Plasma processing apparatus
A disclosed plasma processing apparatus 10 includes: a chamber 11 having an opening 11 a ; a stage 12 disposed in the chamber 11 , the stage for placing an object to be processed; a dielectric member 13 closing the opening 11 a ; and a plasma generation unit 16 disposed on the opposite side to the chamber 11 with reference to the dielectric member 13 , and configured to, when applied with a high-frequency power, generate a plasma in the chamber 11 . The plasma generation unit 16 has a first coil 17 including one or a plurality of first conductors 17 a connected in parallel with each other, and a second coil 18 disposed so as to surround the first coil 17 and including a plurality of second conductors 18 a connected in parallel with each other. The number of the second conductors 18 a is greater than the number of the first conductors 17 a.
1. A plasma processing apparatus, comprising:
a chamber having an opening;
a stage disposed in the chamber, the stage for placing an object to be processed;
a dielectric member closing the opening; and
a plasma generation unit disposed on an opposite side to the chamber with reference to the dielectric member, and configured to, when applied with a high-frequency power, generate a plasma in the chamber, wherein
the plasma generation unit has a first coil including one or a plurality of first conductors connected in parallel with each other, and a second coil disposed so as to surround the first coil and including a plurality of second conductors connected in parallel with each other, and
the number of the second conductors included in the second coil is greater than the number of the first conductors included in the first coil.
2. The plasma processing apparatus according to claim 1 , further comprising:
a high-frequency power source configured to supply the high-frequency power;
a matcher connected to the high-frequency power source; and
a distributor connected between the matcher and the plasma generation unit, wherein
the distributor has a first distributing circuit configured to distribute part of the high-frequency power to the first coil, and a second distributing circuit configured to distribute part of the high-frequency power to the second coil, and
the first distributing circuit and the second distributing circuit are connected in parallel with each other.
3. The plasma processing apparatus according to claim 2 , wherein
the first distributing circuit has a first variable capacitor and an inductor connected in parallel with each other, and
the second distributing circuit comprises only a second variable capacitor.
4. The plasma processing apparatus according to claim 3 , wherein the first distributing circuit further has a capacitor connected in series with the first variable capacitor and the inductor.