Manufacturing method of semiconductor structure having elastic member within via
A method of manufacturing a semiconductor structure includes: providing a first wafer including a first substrate, a first dielectric layer under the first substrate, and a first conductive pad surrounded by the first dielectric layer; disposing a first passivation layer over the first substrate; removing portions of the first dielectric layer, the first substrate and the first passivation layer to form a first opening exposing a portion of the first conductive pad; disposing a first conductive material within the first opening; disposing a first elastic material within the first opening and surrounded by the first conductive material; removing portions of the first conductive material and the first elastic material adjacent to an end of the first opening to form a first elastic member; and disposing a second conductive material over the first elastic member and the first conductive material to form a first conductive via surrounding the first elastic member.
1. A method of manufacturing a semiconductor structure, comprising:
providing a first wafer including a first substrate, a first dielectric layer under the first substrate, and a first conductive pad surrounded by the first dielectric layer;
disposing a first passivation layer over the first substrate;
removing portions of the first dielectric layer, the first substrate and the first passivation layer to form a first opening exposing a portion of the first conductive pad;
disposing a first conductive material within the first opening;
disposing a first elastic material within the first opening and surrounded by the first conductive material;
removing portions of the first conductive material and the first elastic material adjacent to an end of the first opening to form a first elastic member; and
disposing a second conductive material over the first elastic member and the first conductive material to form a first conductive via,
wherein the first conductive via surrounds the first elastic member.
2. The method of claim 1 , wherein the portions of the first conductive material and the first elastic material are removed by an etch-back process.
3. The method of claim 1 , further comprising removing portions of the first conductive material and the first elastic material over the first passivation layer by a planarization process after the disposing of the first conductive material and the first elastic material.
4. The method of claim 1 , wherein the first conductive material and the second conductive material include a same material.
5. The method of claim 1 , wherein the first elastic material includes organic material.
6. The method of claim 1 , further comprising grinding the first substrate to reduce a thickness of the first substrate prior to the disposing of the first passivation layer.
7. The method of claim 1 , wherein a third conductive pad is formed under the first conductive pad, and the third conductive pad is electrically connected to the first conductive pad and at least partially exposed through the first dielectric layer.
8. The method of claim 1 , further comprising disposing a dielectric liner conformal to the first opening prior to the disposing of the first conductive material.
9. The method of claim 8 , wherein a portion of the dielectric liner on the first conductive pad is removed.
10. The method of claim 1 , further comprising:
providing a second wafer including a second substrate, a second dielectric layer under the second substrate, and a second conductive pad surrounded by the second dielectric layer;
bonding the second dielectric layer over the first passivation layer;
disposing a second passivation layer over the second substrate;
removing portions of the second dielectric layer, the second substrate and the second passivation layer to form a second opening exposing a portion of the second conductive pad;
disposing a third conductive material within the second opening;
disposing a second elastic material within the second opening and surrounded by the third conductive material;
removing portions of the third conductive material and the second elastic material adjacent to an end of the second opening to form a second elastic member; and
disposing a fourth conductive material over the second elastic member and the third conductive material to form a second conductive via,
wherein the second conductive via surrounds the second elastic member.
11. The method of claim 10 , wherein the bonding of the second dielectric layer over the first passivation layer is implemented after the formation of the first conductive via and the first elastic member.
12. The method of claim 10 , wherein a fourth conductive pad is formed under the second conductive pad, and the fourth conductive pad is electrically connected to the second conductive pad and at least partially exposed through the second dielectric layer.
13. The method of claim 12 , further comprising bonding the fourth conductive pad to the first conductive via upon the bonding of the second dielectric layer over the first passivation layer.
14. The method of claim 12 , wherein a width of the first conductive via is substantially greater than a width of the fourth conductive pad.
15. The method of claim 12 , wherein a width of the second conductive pad is substantially greater than a width of the fourth conductive pad.