Method of forming a transistor device with a gate structure having a pair of recess regions and a resistive protection layer within
A method to form a transistor device with a recessed gate structure is provided. In one embodiment, a gate structure is formed overlying a device region and an isolation structure. The gate structure separates a device doping well along a first direction with a pair of recess regions disposed on opposite sides of the device region in a second direction perpendicular to the first direction. A pair of source/drain regions in is formed the device region on opposite sides of the gate structure. A sidewall spacer is formed extending along sidewalls of the gate structure, where a top surface of the sidewall spacer is substantially flush with the top surface of the gate structure. A resistive protection layer is then formed on the sidewall spacer and covering the pair of recess regions.
1. A method of forming a transistor device, comprising:
forming an isolation structure in a semiconductor substrate enclosing a device region;
forming a device doping well in the device region;
forming a gate structure overlying the device region and the isolation structure, wherein the gate structure separates the device doping well along a first direction and comprises a pair of recess regions disposed on opposite sides of the device region in a second direction perpendicular to the first direction;
forming a pair of source/drain regions in the device region on opposite sides of the gate structure;
forming a sidewall spacer extending along sidewalls of the gate structure, where a top surface of the sidewall spacer is substantially flush with the top surface of the gate structure; and
forming a resistive protection layer conformally covering top and sidewall surfaces of the sidewall spacer within the pair of recess regions.
2. The method according to claim 1 , wherein the pair of recess regions is formed overlying an interface region of the isolation structure and the device region.
3. The method according to claim 2 , wherein the resistive protection layer is formed directly contacting a top surface of the interface region.
4. The method according to claim 1 ,
wherein a channel region is formed in the device region underneath the gate structure, wherein the channel region has a channel width extending in the second direction from boundaries of one of the pair of recess regions to the other one of the pair of recess regions,
wherein the pair of source/drain regions respectively has a width in the second direction greater than the channel width.
5. The method according to claim 4 , wherein the channel width is smaller than a device width of the device doping well.
6. The method according to claim 1 , wherein the gate structure is formed to include a pair of peripheral gate segments on opposite sides of the pair of recess regions in the first direction.
7. The method according to claim 1 , wherein the pair of recess regions is formed with a concave curved perimeter lined with the sidewall spacer and extending to an outermost sidewall of the gate structure.
8. The method according to claim 1 , wherein the resistive protection layer has a bottom surface coplanar with a bottom surface of the gate structure.
9. The method according to claim 8 , wherein the isolation structure is made of silicon dioxide and extends into a top of the semiconductor substrate and demarcating the device region of the semiconductor substrate.
10. The method according to claim 1 , wherein the gate structure is formed to include a gate electrode on a gate dielectric layer; and wherein the gate dielectric layer has sidewalls vertically flushed with sidewalls of the gate electrode.
11. A method of forming a transistor device, comprising:
forming an isolation structure in a semiconductor substrate surrounding a device region;
forming a gate structure on the device region with a gate dielectric layer separating a gate electrode from the device region, wherein the gate structure is formed with a pair of recess regions respectively overly an interface region of the isolation structure and the device region, wherein the gate electrode forms an ‘H’ shape when viewed on a face of the gate structure; and
forming a sidewall spacer outlining the ‘H’ shape, extending from the isolation structure up to a top surface that is flush with a top surface of the gate structure; and
forming a pair of source/drain regions in the device region on opposite sides of the gate structure and laterally spaced apart by a channel region, wherein the channel region has a channel length extending along a first direction from one of the pair of source/drain regions to the other one of the pair of source/drain regions, wherein the channel region has a channel width extending along a second direction perpendicular to the first direction from one of the pair of recess regions to the other one of the pair of recess regions; and
forming a resistive protection layer within the pair of recess regions and extending conformally to cover a portion of a top surface of the gate electrode while leaving a remaining portion of the top surface of the gate electrode uncovered by the resistive protection layer.
12. The method according to claim 11 , wherein the resistive protection layer extends along a sidewall of the sidewall spacer and has a bottom surface coplanar with a bottom surface of the gate structure.
13. The method according to claim 12 , wherein the resistive protection layer further extends laterally on the top surface of the sidewall spacer.
14. The method according to claim 13 , wherein the resistive protection layer has a bottom surface that is laterally flush with a bottom surface of the sidewall spacer.
15. The method according to claim 11 , further comprising:
forming a
silicide layer on the remaining portion of the top surface of the gate electrode, wherein the silicide layer is absent from the portion of the top surface of the gate electrode covered by the resistive protection layer.
16. The method according to claim 11 , wherein the resistive protection layer has an ending sidewall disposed on an upper surface of the gate structure.
17. The method according to claim 11 , wherein the pair of recess regions is formed on opposite sides of the channel region in the second direction.
18. The method according to claim 11 , wherein the pair of recess regions is formed with a rectangular shape.
19. A method for manufacturing a transistor device, the method comprising:
forming an isolation structure in a semiconductor substrate, wherein the isolation structure demarcates a device region of the semiconductor substrate;
forming a gate structure overlying the device region of the semiconductor substrate, wherein the gate structure is formed with a pair of recess regions overlying an interface region of the isolation structure and the device region;
performing a doping process to the device region of the semiconductor substrate with the gate structure in place to form a pair of source/drain regions in the device region;
forming a sidewall spacer extending along sidewalls of the gate structure; and
conformally forming a resistive protection layer within the pair of recess regions, extending upwardly along a sidewall of the sidewall spacer, and further extending laterally along top surfaces of the sidewall spacer and the gate structure.
20. The method according to claim 19 , further comprising:
forming a silicide layer on the pair of source/drain regions and at least a portion of the gate structure not covered by the resistive protection layer,
wherein the sidewall spacer has a top surface coplanar with a top surface of the gate structure.