Solid-state imaging device with increased bonding strength, and method of manufacturing the solid-state imaging device
A solid-state imaging device capable of preventing variation in bonding strength in a bonding plane between a first semiconductor substrate and a second semiconductor substrate is provided. The solid-state imaging device includes a first semiconductor substrate having a plurality of first conductors, and a second semiconductor substrate bonded to the first semiconductor substrate and having a plurality of second conductors In a bonding plane between the first and second semiconductor substrates, the device includes regions where the conductors overlap, regions where insulating films and the conductors overlap, and regions where the insulating films overlap. The proportion of areas where the first insulating films and the second insulating films are bonded together to the bonding area between the first semiconductor substrate and the second semiconductor substrate is constant before and after the first semiconductor substrate and the second semiconductor substrate are bonded together.
1. A solid-state imaging device, comprising:
a first semiconductor substrate in which a plurality of first conductors is formed; and
a second semiconductor substrate which is bonded to the first semiconductor substrate and in which a plurality of second conductors is formed,
wherein the solid-state imaging device including, in a bonding plane between the first semiconductor substrate and the second semiconductor substrate, regions where the plurality of first conductors and the plurality of second conductors overlap each other for an entire bonding surface for each first conductor of the plurality of first conductors and each second conductor of the plurality of second conductors, regions where first insulating films and the plurality of second conductors overlap each other without the plurality of second conductors overlapping with at least a first conductor of the plurality of first conductors for an entire bonding surface for each first conductor of the plurality of first conductors and each second conductor of the plurality of second conductors, regions where second insulating films and the plurality of first conductors overlap each other without the plurality of first conductors overlapping with at least a second conductor of the plurality of second conductors for an entire bonding surface for each first conductor of the plurality of first conductors and each second conductor of the plurality of second conductors, and regions where the first insulating films and the second insulating films overlap each other, and
wherein the solid-state imaging device being arranged such that a proportion of areas where the first insulating films and the second insulating films are bonded together to a bonding area between the first semiconductor substrate and the second semiconductor substrate is constant before and after the first semiconductor substrate and the second semiconductor substrate are bonded together.
2. The solid-state imaging device according to claim 1 , wherein
at least some of the plurality of first conductors are arranged substantially evenly, and
at least some of the plurality of second conductors are arranged such that a distance between adjacent second conductors of the plurality of second conductors varies in a region of a substantially even arrangement.
3. The solid-state imaging device according to claim 2 , wherein at least some of the plurality of second conductors are arranged such that one of adjacent second conductors is moved by a predetermined proportion of a minimum unit of repeating units in which the plurality of first conductors are repeatedly arranged, in the substantially even arrangement region.
4. The solid-state imaging device according to claim 3 , wherein the predetermined proportion is ½.
5. The solid-state imaging device according to claim 1 , wherein at least some of the plurality of second conductors are arranged with a width of the plurality of second conductors that is an integral multiple of a repeating unit in which the plurality of first conductors is repeatedly arranged, in a substantially even arrangement region.
6. The solid-state imaging device according to claim 1 , wherein at least some of the plurality of second conductors are arranged such that a repeating unit in which the plurality of second conductors is repeatedly arranged is (an integer+½) times a repeating unit in which the first conductors are repeatedly arranged, in a substantially even arrangement region.
7. The solid-state imaging device according to claim 1 , wherein the plurality of second conductors is formed in a direction different from a direction in which the plurality of first conductors is formed.
8. The solid-state imaging device according to claim 1 , wherein the plurality of second conductors is formed in a direction going straight to a direction in which the plurality of first conductors is formed.
9. A method of manufacturing a solid-state imaging device, comprising:
forming a plurality of first conductors in a first semiconductor substrate;
forming a plurality of second conductors in a second semiconductor substrate bonded to the first semiconductor substrate; and
forming, in a bonding plane between the first semiconductor substrate and the second semiconductor substrate, regions where the plurality of first conductors and the plurality of second conductors overlap each other for an entire bonding surface for each first conductor of the plurality of first conductors and each second conductor of the plurality of second conductors, regions where first insulating films and the plurality of second conductors overlap each other without the plurality of second conductors overlapping with at least a first conductor of the plurality of first conductors for an entire bonding surface for each first conductor of the plurality of first conductors and each second conductor of the plurality of second conductors, regions where second insulating films and the plurality of first conductors overlap each other without the plurality of first conductors overlapping with at least a second conductor of the plurality of second conductors for an entire bonding surface for each first conductor of the plurality of first conductors and each second conductor of the plurality of second conductors, and regions where the first insulating films and the second insulating films overlap each other,
wherein the solid-state imaging device is arranged such that a proportion of areas where the first insulating films and the second insulating films are bonded together to a bonding area between the first semiconductor substrate and the second semiconductor substrate is constant before and after the first semiconductor substrate and the second semiconductor substrate are bonded together.
10. The method according to claim 9 , further comprising:
arranging at least some of the plurality of first conductors substantially evenly, and
arranging at least some of the plurality of second conductors such that a distance between adjacent second conductors of the plurality of second conductors varies in a region of a substantially even arrangement.
11. The method according to claim 10 , further comprising arranging at least some of the plurality of second conductors such that one of adjacent second conductors is moved by a predetermined proportion of a minimum unit of repeating units in which the plurality of first conductors is repeatedly arranged, in the substantially even arrangement region.
12. The method according to claim 11 , wherein the predetermined proportion is ½.
13. The method according to claim 9 , further comprising arranging at least some of the plurality of second conductors with a width of the plurality of second conductors that is an integral multiple of a repeating unit in which the plurality of first conductors is repeatedly arranged, in a substantially even arrangement region.
14. The method according to claim 9 , further comprising arranging at least some of the plurality of second conductors such that a repeating unit in which the plurality of second conductors is repeatedly arranged is (an integer+½) times a repeating unit in which the first conductors are repeatedly arranged, in a substantially even arrangement region.
15. An electronic apparatus equipped with a solid-state imaging device, the solid-state imaging device comprising:
at least a first semiconductor substrate in which a plurality of first conductors is formed, and
a second semiconductor substrate which is bonded to the first semiconductor substrate and in which a plurality of second conductors is formed,
wherein the solid-state imaging device including, in a bonding plane between the first semiconductor substrate and the second semiconductor substrate, regions where the plurality of first conductors and the plurality of second conductors overlap each other without the plurality of second conductors overlapping with at least a first conductor of the plurality of first conductors for an entire bonding surface for each first conductor of the plurality of first conductors and each second conductor of the plurality of second conductors, regions where first insulating films and the plurality of second conductors overlap each other for an entire bonding surface for each second conductor of the plurality of second conductors, regions where second insulating films and the plurality of first conductors overlap each other without the plurality of first conductors overlapping with at least a second conductor of the plurality of second conductors for an entire bonding surface for each first conductor of the plurality of first conductors and each second conductor of the plurality of second conductors, and regions where the first insulating films and the second insulating films overlap each other, and
wherein the solid-state imaging device being arranged such that a proportion of areas where the first insulating films and the second insulating films are bonded together to a bonding area between the first semiconductor substrate and the second semiconductor substrate is constant before and after the first semiconductor substrate and the second semiconductor substrate are bonded together.
16. The electronic apparatus according to claim 15 , wherein
at least some of the plurality of first conductors are arranged substantially evenly, and
at least some of the plurality of second conductors are arranged such that a distance between adjacent second conductors of the plurality of second conductors varies in a region of a substantially even arrangement.
17. The electronic apparatus according to claim 16 , wherein at least some of the plurality of second conductors are arranged such that one of adjacent second conductors is moved by a predetermined proportion of a minimum unit of repeating units in which the plurality of first conductors are repeatedly arranged, in the substantially even arrangement region.
18. The electronic apparatus according to claim 17 , wherein the predetermined proportion is ½.
19. The electronic apparatus according to claim 15 , wherein at least some of the plurality of second conductors are arranged with a width of the plurality of second conductors that is an integral multiple of a repeating unit in which the plurality of first conductors is repeatedly arranged, in a substantially even arrangement region.
20. The electronic apparatus according to claim 15 , wherein at least some of the plurality of second conductors are arranged such that a repeating unit in which the plurality of second conductors is repeatedly arranged is (an integer+½) times a repeating unit in which the first conductors are repeatedly arranged, in a substantially even arrangement region.