder tool to generate a set of overlay distortion patterns;
measuring at least some of the overlay distortion patterns of the set of overlay distortion patterns using the wafer shape metrology sub-system;
extracting actuator-induced changes as the difference in the overlay distortion patterns relative to a set of control adjustor positions; and
generating the set of stored orthogonal wafer signatures based on the actuator-induced changes.
3. The system of claim 1 , wherein the providing one or more feedback adjustments when the set of predicted overlay distortion signatures are outside tolerance limits comprises:
providing the one or more feedback adjustments to the one or more bonder tool adjustors to minimize a predicted overlay distortion signature.
4. The system of claim 3 , wherein the one or more bonder tool adjustors is communicatively coupled to one or more actuators on the bonder tool.
5. The system of claim 1 , wherein the wafer shape metrology sub-system comprises a first interferometer sub-system and a second interferometer sub-system.
6. A system comprising:
a controller communicatively coupled to a wafer shape metrology sub-system, the controller including one or more processors configured to execute a set of program instructions stored in a memory, the set of program instructions configured to cause the one or more processors to:
generate a bonder control model, wherein generate the bonder control model includes generate a set of stored orthogonal wafer signatures based on actuator-induced changes;
receive a set of measured bonding distortions;
apply the bonder control model to the measured bonding distortions;
determine whether a set of predicted overlay distortion signatures associated with the set of measured bonding distortions are outside tolerance limits; and
provide one or more feedback adjustments to the bonder tool to adjust one or more bonder tool adjustors when the set of predicted overlay distortion signatures are outside tolerance limits.
7. The system of claim 6 , wherein the generating the bonder control model comprises:
bonding wafer pairs with different settings of the one or more adjustors of the bonder tool to generate a set of overlay distortion patterns;
measuring at least some of the overlay distortion patterns of the set of overlay distortion patterns using the wafer shape metrology sub-system;
extracting actuator-induced changes as the difference in the overlay distortion patterns relative to a set of control adjustor positions; and
generating the set of stored orthogonal wafer signatures based on the actuator-induced changes.
8. The system of claim 6 , wherein the providing one or more feedback adjustments when the set of predicted overlay distortion signatures are outside tolerance limits comprises:
providing the one or more feedback adjustments to the one or more bonder tool adjustors to minimize a predicted overlay distortion signature.
9. The system of claim 6 , wherein the one or more bonder tool adjustors is communicatively coupled to one or more actuators on the bonder tool.
10. The system of claim 6 , wherein the wafer shape metrology sub-system comprises a first interferometer sub-system and a second interferometer sub-system.
11. A method comprising:
generating a bonder control model, wherein generate the bonder control model includes generate a set of stored orthogonal wafer signatures based on actuator-induced changes;
receiving a set of measured bonding distortions;
applying the bonder control model to the measured bonding distortions;
determining whether a set of predicted overlay distortion signatures associated with the set of measured bonding distortions are outside tolerance limits; and
providing one or more feedback adjustments to the bonder tool to adjust one or more bonder tool adjustors when the set of predicted overlay distortion signatures are outside tolerance limits.
12. The method of claim 11 , wherein the generating the bonder control model comprises:
bonding wafer pairs with different settings of the one or more adjustors of the bonder tool to generate a set of overlay distortion patterns;
measuring at least some of the overlay distortion patterns of the set of overlay distortion patterns using the wafer shape metrology sub-system;
extracting actuator-induced changes as the difference in the overlay distortion patterns relative to a set of control adjustor positions; and
generating the set of stored orthogonal wafer signatures based on the actuator-induced changes.
13. The method of claim 11 , further comprising:
generating an adjustor control group via bonding wafer pairs with known adjustor settings.
14. The method of claim 11 , wherein the generating a set of orthogonal wafer signatures is achieved through principal component analysis.
15. The method of claim 11 , wherein the orthogonal wafer signatures are mapped to one or more bonder tool adjustors.
16. The method of claim 11 , wherein the one or more bonder tool adjustors are controlled manually.
17. The method of claim 11 , wherein the one or more bonder tool adjustors are controlled via a computer system.
18. The method of claim of 11 , wherein the extracting actuator-induced changes as the difference in the overlay distortion patterns relative to a set of control adjustor positions comprises:
comparing the actuator induced changes to the adjustor control group.