Plasma processing apparatus and plasma processing method
A plasma processing apparatus includes: a chamber; a stage provided in the chamber; a microwave transmission window provided on a wall surface of the chamber; a microwave supply configured to supply microwaves into the chamber via the microwave transmission window; a shower plate configured to partition an interior of the chamber into a plasma generation space, which is a region where the microwave transmission window is disposed, and a processing space, which is a region where the stage is disposed; and a protrusion protruding from the shower plate into the plasma generation space and including a conductor in at least a portion of the protrusion.
1. A plasma processing apparatus comprising:
a chamber;
a stage provided in the chamber;
a microwave transmission window provided on a wall surface of the chamber;
a microwave supply configured to supply microwaves into the chamber via the microwave transmission window;
a shower plate configured to partition an interior of the chamber into a plasma generation space, which is a region where the microwave transmission window is disposed, and a processing space, which is a region where the stage is disposed; and
a protrusion protruding from the shower plate toward the microwave transmission window, disposed in the plasma generation space, and including a conductor in at least a portion of the protrusion,
wherein the protrusion is configured to function as a plasma ignition source and to generate standing waves between the microwave transmission window and the protrusion.
2. The plasma processing apparatus of claim 1 , wherein a portion of the protrusion close to the microwave transmission window is formed of a dielectric material, and
wherein the conductor is located close to the microwave transmission window via the dielectric material.
3. The plasma processing apparatus of claim 2 , wherein a gas hole that is open toward the microwave transmission window is formed in the protrusion.
4. The plasma processing apparatus of claim 3 , wherein an end face of the gas hole is enlarged in diameter.
5. The plasma processing apparatus of claim 4 , wherein a shortest distance from the conductor to a surface of the microwave transmission window is 3 mm to 10 mm.
6. The plasma processing apparatus of claim 5 , wherein a plurality of through-holes is formed in the shower plate.
7. The plasma processing apparatus of claim 6 , wherein the microwave transmission window includes a plurality of microwave transmission windows provided in a central portion of the wall surface of the chamber and an outer peripheral portion surrounding the central portion, respectively, and
wherein the protrusion includes one or more protrusions facing at least one of the plurality of microwave transmission windows.
8. The plasma processing apparatus of claim 7 , wherein the protrusion includes one protrusion facing the microwave transmission window in the central portion.
9. The plasma processing apparatus of claim 7 , wherein the protrusion includes a plurality of protrusions facing the microwave transmission window in the central portion and the microwave transmission windows in the outer peripheral portion, respectively.
10. The plasma processing apparatus of claim 1 , wherein a gas hole that is open toward the microwave transmission window is formed in the protrusion.
11. The plasma processing apparatus of claim 1 , wherein a shortest distance from the conductor to a surface of the microwave transmission window is 3 mm to 10 mm.
12. The plasma processing apparatus of claim 1 , wherein a plurality of through-holes is formed in the shower plate.
13. The plasma processing apparatus of claim 1 , wherein the microwave transmission window includes a plurality of microwave transmission windows provided in a central portion of the wall surface of the chamber and an outer peripheral portion surrounding the central portion, respectively, and
wherein the protrusion includes one or more protrusions facing at least one of the plurality of microwave transmission windows.
14. A plasma processing method executed by the plasma processing apparatus of claim 7 , the method comprising:
(a) preparing a substrate;
(b) supplying a gas into the chamber;
(c) supplying microwave power to at least one of the plurality of microwave transmission windows to ignite plasma;
(d) after a predetermined period of time has elapsed from (c), supplying microwave power to remaining ones of the plurality of microwave transmission windows to which the microwave power has not been supplied in (c); and
(e) executing a predetermined process on the substrate by the plasma.
15. The plasma processing method of claim 14 , wherein (c) includes supplying the microwave power to the microwave transmission window in the central portion, and
wherein (d) includes supplying the microwave power to the microwave transmission windows in the outer peripheral portion.