Plasma processing apparatus and method for using plasma processing apparatus
Disclosed is a plasma processing apparatus 10 including a chamber 11 , a stage 12 , a dielectric member 13 , a cover 14 , a gas introduction path 15 , and an induction coil 16 . The induction coil 16 includes a first induction coil 17 installed so as to overlap a central region R 1 of the dielectric member 13 , and a second induction coil 18 installed so as to overlap a peripheral region R 2 outside the central region R 1 of the dielectric member 13 . The cover 14 has a first gas hole 14 c formed at a position overlapping the central region R 1 and a second gas hole 14 d formed at a position overlapping the peripheral region R 2 . The gas introduction path 15 has a first gas introduction path 15 a communicating with the first gas hole 14 c and a second gas introduction path 15 b communicating with the second gas hole 14 d.
1. A plasma processing apparatus, comprising:
a chamber having an opening at a top;
a stage provided in the chamber, the stage for placing an object to be processed;
a dielectric member closing the opening;
a cover installed so as to cover the dielectric member inside the chamber;
a gas introduction path formed between the dielectric member and the cover, the gas introduction path for introducing a source gas; and
an induction coil provided above the dielectric member and configured to, when applied with a high-frequency power, generate a plasma containing the source gas in the chamber,
the induction coil including a first induction coil installed so as to overlap a central region of the dielectric member, and a second induction coil installed so as to overlap a peripheral region outside the central region of the dielectric member,
the cover having a first gas hole formed at a position overlapping the central region of the dielectric member and a second gas hole formed at a position overlapping the peripheral region of the dielectric member,
the gas introduction path having a first gas introduction path communicating with the first gas hole and a second gas introduction path communicating with the second gas hole.
2. The plasma processing apparatus according to claim 1 , wherein a first distance between the first gas hole and the first induction coil is different from a second distance between the second gas hole and the second induction coil.
3. The plasma processing apparatus according to claim 1 , wherein a flow rate of the source gas introduced into the first gas introduction path is higher than a flow rate of the source gas introduced into the second gas introduction path.
4. The plasma processing apparatus according to claim 1 , wherein the cover has on a lower surface a protrusion provided between the first gas hole and the second gas hole.
5. The plasma processing apparatus according to claim 1 , wherein the first gas introduction path and the second gas introduction path are separated from each other.
6. The plasma processing apparatus according to claim 1 , further comprising:
a support member installed above the dielectric member; and
a metal cover supporting the support member and covering the first and second induction coils; wherein
the first induction coil has a first end at which a high-frequency power is to be applied and a second end that is grounded,
the second end is electrically connected to the metal cover via a conductive member supported by the support member, and
the chamber is electrically connected to the metal cover and grounded.
7. The plasma processing apparatus according to claim 6 , wherein
the second induction coil is formed in a spiral shape extending along a circumferential direction of the chamber, and
the conductive member is formed in a plate shape having a first principal surface and a second principal surface opposite to the first principal surface, and the first and second principal surfaces are arranged so as to extend along a radial direction of the chamber.
8. A method for using a plasma processing apparatus, the plasma processing apparatus including:
a chamber having an opening at a top;
a stage provided in the chamber, the stage for placing an object to be processed;
a dielectric member closing the opening;
a cover installed so as to cover the dielectric member inside the chamber;
a gas introduction path formed between the dielectric member and the cover; and
an induction coil provided above the dielectric member,
the induction coil including a first induction coil installed so as to overlap a central region of the dielectric member, and a second induction coil installed so as to overlap a peripheral region outside the central region of the dielectric member,
the cover having a first gas hole formed at a position overlapping the central region of the dielectric member and a second gas hole formed at a position overlapping the peripheral region of the dielectric member,
the gas introduction path having a first gas introduction path communicating with the first gas hole and a second gas introduction path communicating with the second gas hole, the method comprising:
generating a plasma containing a source gas in the chamber, by introducing the source gas into the first and second gas introduction paths and applying a high-frequency power to the first and second induction coils.
9. The method for using a plasma processing apparatus according to claim 8 , wherein a flow rate of the source gas introduced into the first gas introduction path is higher than a flow rate of the source gas introduced into the second gas introduction path.
10. The method for using a plasma processing apparatus according to claim 8 , wherein the first gas introduction path and the second gas introduction path are separated from each other.