Electronic device
An electronic device includes a base layer and a display element layer including a pixel definition layer having an opening defined therethrough, a light emitting element, and a light receiving element. Each of the light emitting element and the light receiving element includes a first electrode, a hole transport region disposed on the first electrode, an electron transport region disposed on the hole transport region, and a second electrode disposed on the electron transport region. The light emitting element includes a light emitting layer disposed between the hole transport region and the electron transport region. The light receiving element includes a light receiving layer disposed between the hole transport region and the electron transport region and an electron extraction layer, including an n-dopant material, disposed between the light receiving layer and the electron transport region. The light receiving element converts a light incident thereto into an electrical signal.
1. An electronic device, comprising:
a base layer; and
a display element layer disposed on the base layer and comprising a pixel definition layer including an opening therethrough, a light emitting element, and a light receiving element distinguished from the light emitting element by the pixel definition layer, each of the light emitting element and the light receiving element comprising:
a first electrode;
a hole transport region disposed on the first electrode;
an electron transport region disposed on the hole transport region; and
a second electrode disposed on the electron transport region,
wherein the light emitting element comprises a light emitting layer disposed between the hole transport region and the electron transport region, and
wherein the light receiving element comprises:
a light receiving layer disposed between the hole transport region and the electron transport region, the light receiving layer configured to convert a light incident thereto into an electrical signal;
an electron extraction layer disposed between the light receiving layer and the electron transport region, the electron extraction layer comprising an n-dopant material,
wherein the n-dopant material comprises a metal having a work function equal to or smaller than about 3.0 eV, or an organic compound having a highest energy occupied molecular orbital (HOMO) level equal to or greater than about −3.0 eV.
2. The electronic device of claim 1 , wherein the n-dopant material comprises Ca, Yb, K, Cs, Rb, and/or Li.
3. The electronic device of claim 1 , wherein the electron extraction layer is not disposed within the light emitting element.
4. The electronic device of claim 1 , wherein the electron transport region comprises:
an electron transport layer; and
an electron injection layer disposed between the electron transport layer and the second electrode,
wherein the n-dopant material is not present within the electron transport layer.
5. The electronic device of claim 1 , wherein the light receiving layer comprises a donor compound and an acceptor compound, and the acceptor compound comprises a fullerene derivative or a perylene tetracarboxylic diimide (PTCDI) derivative.
6. The electronic device of claim 5 , wherein the electron extraction layer comprises the n-dopant material and the acceptor compound.
7. The electronic device of claim 5 , wherein the electron extraction layer is a layer of a single material comprising the n-dopant material or a layer of a composite material comprising the n-dopant material and the acceptor compound.
8. The electronic device of claim 5 , wherein the donor compound comprises a phthalocyanine-based compound or a perylene-based compound.
9. The electronic device of claim 1 , wherein the display element layer further comprises a buffer layer disposed between the light emitting layer and the electron transport region and between the electron extraction layer and the electron transport region.
10. The electronic device of claim 9 , wherein the n-dopant material is not present within the buffer layer.
11. The electronic device of claim 1 , wherein the hole transport region disposed under the light receiving layer comprises a same material as the hole transport region disposed under the light emitting layer.
12. The electronic device of claim 1 , wherein the electron transport region disposed on the light receiving layer comprises a same material as the electron transport region disposed on the light emitting layer.
13. An electronic device, comprising:
a display module comprising a red-light emitting area, a green-light emitting area, a blue-light emitting area, and a light receiving area, which are spaced apart from each other, the display module further comprising:
a base layer;
a display element layer disposed on the base layer and comprising a light emitting element and a light receiving element; and
an input sensing layer disposed on the display element layer,
wherein the display element layer further comprises:
a first electrode;
a hole transport region disposed on the first electrode;
an electron transport region disposed on the hole transport region; and
a second electrode disposed on the electron transport region,
wherein the light emitting element comprises a light emitting layer disposed between the hole transport region and the electron transport region,
wherein the light receiving element comprises a light receiving layer disposed between the hole transport region and the electron transport region and an electron extraction layer disposed on the light receiving layer, and
wherein the electron extraction layer and light emitting layer do not overlap one another.
14. The electronic device of claim 13 , wherein the electron extraction layer comprises an n-dopant material.
15. The electronic device of claim 14 , wherein the electron extraction layer comprises a metal having a work function equal to or smaller than about 3.0 eV, a metal compound comprising a metal having a work function equal to or smaller than 3.0 eV, an organic compound having a highest energy occupied molecular orbital (HOMO) level equal to or greater than about −3.0 eV, or a composite compound comprising an organic material having a HOMO level equal to or greater than about −3.0 eV.
16. The electronic device of claim 14 , wherein the electron transport region comprises:
an electron transport layer; and
an electron injection layer disposed between the electron transport layer and the second electrode,
wherein the n-dopant material is not present within the electron transport layer.
17. The electronic device of claim 14 , wherein the light receiving layer comprises a donor compound and an acceptor compound, and the acceptor compound comprises a fullerene derivative or a perylene tetracarboxylic diimide (PTCDI) derivative.
18. The electronic device of claim 17 , wherein the electron extraction layer comprises only the n-dopant material or comprises the n-dopant material and the acceptor compound.
19. The electronic device of claim 13 , wherein the light emitting element comprises:
a red-light emitting element corresponding to the red-light emitting area;
a blue-light emitting element corresponding to the blue-light emitting area; and
a green-light emitting element corresponding to the green-light emitting area.
20. An electronic device, comprising:
a base layer;
a first electrode disposed on the base layer and comprising a light emitting electrode and a light receiving electrode spaced apart from the light emitting electrode;
a pixel definition layer disposed on the base layer and including with first and second openings through which the light emitting electrode and the light receiving electrode are exposed, respectively;
a light emitting layer disposed on the light emitting electrode within the first opening;
a light receiving layer disposed on the light receiving electrode within the second opening;
an electron extraction layer disposed on the light receiving layer within the second opening, the electron extraction layer comprises Ca, Yb, K, Cs, Rb, and/or Li;
a hole transport region disposed between the light emitting electrode and the light emitting layer and between the light receiving electrode and the light receiving layer;
an electron transport region entirely overlapping each of the pixel definition layer, the light emitting layer, and the light receiving layer;
a second electrode disposed on the electron transport region; and
an encapsulation layer disposed on the second electrode.
21. The electronic device of claim 20 , wherein the electron extraction layer comprises an n-dopant material.
22. The electronic device of claim 21 , wherein the n-dopant material comprises a metal having a work function equal to or smaller than about 3.0 eV or an organic compound having a highest energy occupied molecular orbital (HOMO) level equal to or greater than about −3.0 eV.
23. The electronic device of claim 21 , wherein the electron transport region comprises:
an electron transport layer; and
an electron injection layer disposed on the electron transport layer,
wherein the n-dopant material is not present within the electron transport layer.
24. The electronic device of claim 21 , further comprising a buffer layer disposed between the electron transport region and the light emitting layer and between the electron transport region and the electron extraction layer, wherein the n-dopant material is not present within the buffer layer.
25. The electronic device of claim 20 , wherein the hole transport region entirely overlaps each of the pixel definition layer, the light emitting layer, and the light receiving layer.