Plasma antenna and apparatus for generating plasma having the same
Provided are a plasma antenna and a plasma generating apparatus including the same. The plasma antenna includes a first antenna inducing electromagnetic fields by using an RF signal, a second antenna inducing electromagnetic fields by using the RF signal, and a capacitor connected between an input terminal of the first antenna and an input terminal of the second antenna.
1. A plasma antenna comprising:
a first antenna configured to induce electromagnetic fields;
a second antenna configured to induce electromagnetic fields; and
a capacitor connected between an input terminal of the first antenna and an input terminal of the second antenna, the capacitor having a male end, the capacitor configured to be above the first antenna,
wherein the first antenna comprises a first RF feed having a pillar shape and a first coil connected to the first RF feed, the first RF feed having a female end configured to directly receive the male end of the capacitor, and
wherein the second antenna comprises a second RF feed having a hollow pillar shape surrounding the first RF feed and a second coil connected to the second RF feed,
wherein the capacitor includes,
a first conductor having a pillar shape, the first conductor coaxial with respect to the first RF feed, and
a second conductor having a hollow pillar shape surrounding the first conductor, the second conductor coaxial with respect to the second RF feed, and
wherein the capacitor is configured to be attached to the first and second antennas,
wherein the capacitor is configured to be attachable to or detachable from the first and second RF feed such that the male end couples the capacitor to the first RF feed, and the second conductor couples the capacitor to the second RF feed,
wherein the first RF feed has a cylindrical shape, and the second RF feed has a hollow cylindrical shape surrounding the cylindrical shape, and
wherein the first conductor, the first RF feed, the second conductor, the second RF feed, the male end, and the female end are coaxial with respect to each other.
2. The plasma antenna of claim 1 , wherein the capacitor further includes a dielectric between the first conductor and the second conductor.
3. The plasma antenna of claim 2 , wherein the dielectric includes a polymer or metal oxide.
4. The plasma antenna of claim 3 , wherein the polymer comprises at least one of Teflon®, ULTEM®, or polyetheretherketone (PEEK).
5. The plasma antenna of claim 3 , wherein the metal oxide comprises ceramic.
6. The plasma antenna of claim 5 , wherein the ceramic comprises at least one of Al2O3 or ZnO.
7. The plasma antenna of claim 1 , wherein the first antenna is configured to induce the electromagnetic fields by using an RF signal applied to the first RF feed, and
wherein the second antenna is configured to induce the electromagnetic fields by using an RF signal applied to the second RF feed.
8. The plasma antenna of claim 1 , wherein the male end of the capacitor protrudes from an end of the first conductor.
9. The plasma antenna of claim 1 , wherein an RF power source is connected to the first antenna and the second antenna.
10. A plasma generating apparatus comprising:
a plasma chamber in which a gas is injected, the plasma chamber configured to generate plasma; and
a plasma antenna on the plasma chamber, the plasma chamber is configured to receive an RF signal from the plasma antenna to induce electromagnetic fields in the plasma chamber,
wherein the plasma antenna includes,
a first antenna configured to induce electromagnetic fields,
a second antenna configured to induce electromagnetic fields, and
a capacitor configured to be connected between an input terminal of the first antenna and an input terminal of the second antenna, the capacitor including a male end, the capacitor configured to be above the first antenna,
wherein the first antenna comprises a first RF feed configured to receive the RF signal and having a pillar shape, the first RF feed including a female end configured to directly receive the male end of the capacitor, the first antenna comprising a first coil connected to the first RF feed,
wherein the second antenna comprises a second RF feed configured to receive the RF signal and having a hollow pillar shape surrounding the first RF feed, the second antenna comprising a second coil connected to the second RF feed,
wherein the capacitor includes,
a first conductor having a pillar shape, the first conductor coaxial with respect to the first RF feed, and
a second conductor having a hollow pillar shape surrounding the first conductor, the second conductor coaxial with respect to the second RF feed,
wherein the capacitor is configured to be attached to the first and second antennas,
wherein the capacitor is configured to be attachable to or detachable from the first and second RF feed such that the male end couples the capacitor to the first RF feed, and the second conductor couples the capacitor to the second RF feed,
wherein the first RF feed has a cylindrical shape, and the second RF feed has a hollow cylindrical shape surrounding the cylindrical shape, and
wherein the first conductor, the first RF feed, the second conductor, the second RF feed, the male end, and the female end are coaxial with respect to each other.
11. The plasma generating apparatus of claim 10 , wherein the male end of the capacitor protrudes from an end of the first conductor.
12. The plasma generating apparatus of claim 10 , wherein the capacitor further includes a dielectric between the first conductor and the second conductor.
13. The plasma generating apparatus of claim 10 , wherein the first antenna is configured to induce the electromagnetic fields by using an RF signal applied to the first RF feed, and
wherein the second antenna is configured to induce the electromagnetic fields by using an RF signal applied to the second RF feed.
14. The plasma generating apparatus of claim 10 , further including an impedance matcher connected to the first antenna and the second antenna.
15. The plasma generating apparatus of claim 14 , further including an RF power source connected to the impedance matcher.
16. A substrate treating apparatus comprising:
a plasma chamber including a chamber body and a dielectric cover;
a gas supply unit including a nozzle mounted on the dielectric cover;
an RF power source;
a plasma antenna;
an impedance matcher between the RF power source and the plasma antenna;
wherein the plasma antenna includes,
a first antenna configured to induce electromagnetic fields;
a second antenna configured to induce electromagnetic fields; and
a capacitor connected between an input terminal of the first antenna and an input terminal of the second antenna, the capacitor having a male end, the capacitor configured to be above the first antenna,
wherein the first antenna comprises a first RF feed having a pillar shape and a first coil connected to the first RF feed, the first RF feed having a female end configured to directly receive the male end of the capacitor, and
wherein the second antenna comprises a second RF feed having a hollow pillar shape surrounding the first RF feed and a second coil connected to the second RF feed,
wherein the capacitor includes:
a first conductor having a pillar shape, the first conductor coaxial with respect to the first RF feed, and
a second conductor having a hollow pillar shape surrounding the first conductor, the second conductor coaxial with respect to the second RF feed,
wherein the capacitor is configured to be attached to the first and second antennas,
wherein the capacitor is configured to be attachable to or detachable from the first and second RF feed such that the male end couples the capacitor to the first RF feed, and the second conductor couples the capacitor to the second RF feed,
wherein the first RF feed has a cylindrical shape, and the second RF feed has a hollow cylindrical shape surrounding the cylindrical shape, and
wherein the first conductor, the first RF feed, the second conductor, the second RF feed, the male end, and the female end are coaxial with respect to each other.
17. The substrate treating apparatus of claim 16 , wherein an RF signal applied to the first RF feed and an RF signal applied to the second RF feed are provided from the impedance matcher.
18. The substrate treating apparatus of claim 16 , wherein the first antenna is configured to induce the electromagnetic fields by using an RF signal provided from the impedance matcher.