Multi-level memristor elements
There is described a two-terminal multi-level memristor element synthesised from binary memristors, which is configured to implement a variable resistance based on unary or binary code words. There is further described a circuit such as a synapse circuit implemented using a multi-level memristor element.
1. A multi-level memristor comprising:
a plurality of programmable resistance portions connected in series between first and second terminals of the multi-level memristor apparatus, each programmable resistance portion comprising one or more binary memristors that can be selectively programmed to either a high resistance or a low resistance state,
wherein for a first set of at least one of said plurality of programmable resistance portions, each programmable resistance portion comprises a plurality of said binary memristors connected in parallel; and
wherein for a second, different, set of at least one of said plurality of programmable resistance portions, each programmable resistance portion comprises a non-programmable shunt resistance in parallel with said one or more binary memristors.
2. The multi-level memristor of claim 1 wherein said first set comprises more than one of said plurality of programmable resistance portions and the number of binary memristors in parallel in each of the programmable resistance portions of the first set is different from each of the other programmable resistance portions of the first set.
3. The multi-level memristor of claim 2 where the number of binary memristors in parallel in the programmable resistance portions of the first set differ from one another by a factor of two.
4. The multi-level memristor of claim 1 wherein each of the programmable resistance portions of the second set comprises just one binary memristor in parallel with the non-programmable shunt resistance.
5. The multi-level memristor of claim 1 wherein said second set comprises more than one of said plurality of programmable resistance portions and a resistance value of the non-programmable shunt resistance in each of the programmable resistance portions of the second set is different from each of the other programmable resistance portions of the second set.
6. The multi-level memristor of claim 1 wherein one of plurality of programmable resistance portions is not part of the first set or the second set and comprises just one binary memristor.
7. The multi-level memristor of claim 1 wherein each programmable resistance portions is configured to have a resistance difference value which is a difference in an overall resistance for the programmable resistance portion with each of the binary memristors programmed to the high resistance state and the overall resistance for the programmable resistance portion with each of the binary memristors programmed to the low resistance state and wherein the resistance difference values of the different programmable resistance portions differ from one another by a defined scaling factor.
8. The multi-level memristor of claim 7 wherein the scaling factor is two.
9. The multi-level memristor of claim 1 further comprising a fixed resistance portion in series with the plurality of programmable resistance portions, wherein the fixed resistance portion comprises an offset resistor.
10. The multi-level memristor of claim 1 wherein each of said binary memristors has substantially the same resistance characteristics.
11. The multi-level memristor of claim 1 further comprising programming circuitry configured such that the binary memristors of each programmable resistance portions can be programmed to the high resistance state or the low resistance state independently of the binary memristors of the other programmable resistance portions.
12. The multi-level memristor of claim 11 further comprising a controller configured to receive an input data value and to control the programming circuitry to programme the programmable resistance portions according to the input data value.
13. An analog computing circuit comprising the multi-level memristor of claim 1 .
14. An artificial neural network comprising the multi-level memristor of claim 1 .
15. A multi-level memristor comprising:
a plurality of programmable resistance portions connected in parallel between first and second terminals of the multi-level memristor apparatus, each programmable resistance portion comprising one or more binary memristors that can be selectively programmed to either a high resistance or a low resistance state,
wherein for a first set of at least one of said plurality of programmable resistance portions, each programmable resistance portion comprises a plurality of said binary memristors connected in series; and
wherein each programmable resistance portions is configured to have a resistance difference value which is a difference in an overall resistance for the programmable resistance portion with each of the binary memristors programmed to the high resistance state and the overall resistance for the programmable resistance portion with each of the binary memristors programmed to the low resistance state and wherein the resistance difference values of the different programmable resistance portions differ from one another by a defined scaling factor.
16. The multi-level memristor of claim 15 wherein said first set comprises more than one of said plurality of programmable resistance portions and the number of binary memristors in series in each of the programmable resistance portions of the first set is different from each of the other programmable resistance portions of the first set.
17. The multi-level memristor of claim 15 further comprising a second, different, set of at least one of said plurality of programmable resistance portions, wherein each programmable resistance portion of the second set comprises a plurality of binary memristors connected in parallel.
18. The multi-level memristor of claim 15 wherein one of plurality of programmable resistance portions comprises just one binary memristor.
19. The multi-level memristor of claim 15 wherein each of said binary memristors has substantially the same resistance characteristics.