IP Library › Granted Patent US 12,177,962
Granted Patent B2
US 12,177,962 · App. 17/928,356 · Granted Dec 24, 2024

Insulating resin circuit substrate

Inventors: Yoshiaki Sakaniwa (Saitama, JP); Toyo Ohashi (Saitama, JP)
Assignee: MITSUBISHI MATERIALS CORPORATION
H05K1/0209H05K1/0313H05K3/0061H05K2201/0154H05K2201/10227
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Quick Facts
Patent No.
US 12,177,962
App. No.
17/928,356
Granted
Dec 24, 2024
Kind
B2
Abstract

There is provided an insulating resin circuit substrate including an insulating resin layer and a circuit layer consisting of a plurality of metal pieces disposed to be spaced apart in a circuit pattern shape on one surface of the insulating resin layer, in which in a case where a surface of the insulating resin layer in a gap between the metal pieces is analyzed by SEM-EDX, the area rate of a metal element constituting the metal pieces is less than 2.5%.

Claims (21)

1. An insulating resin circuit substrate comprising:

an insulating resin layer;

a circuit layer consisting of a plurality of metal pieces disposed to be spaced apart in a circuit pattern shape on one surface of the insulating resin layer; and

a heat radiation layer is formed on a surface of the insulating resin layer on a side opposite to the circuit layer,

wherein in a case where a surface of the insulating resin layer in a gap between the metal pieces is analyzed by SEM-EDX, an area rate of a metal element constituting the metal pieces is less than 2.5%,

the insulating resin layer prevents the electrical connection between the circuit layer and the heat radiation layer,

in a region of the heat radiation layer, a joining rate of the insulating resin layer to the heat radiation layer is 70% or more, where the region is located on a back surface of the gap between the metal pieces of the circuit layer, and

the heat radiation layer is made of a material having a thermal conductivity higher than a thermal conductivity of the insulating resin layer.

2. The insulating resin circuit substrate according to claim 1 ,

wherein the metal piece has a thickness t of 0.5 mm or more.

3. The insulating resin circuit substrate according to claim 1 ,

wherein a ratio L/t of a closest distance L between the metal pieces to a thickness t of the metal piece disposed in the circuit pattern shape is 2.0 or less.

4. The insulating resin circuit substrate according to claim 1 ,

wherein the insulating resin layer consist of a thermosetting resin having insulating properties and one or more fillers selected from a group consisting of alumina, boron nitride, and aluminum nitride.

5. The insulating resin circuit substrate according to claim 1 ,

wherein the plurality of metal pieces consists of one material selected from a group consisting of an oxygen-free copper, a tough pitch copper, and a copper alloy.

6. The insulating resin circuit substrate according to claim 1 ,

wherein each of the plurality of metal pieces is composed of a punched metal plate.

7. The insulating resin circuit substrate according to claim 1 ,

wherein a closest distance L between the metal pieces disposed in a circuit pattern shape is set such that a ratio L/t to a thickness t of the metal pieces is 2.0 or less.

8. The insulating resin circuit substrate according to claim 7 , wherein the ratio L/t is 1.0 or less.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 29, 2022
From: SAKANIWA, YOSHIAKI; OHASHI, TOYO
To: MITSUBISHI MATERIALS CORPORATION
Reel/Frame 061906/0736 →
Priority Claims (1)
JP 2020-095304 · Jun 1, 2020 · national
Continuity (1)
Related Publication 20230319975A1 · Oct 5, 2023