IP Library Granted Patent US 12,188,839
Granted Patent B2
US 12,188,839 · App. 18/304,989 · Granted Jan 7, 2025

Sensor device including sensor unit for a gaseous medium

Inventors: Rainer Leuschner (Regensburg, DE); Kerstin Kaemmer (Radebeul, DE); Roland Meier (Regensburg, DE); Marten Oldsen (Anzing, DE); Karolina Zogal (Regensburg, DE)
Assignee: Infineon Technologies AG
G01L9/0073G01L9/0042G01N33/0027
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Quick Facts
Patent No.
US 12,188,839
App. No.
18/304,989
Granted
Jan 7, 2025
Kind
B2
Abstract

A sensor device includes a sensor unit sensitive for a property of a gaseous medium. The sensor unit is formed on a first surface of a sensor substrate. A frame structure on the first surface includes a first loop portion laterally surrounding a first area that includes the sensor unit. A communicating channel accesses the first area through at least one of a lateral port in the first loop portion and a base port in the sensor substrate. A lid structure completely covers the frame structure and the first area.

Claims (33)

1. A method of manufacturing a sensor device, the method comprising:

forming a sensor unit sensitive for a property of a gaseous medium on a front surface of a semiconductor substrate;

forming a frame structure on the front surface, wherein the frame structure comprises a first loop portion laterally surrounding a first area comprising the sensor unit, a second loop portion laterally surrounding a second area, and a connection portion connecting the first loop portion with the second loop portion to form a communicating channel between the first and second areas;

forming a lid structure on the frame structure; and

forming, in the lid structure, a lid opening exposing the second area.

2. The method according to claim 1 , wherein the lid structure is formed spaced from a sensitive surface of the sensor unit sensitive to the property of the gaseous medium.

3. The method according to claim 1 , wherein forming the frame structure comprises depositing a photoresist layer and patterning the photoresist layer to form the frame structure from an exposed section of the photoresist layer.

4. The method according to claim 1 , wherein forming the lid structure comprises:

attaching a photoresist laminate to an exposed upper edge of the frame structure; and

patterning the photoresist laminate to form a preparatory lid structure without any lid opening exposing the second area.

5. The method according to claim 4 , wherein forming the lid structure comprises performing a laser treatment of the preparatory lid structure to form the lid opening.

6. The method according to claim 4 , further comprising forming a reflective structure in the second area before forming the lid structure.

7. The method according to claim 4 , further comprising forming an auxiliary lid selectively in a first portion of the second area, wherein the auxiliary lid is connected to the frame structure and spaced from the front surface.

8. The method according to claim 7 , wherein

the auxiliary lid is formed from a further portion of a photoresist layer forming the frame structure and exposure of the further portion of the photoresist layer to form the auxiliary lid is effective only in a vertical section of the photoresist layer.

9. The method according to claim 7 , wherein the lid opening is formed to expose a portion of the auxiliary lid during formation of the lid structure.

10. The method according to claim 9 , wherein forming the lid opening comprises forming an auxiliary lid opening in a vertical projection of the lid opening in the lid structure.

11. A sensor device comprising:

a sensor unit sensitive for a property of a gaseous medium disposed on a front surface of a semiconductor substrate;

a frame structure disposed on the front surface, wherein the frame structure comprises a first loop portion laterally surrounding a first area comprising the sensor unit, a second loop portion laterally surrounding a second area, and a connection portion connecting the first loop portion with the second loop portion to form a communicating channel between the first and second areas; and

a lid structure disposed on the frame structure, the lid structure comprising a lid opening exposing the second area.

12. The sensor device of claim 11 , wherein the lid structure is spaced from a sensitive surface of the sensor unit sensitive to the property of the gaseous medium.

13. The sensor device of claim 11 , wherein the second area comprises a reflective structure.

14. The sensor device of claim 11 , wherein the sensor unit comprises selective receptor sites sensitive a to one or more species of molecules.

15. A sensor device comprising:

a sensor box encasing a first area that comprises a sensor unit sensitive for a property of a gaseous medium, wherein the sensor unit is formed on a first surface of a sensor substrate and the sensor box comprises a lateral port;

an inlet box adjacent to the sensor box, partially encasing a second area and comprising a lid opening opposite to the first surface; and

a conduit comprising a communicating channel formed on the first surface and extending from the lateral port of the sensor box to a lateral port of the second area.

16. The sensor device of claim 15 , further comprising a reflective structure disposed on the first surface of the sensor substrate within the second area.

17. The sensor device of claim 15 , wherein the sensor unit comprises at least one suspended membrane.

18. The sensor device of claim 17 , wherein the at least one suspended membrane spans across a hermetically closed cavity.

19. The sensor device of claim 15 , wherein the sensor device further comprises an outlet box partially encasing a third area, wherein the communicating channel further extends from the sensor box to the outlet box.

20. The sensor device of claim 15 , wherein the sensor box, the inlet box, and the conduit are made of a photoresist material.

Priority Claims (1)
DE 102016121683.6 · Nov 11, 2016 · national
Continuity (3)
Division 17024228 · Sep 17, 2020
Division 15808044 · Nov 9, 2017
Related Publication 20230251154A1 · Aug 10, 2023
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