Semiconductor device including capacitor structure and method for manufacturing the same
A semiconductor device of the disclosure may include a substrate, a gate structure on the substrate, a capacitor contact structure connected to the substrate, a lower electrode connected to the capacitor contact structure, a supporter supporting a sidewall of the lower electrode, an interfacial layer covering the lower electrode and including a halogen material, a capacitor insulating layer covering the interfacial layer and the supporter, and an upper electrode covering the capacitor insulating layer. The interfacial layer may include a first surface contacting the lower electrode, and a second surface contacting the capacitor insulating layer. The halogen material of the interfacial layer may be closer to the first surface than to the second surface.
1. A semiconductor device comprising:
a substrate;
a gate structure on the substrate;
a capacitor contact structure connected to the substrate;
a lower electrode connected to the capacitor contact structure;
a supporter supporting a sidewall of the lower electrode;
an interfacial layer covering the lower electrode and including a halogen material, the interfacial layer including a first surface and a second surface, the first surface of the interfacial layer contacting the lower electrode, the first surface of the interfacial layer being closer to the halogen material compared to the second surface of the interfacial layer;
a capacitor insulating layer covering the interfacial layer and the supporter, the capacitor insulating layer contacting the second surface of the interfacial layer; and
an upper electrode covering the capacitor insulating layer.
2. The semiconductor device according to claim 1 , wherein the halogen material is one of F, Cl, I, or Br.
3. The semiconductor device according to claim 1 , wherein
the lower electrode comprises a halogen substance; and
the halogen substance of the lower electrode is closer to the interfacial layer than to a center of the lower electrode.
4. The semiconductor device according to claim 1 , wherein:
the interfacial layer comprises a first metal material;
the lower electrode comprises a second metal material;
the supporter comprises a third metal material; and
an electron affinity of the first metal material and an electron affinity of the second metal material each are lower than an electron affinity of the third metal material.
5. The semiconductor device according to claim 4 , wherein:
the first metal material is one of Nb, Ti, Zr, Hf, In, Al, Sr, Ba, Y, La, or Gd;
the second metal material is Ti; and
the third metal material is Si.
6. The semiconductor device according to claim 1 , wherein the supporter comprises a halogen substance.
7. The semiconductor device according to claim 6 , wherein the halogen substance of the supporter is a same element as the halogen material of the interfacial layer.
8. A semiconductor device comprising:
a substrate; and
a capacitor structure electrically connected to the substrate,
the capacitor structure including a lower electrode, a supporter supporting a sidewall of the lower electrode, an interfacial layer covering the lower electrode, a capacitor insulating layer covering the interfacial layer and the supporter, and an upper electrode covering the capacitor insulating layer,
the interfacial layer including first metal materials, first bonding materials bonded to the first metal materials, and halogen materials bonded to the first metal materials,
the halogen materials of the interfacial layer defining a surface of the interfacial layer contacting the lower electrode,
the halogen materials being a halogen element.
9. The semiconductor device according to claim 8 , wherein the first bonding materials are a nonmetal element that is different from the halogen materials of the interfacial layer.
10. The semiconductor device according to claim 9 , wherein the first bonding materials are O.
11. The semiconductor device according to claim 8 , wherein the halogen materials of the interfacial layer are closer to the lower electrode than to the capacitor insulating layer.
12. The semiconductor device according to claim 8 , wherein a number of the first bonding materials in the interfacial layer is greater than a number of the halogen materials in the interfacial layer.
13. The semiconductor device according to claim 8 , wherein an electron affinity of the first metal materials is lower than an electron affinity of a metal material in the supporter.
14. The semiconductor device according to claim 13 , wherein the first metal materials are one of Nb, Ti, Zr, Hf, In, Al, Sr, Ba, Y, La, or Gd.
15. A semiconductor device comprising:
a substrate; and
a capacitor structure electrically connected to the substrate,
the capacitor structure including a lower electrode, a supporter supporting a sidewall of the lower electrode, an interfacial layer covering the lower electrode, a capacitor insulating layer covering the interfacial layer and the supporter, and an upper electrode covering the capacitor insulating layer,
the interfacial layer including a first metal material, a first bonding material bonded to the first metal material, and a halogen material bonded to the first metal material,
the lower electrode including a second metal material, a second bonding material bonded to the second metal material, and a halogen substance bonded to the second metal material,
the halogen material of the interfacial layer being closer to the lower electrode than to the capacitor insulating layer,
the halogen substance of the lower electrode being closer to the interfacial layer than to a center of the lower electrode.
16. The semiconductor device according to claim 15 , wherein the halogen material of the interfacial layer and the halogen substance of the lower electrode are identical to each other.
17. The semiconductor device according to claim 15 , wherein the first metal material and the second metal material are metal elements identical to each other.
18. The semiconductor device according to claim 17 , wherein the first metal material and the second metal material are Ti.
19. The semiconductor device according to claim 15 , wherein the first bonding material and the second bonding material are nonmetal elements different from each other.
20. The semiconductor device according to claim 15 , wherein
the first bonding material is O, and
the second bonding material is N.