Fluorine passivation in a pixel sensor
View Patent ↗Implementations described herein reduce electron-hole pair generation due to silicon dangling bonds in pixel sensors. In some implementations, the silicon dangling bonds in a pixel sensor may be passivated by silicon-fluorine (Si—F) bonding in various portions of the pixel sensor such as a transfer gate contact via or a shallow trench isolation region, among other examples. The silicon-fluorine bonds are formed by fluorine implantation and/or another type of semiconductor processing operation. In some implementations, the silicon-fluorine bonds are formed as part of a cleaning operation using fluorine (F) such that the fluorine may bond with the silicon of the pixel sensor. Additionally, or alternatively, the silicon-fluorine bonds are formed as part of a doping operation in which boron (B) and/or another p-type doping element is used with fluorine such that the fluorine may bond with the silicon of the pixel sensor.
1. A method, comprising:
forming a drain region and a drain extension region in a substrate of a pixel sensor;
forming an opening in the substrate;
performing a surface treatment operation to form a first plurality of silicon-fluorine bonds along a bottom surface of the opening and along sidewalls of the opening; and
forming a transfer gate contact in the opening after performing the surface treatment operation,
wherein, in a cross-section view of the pixel sensor:
the drain region extends beyond the transfer gate contact in the substrate, and
the drain extension region and the transfer gate contact extend to a same depth in the substrate.
2. The method of claim 1 , wherein performing the surface treatment operation comprises:
performing a cleaning operation using fluorine.
3. The method of claim 1 , wherein performing the surface treatment operation comprises:
performing a fluorine implantation operation before formation of an oxide liner in the opening.
4. The method of claim 1 , wherein a fluorine concentration at the bottom surface is greater relative to a fluorine concentration at the sidewalls.
5. The method of claim 1 , wherein performing the surface treatment operation comprises:
performing a fluorine implantation operation during implantation of a p-type material in the opening.
6. The method of claim 1 , wherein the surface treatment operation is a first surface treatment operation, and
wherein the method further comprises:
forming a shallow trench isolation (STI) structure in the substrate; and
performing a second surface treatment operation to form a second plurality of silicon-fluorine bonds at an interface between the STI structure and the substrate.
7. The method of claim 6 , wherein performing the second surface treatment operation comprises:
performing a fluorine implantation operation before filling the STI structure with an oxide material.
8. The method of claim 6 , wherein performing the second surface treatment operation comprises:
performing a fluorine implantation operation during implantation of a p-type material in the STI structure.
9. A method, comprising:
forming a drain region and a drain extension region in a substrate of a pixel sensor, wherein the drain extension region is adjacent to the drain region;
forming a photodiode region in the substrate;
forming a floating diffusion region in the substrate;
forming a transfer gate contact in the substrate between the photodiode region and the floating diffusion region,
wherein, in a cross-section view of the pixel sensor:
the drain extension region of the pixel sensor extends beyond the transfer gate contact in the substrate, and
the drain extension region and the transfer gate contact extend to a same depth in the substrate; and
forming a first plurality of silicon-fluorine bonds at an interface between the transfer gate contact and the substrate.
10. The method of claim 9 , wherein an angle between a bottom surface of the transfer gate contact and a sidewall of the transfer gate contact is in a range of approximately 70 degrees to approximately 90 degrees.
11. The method of claim 9 , wherein a ratio between a depth of the transfer gate contact to a width of the transfer gate contact is in a range of approximately 3 to approximately 6.
12. The method of claim 9 , further comprising:
forming a shallow trench isolation (STI) structure adjacent to the floating diffusion region; and
forming a second plurality of silicon-fluorine bonds located at an interface between the STI structure and the substrate.
13. The method of claim 9 , wherein a ratio of a concentration of fluorine located at the interface to a concentration of boron located at the interface is based on a threshold voltage associated with the transfer gate contact and a saturation current associated with the floating diffusion region.
14. The method of claim 9 , wherein a size of the pixel sensor is in a range of approximately 0.1 micrometers (μm) to 1.0 μm.
15. The method of claim 9 , further comprising:
forming an oxide layer between the interface and the transfer gate contact.
16. The method of claim 15 , wherein a thickness of the oxide layer is in a range of approximately 1 Ångström to approximately 96 Ångströms.
17. A method of forming a pixel sensor, comprising:
forming an oxide layer that lines a trench of a substrate and that contacts a floating diffusion region, wherein a bottom surface of the trench and sidewalls of the trench include a plurality of silicon-fluorine bonds, wherein:
the floating diffusion region includes a drain region and a drain extension region, wherein the drain extension region is adjacent to the drain extension region, and
in a cross-section view of the pixel sensor:
the drain extension region of the pixel sensor extends beyond the trench in the substrate, and
the drain extension region and the trench extend to a same depth in the substrate; and
forming a polysilicon layer in the trench.
18. The method of claim 17 , wherein a fluorine concentration associated with the trench is in a range of approximately 1011 ions per square centimeter (cm2) to approximately 1013 ions per cm2.
19. The method of claim 17 , wherein a bottom surface and sidewalls of the trench are implanted with boron atoms.
20. The method of claim 17 , wherein the silicon-fluorine bonds are located within a range of approximately 0 nanometers (nm) to approximately 500 nm beneath a surface of the trench.