Area selective deposition for cap layer formation in advanced contacts
A method of area selective deposition for cap layer formation in advanced semiconductor contacts. The method includes providing a planarized substrate including a first dielectric layer and a first metal layer, oxidizing a surface of the first metal layer to form an oxidized metal layer, and selectively depositing a second dielectric layer on the oxidized metal layer. The selectively depositing the second dielectric layer can include moving the planarized substrate below a gas inlet dispensing a deposition gas during a spatial vapor phase deposition process, where the deposition gas is preferentially exposed to the oxidized metal layer extending above a surface of the first dielectric layer.
1. A substrate processing method, comprising:
providing a planarized substrate including a first dielectric layer and a first metal layer;
oxidizing a surface of the first metal layer to form an oxidized metal layer; and
selectively depositing a second dielectric layer on the oxidized metal layer.
2. The method of claim 1 , wherein the first metal layer is selected from the group consisting of tungsten (W) metal, ruthenium (Ru) metal, cobalt (Co) metal, molybdenum (Mo), and a combination of thereof.
3. The method of claim 2 , wherein the first metal layer includes W metal and the oxidizing forms an oxidized W metal layer that is accompanied by an increase in in volume such that the oxidized W metal layer extends above a horizontal plane of the first metal layer and the first dielectric layer.
4. The method of claim 1 , wherein the selectively depositing the second dielectric layer includes moving the planarized substrate below a gas inlet dispensing a deposition gas during a spatial vapor phase deposition process, and wherein the deposition gas is preferentially exposed to the oxidized metal layer extending above a surface of the first dielectric layer.
5. The method of claim 1 , wherein the second dielectric layer is selected from the group consisting of TiO 2 , HfO 2 , ZrO 2 , Al 2 O 3 , SiO 2 , SiN, and a combination thereof.
6. The method of claim 1 , wherein the second dielectric layer is selected from the group consisting of a metal oxide or a metal nitride.
7. The method of claim 1 , further comprising:
using the second dielectric layer as a hard mask for a subsequent etching process to form a fully self-aligned via, a self-aligned contact, a supervia, or a self-aligned gate contact in the first dielectric layer.
8. The method of claim 1 , further comprising:
prior to oxidizing the surface of the first metal layer, recessing the first dielectric layer below an upper surface of the first metal layer.
9. A substrate processing method, comprising:
providing a planarized substrate including a first dielectric layer and a first metal layer;
selectively depositing a second dielectric layer on the first dielectric layer, wherein the selectively depositing forms a recessed feature above the first metal layer;
filling the recessed feature with a second metal layer;
removing the second dielectric layer from the substrate; and
selectively depositing a third dielectric layer on the second metal layer.
10. The method of claim 9 , wherein the selectively depositing the third dielectric layer includes moving the planarized substrate below a gas inlet dispensing a deposition gas during a spatial vapor phase deposition process, and wherein the deposition gas is preferentially exposed to the second metal layer extending above a surface of the first dielectric layer.
11. The method of claim 9 , wherein the first metal layer is selected from the group consisting of tungsten (W) metal, ruthenium (Ru) metal, cobalt (Co) metal, molybdenum (Mo), and a combination of thereof.
12. The method of claim 9 , wherein the second metal layer is selected from the group consisting of tungsten (W) metal, ruthenium (Ru) metal, cobalt (Co) metal, molybdenum and a combination of thereof.
13. The method of claim 9 , wherein the second dielectric layer is selected from the group consisting of TiO 2 , HfO 2 , ZrO 2 , Al 2 O 3 , SiO 2 , SiN, and a combination thereof.
14. The method of claim 9 , wherein the third dielectric layer is selected from the group consisting of TiO 2 , HfO 2 , ZrO 2 , Al 2 O 3 , SiO 2 , SiN, and a combination thereof.
15. The method of claim 9 , further comprising:
using the third dielectric layer as a hard mask for a subsequent etching process to form a fully self-aligned via, a self-aligned contact, a supervia, or a self-aligned gate contact in the first dielectric layer.
16. A substrate processing method, comprising:
providing a planarized substrate including a first dielectric layer and a first metal layer;
recessing the first dielectric layer below an upper surface of the first metal layer;
oxidizing a surface of the first metal layer to form an oxidized metal layer;
selectively depositing a second dielectric layer on the oxidized metal layer; and
using the second dielectric layer as a hard mask for a subsequent etching process to form a fully self-aligned via, a self-aligned contact, a supervia, or a self-aligned gate contact in the first dielectric layer.
17. The method of claim 16 , wherein the selectively depositing the second dielectric layer includes moving the planarized substrate below a gas inlet dispensing a deposition gas during a spatial vapor phase deposition process, and wherein the deposition gas is preferentially exposed to the first metal layer extending above a surface of the first dielectric layer.
18. The method of claim 16 , wherein the first metal layer is selected from the group consisting of tungsten (W) metal, ruthenium (Ru) metal, cobalt (Co) metal, molybdenum and a combination of thereof.
19. The method of claim 16 , wherein the second dielectric layer is selected from the group consisting TiO 2 , HfO 2 , ZrO 2 , Al 2 O 3 , SiO 2 , SiN, and a combination thereof.