IP Library Granted Patent US 12,191,283
Granted Patent B2
US 12,191,283 · App. 17/751,692 · Granted Jan 7, 2025

Manufacturing method of three-dimensional stacking structure

Inventors: Hsien-Wei Chen (Hsinchu, TW); Jie Chen (New Taipei, TW); Ming-Fa Chen (Taichung, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
H01L25/0657H01L21/561H01L21/565H01L21/78H01L24/06H01L24/08H01L24/80H01L25/50H01L2224/06519H01L2224/08145H01L2224/80895H01L2224/80896H01L2225/06524H01L2225/06541H01L2225/06586H01L2225/06589
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Quick Facts
Patent No.
US 12,191,283
App. No.
17/751,692
Granted
Jan 7, 2025
Kind
B2
Abstract

A stacking structure including a first die, a second die stacked on the first die, and a filling material is provided. The first die has a first bonding structure, and the first bonding structure includes first bonding pads and a first heat dissipating element. The second die has a second bonding structure, and the second bonding structure includes second bonding pads and a second heat dissipating element. The first bonding pads are bonded with the second bonding pads. The first heat dissipating element is connected to one first bonding pad of the first bonding pads and the second heat dissipating element is connected to one second bonding pad of the second bonding pads. The filling material is disposed over the first die and laterally around the second die. The first and second dies are bonded through the first and second bonding structures.

Claims (34)

1. A method for forming stacking structures, comprising:

providing a first substrate with first bonding structures, wherein the first bonding structure includes a first bonding film, first bonding pads embedded in the first bonding film and a first heat dissipating element;

providing second dies onto the first substrate, each second die having a second bonding structure, wherein the second bonding structure includes a second bonding film, second bonding pads embedded in the second bonding film and a second heat dissipating element;

bonding the second dies with the first substrate through bonding the first and second bonding structures, wherein the first and second heat dissipating elements are electrically floating; and

performing a dicing process to cut through the first substrate to form the stacking structures.

2. The method of claim 1 , further comprising forming a filling material over the first substrate and covering the second dies.

3. The method of claim 2 , wherein forming a filling material over the first substrate and covering the second dies comprises performing a molding process to form the filling material on the first substrate and performing a planarization process to partially remove the filling material so that the filling material laterally wraps the second dies.

4. The method of claim 2 , wherein performing the dicing process includes cutting through the filling material and the first substrate without cutting through the second dies to separate the stacking structures.

5. The method of claim 2 , further comprising forming a redistribution layer on the second dies and the filling material.

6. The method of claim 1 , wherein bonding the second dies onto the first substrate comprises performing a heating process.

7. The method of claim 1 , wherein bonding the second dies onto the first substrate through bonding the first and second bonding structures includes bonding the second bonding pads with the first bonding pads.

8. The method of claim 1 , wherein one first bonding pad of the first bonding pads is connected with the first heat dissipating element and one second bonding pad of the second bonding pads is connected with the second heat dissipating element, and the one first bonding pad and the one second bonding pad are electrically floating.

9. A method for forming stacking structures, comprising:

providing a first substrate having first dies, each first die having a first bonding structures, wherein the first bonding structure includes a first bonding film, first bonding pads embedded in the first bonding film and a first heat dissipating element;

providing second dies, each second die having a second bonding structure, wherein the second bonding structure includes a second bonding film, second bonding pads embedded in the second bonding film and a second heat dissipating element;

bonding the second dies with the first substrate through the first and second bonding structures, wherein the first dies and the second dies are electrically connected and the first and second heat dissipating elements are electrically floating;

forming a filling material over the first substrate and covering the second dies; and

performing a singulation process to cut through the filling material and the first substrate to form the stacking structures.

10. The method of claim 9 , wherein the filling material is formed over the first substrate and is in contact with one first bonding pad that is connected with the first heat dissipating element.

11. The method of claim 9 , wherein bonding the second dies onto the first substrate through the first and second bonding structures includes bonding one first bonding pad that is connected with the first heat dissipating element with one second bonding pad that is connected with the second heat dissipating element.

12. The method of claim 9 , wherein bonding the second dies onto the first substrate through the first and second bonding structures includes bonding one first bonding pad that is connected with the first heat dissipating element with one second bonding pad that is unconnected with the second heat dissipating element.

13. The method of claim 9 , wherein bonding the second dies onto the first substrate through the first and second bonding structures includes bonding one second bonding pad that is connected with the second heat dissipating element with one first bonding pad that is unconnected with the first heat dissipating element.

14. The method of claim 9 , wherein bonding the second dies onto the first substrate through the first and second bonding structures includes bonding the first and second bonding films and bonding the first and second bonding pads so that a bonding interface is located between the first and second bonding film and the first and second bonding pads.

15. The method of claim 9 , further comprising forming a redistribution layer on the second dies and the filling material and forming conductive terminals on the redistribution layer.

16. A method for forming stacking structures, comprising:

providing a first substrate having a bonding region and a non-bonding region, wherein the first substrate includes first bonding structures, the first bonding structure includes a first bonding film, first bonding pads embedded in the first bonding film and a first heat dissipating element;

providing second dies onto the bonding region of the first substrate, wherein each second die has a second bonding structure, and the second bonding structure includes a second bonding film, second bonding pads embedded in the second bonding film and a second heat dissipating element;

bonding the second dies with the first substrate through bonding the first and second bonding pads of the first and second bonding structures, wherein the first and second heat dissipating elements are electrically floating;

forming a filling material in the non-bonding region on the first substrate and covering the second dies; and

performing a dicing process to cut through the filling material and the first substrate to form the stacking structures.

17. The method of claim 16 , wherein the first bonding structures include a third heat dissipating element located in the bonding region, and the third heat dissipating element is connected to one first bonding pad of the first bonding pads.

18. The method of claim 17 , wherein the one first bonding pad that is connected with the third heat dissipating element is in contact with the one second bonding pad that is connected with the second heat dissipating element.

19. The method of claim 16 , wherein the filling material is formed in the non-bonding region on the first substrate and is in contact with some of the first bonding pads.

20. The method of claim 16 , wherein the filling material is formed in the non-bonding region on the first substrate and is in contact with one first bonding pad that is connected with the first heat dissipating element.

Continuity (3)
Division 16916060 · Jun 29, 2020
Provisional Application 62892568 · Aug 28, 2019
Related Publication 20220285324A1 · Sep 8, 2022
References Cited (3)
US 20140054761A1 · Lin · 2014 [cited by examiner]
US 20200105600A1 · Lu · 2020 [cited by examiner]
US 20210225790A1 · Chen · 2021 [cited by examiner]