Air spacer surrounding conductive features and method forming same
A method includes etching a dielectric layer to form an opening. A first conductive feature underlying the dielectric layer is exposed to the opening. A sacrificial spacer layer is deposited to extend into the opening. The sacrificial spacer layer is patterned. A bottom portion of the sacrificial spacer layer at a bottom of the opening is removed to reveal the first conductive feature, and a vertical portion of the sacrificial spacer layer in the opening and on sidewalls of the dielectric layer is left to form a ring. A second conductive feature is formed in the opening. The second conductive feature is encircled by the ring, and is over and electrically coupled to the first conductive feature. At least a portion of the ring is removed to form an air spacer.
1. A method comprising:
etching a dielectric layer to form an opening, wherein a first conductive feature underlying the dielectric layer is exposed to the opening;
depositing a sacrificial spacer layer extending into the opening;
patterning the sacrificial spacer layer, wherein a bottom portion of the sacrificial spacer layer at a bottom of the opening is removed to reveal the first conductive feature, and a first vertical portion of the sacrificial spacer layer in the opening and on sidewalls of the dielectric layer is left to form a first ring;
forming a second conductive feature in the opening, wherein the second conductive feature is encircled by the first ring, and is over and electrically coupled to the first conductive feature;
removing at least a portion of the first ring to form an air spacer; and
forming a metal capping layer over the second conductive feature, wherein the metal capping layer comprises an extension portion extending into the air spacer.
2. The method of claim 1 , wherein the sacrificial spacer layer is deposited as a conformal layer.
3. The method of claim 1 , wherein the first ring is removed after the metal capping layer is formed.
4. The method of claim 1 , wherein the forming the second conductive feature comprises forming a contact plug.
5. The method of claim 1 , wherein the forming the second conductive feature comprises forming a metal line.
6. The method of claim 1 , wherein the sidewalls of the dielectric layer facing the opening are substantially straight and extend from a top surface to a bottom surface of the dielectric layer.
7. The method of claim 1 , wherein the opening comprises a trench and a via opening underlying the trench, and the first ring is in the trench, and the patterning the sacrificial spacer layer further forms a second ring in the via opening.
8. The method of claim 7 further comprising depositing an etch stop layer over the second conductive feature, wherein at a time after the etch stop layer is deposited, the second ring remains.
9. The method of claim 1 further comprising forming an additional dielectric layer over the sacrificial spacer layer and sealing the air spacer, wherein a residue portion of the first ring is left underlying the additional dielectric layer.
10. The method of claim 1 , wherein the first ring is fully removed.
11. A method comprising:
depositing a first etch stop layer over a first conductive feature;
depositing a dielectric layer over the first etch stop layer;
forming a second conductive feature in the dielectric layer and the first etch stop layer, wherein the second conductive feature is over and contacting the first conductive feature;
forming an air spacer encircling the second conductive feature, wherein at least middle portions of sidewalls of the second conductive feature are exposed to the air spacer;
forming a metal cap on the second conductive feature, wherein an extension portion of the metal cap is in the air spacer; and
after the metal cap is formed, depositing a second etch stop layer over and contacting the dielectric layer, wherein the second etch stop layer is further over the second conductive feature, with a bottom surface of the second etch stop layer being exposed to the air spacer.
12. The method of claim 11 , wherein a finishing time of forming the air spacer is after the second conductive feature has been formed.
13. The method of claim 11 , wherein the forming the air spacer comprises:
forming a sacrificial spacer, wherein at a time after both of the sacrificial spacer and the second conductive feature are formed, the second conductive feature is encircled by the sacrificial spacer; and
removing the sacrificial spacer to form the air spacer.
14. The method of claim 13 , wherein the sacrificial spacer is formed before the second conductive feature is formed.
15. The method of claim 11 , wherein the air spacer penetrates through the first etch stop layer.
16. The method of claim 11 , wherein no dielectric material is between the second conductive feature and the air spacer.
17. A method comprising:
forming a first conductive feature;
forming a second conductive feature over and electrically coupling to the first conductive feature, wherein the second conductive feature comprises:
a diffusion barrier; and
a metallic material in a basin formed by the diffusion barrier; and
removing at least a portion of a sacrificial layer encircling the second conductive feature to form an air spacer encircling at least a top portion of the second conductive feature; and
forming a metal cap over the second conductive feature, wherein a portion of the metal cap is exposed to the air spacer.
18. The method of claim 17 , wherein the sacrificial layer is fully removed, and an entire outer sidewall of the second conductive feature is exposed to the air spacer.
19. The method of claim 17 , wherein the sacrificial layer is partially removed, and a first bottom of the air spacer is higher than a second bottom of the second conductive feature.
20. The method of claim 17 , wherein a portion of the metal cap comprises a lower portion lower than a top surface of the metal cap.