Memory device and method of forming thereof

1. A memory cell comprising:

a thin film transistor over a semiconductor substrate, the thin film transistor comprising:

a memory film contacting a word line;

an oxide semiconductor (OS) layer contacting a source line and a bit line, wherein the memory film is disposed between the OS layer and the word line, wherein the memory film is in direct contact with the OS layer; and

a conductive feature interposed between the memory film and the OS layer; and

a dielectric material covering sidewalls of the source line, the memory film, and the OS layer.

2. The memory cell of claim 1 , wherein the memory film covers a top surface of the conductive feature.

3. The memory cell of claim 2 , wherein the memory film further covers a first sidewall and a bottom surface of the conductive feature, and wherein a second sidewall of the conductive feature opposite the first sidewall is covered by the OS layer.

4. The memory cell of claim 2 , wherein the memory film has a first thickness measured across a first portion of the memory film covering the top surface of the conductive feature, the memory film has a second thickness measured across a second portion of the memory film interposed between the conductive feature and the word line, and the first thickness is less than the second thickness.

5. The memory cell of claim 1 , further comprising a dielectric layer contacting the word line and the memory film.

6. The memory cell of claim 5 , wherein the dielectric layer covers a surface of the dielectric material.

7. The memory cell of claim 5 , wherein the OS layer covers a sidewall of the dielectric layer.

8. The memory cell of claim 1 , wherein the dielectric material covers a sidewall of the conductive feature.

9. A device comprising:

a semiconductor substrate;

a first memory cell over the semiconductor substrate, the first memory cell comprising a first thin film transistor, wherein the first thin film transistor comprises:

a gate electrode provided by a portion of a first word line;

a first portion of a ferroelectric material, a first sidewall of the first portion of the ferroelectric material contacting the gate electrode;

a first conductive feature on a second sidewall of the first portion of the ferroelectric material, the second sidewall being opposite the first sidewall; and

an oxide semiconductor (OS) layer comprising a first channel region, the first channel region being on a sidewall of the first conductive feature;

a source line, wherein a first portion of the source line provides a first source/drain electrode for the first thin film transistor;

a bit line, wherein a first portion of the bit line provides a second source/drain electrode for the first thin film transistor;

a first dielectric material extending across sidewalls of the bit line, the first portion of the ferroelectric material, and the OS layer;

a second memory cell over the first memory cell; and

a second dielectric material interposed between the first memory cell and the second memory cell, wherein the first conductive feature is separated from the second dielectric material by the ferroelectric material.

10. The device of claim 9 , wherein a second portion of the ferroelectric material directly contacts the first channel region.

11. The device of claim 10 , wherein the second portion of the ferroelectric material is interposed between the OS layer and the second dielectric material.

12. The device of claim 9 , wherein the second dielectric material directly contacts the OS layer.

13. The device of claim 9 , wherein the gate electrode directly contacts the second dielectric material.

14. The device of claim 9 , wherein the first conductive feature is surrounded by the ferroelectric material and the OS layer in a cross-section view.

15. A method comprising:

forming a multi-layer stack on a semiconductor substrate, the multi-layer stack comprising alternating conductive layers and dielectric layers, wherein a first trench extends through the multi-layer stack;

recessing the conductive layers from sidewalls of the dielectric layers to form first recesses connected to the first trench;

depositing a memory film in the first trench and the first recesses, the memory film covering sidewalls of the conductive layers in the first recesses;

forming conductive features, wherein forming the conductive features comprises filling remaining portions of the first recesses with a conductive material;

depositing an oxide semiconductor (OS) layer over the conductive features and the memory film, the OS layer extending along sidewalls and a bottom surface of the first trench; and

forming a second trench through the conductive features and the dielectric layers; and

depositing a dielectric material to fill the second trench.

16. The method of claim 15 , wherein forming the conductive features comprises:

depositing the conductive material over the memory film, the conductive material filling the remaining portions of the first recesses; and

removing a portion of the conductive material along the memory film opposite sidewalls of the dielectric layers with an etch back.

17. The method of claim 16 , further comprising removing portions of the memory film along sidewalls of the dielectric layers.

18. The memory cell of claim 5 , wherein the dielectric layer is separated from the conductive feature by the memory film.

19. The device of claim 9 , wherein the first conductive feature is separated from the gate electrode by a third portion of the ferroelectric material with a first thickness, wherein the first conductive feature is separated from the second dielectric material by a fourth portion of the ferroelectric material with a second thickness, and wherein the first thickness is larger than the second thickness.

20. The method of claim 15 , wherein the dielectric layers are separated from the conductive features by the memory film.