IP Library › Granted Patent US 12,205,840
Granted Patent B2
US 12,205,840 · App. 17/889,529 · Granted Jan 21, 2025

Calibration hardware for ion implanter

Inventors: Lung-Yin Tang (Keelung, TW); Tsung-Min Lin (Zhubei, TW); Hsin-Sheng Liang (Hsinchu, TW)
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
H01L21/683H01J37/3171
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Quick Facts
Patent No.
US 12,205,840
App. No.
17/889,529
Granted
Jan 21, 2025
Kind
B2
Abstract

A horizontally oriented calibration jig for a wafer gripper arm of an ion implanter is disclosed. The calibration jig is mounted within the process chamber of the ion implanter. The calibration jig includes a mounting plate that spans a diameter of the wafer gripper arm, a support stand passing through the mounting plate, and a calibration plate at a bottom end of the support stand. The perimeter of the calibration plate includes a plurality of notches. The calibration plate is rotated. If any finger of the wafer gripper arm falls into a notch, the rotating calibration plate stops. The finger is then adjusted until it does not fall into a notch.

Claims (41)

1. A method for calibrating a wafer gripper arm of an ion implantation device, comprising:

inserting the wafer gripper arm into a horizontally oriented calibration jig that comprises:

a mounting plate that spans a diameter of the wafer gripper arm;

a support stand passing through the mounting plate; and

a calibration plate at a bottom end of the support stand, a perimeter of the calibration plate including one or more notches;

rotating the calibration plate; and

adjusting any finger of the wafer gripper arm that falls into the one or more notches until the calibration plate can be rotated without any fingers falling into a notch of the calibration plate.

2. The method of claim 1 , wherein the calibration plate has a plurality of notches spaced around a perimeter of the calibration plate.

3. The method of claim 1 , wherein the calibration plate is circular.

4. The method of claim 1 , wherein each notch has a depth of about 1 millimeter to about 2 millimeters.

5. The method of claim 1 , wherein each notch has a rectangular, elliptical, or polygonal shape.

6. The method of claim 1 , wherein a diameter of the calibration plate is less than an inner diameter of the wafer gripper arm.

7. The method of claim 1 , wherein the mounting plate includes vertical hooks at opposite ends thereof for holding the wafer gripper arm in place.

8. The method of claim 1 , wherein the calibration plate is located about 30 mm to about 100 mm below the mounting plate.

9. The method of claim 1 , further comprising orienting the wafer gripper arm horizontally prior to inserting the wafer gripper arm into the calibration jig.

10. The method of claim 1 , wherein the calibration jig is located within a process chamber of the ion implantation device.

11. A method for repairing a wafer gripper arm of an ion implantation device, comprising:

replacing one or more elements of the wafer gripper arm;

moving the wafer gripper arm within a process chamber of the ion implantation device to a horizontally-oriented calibration jig that comprises:

a mounting plate that spans a diameter of the wafer gripper arm;

a support stand passing through the mounting plate; and

a calibration plate at a bottom end of the support stand, a perimeter of the calibration plate including one or more notches;

inserting the wafer gripper arm into the calibration jig;

rotating the calibration plate; and

adjusting any finger of the wafer gripper arm that falls into the one or more notches until the calibration plate can be rotated without any fingers falling into a notch of the calibration plate.

12. The method of claim 11 , wherein the calibration plate has a plurality of notches spaced around a perimeter of the calibration plate.

13. The method of claim 11 , wherein the calibration plate is circular.

14. The method of claim 11 , wherein each notch has a depth of about 1 millimeter to about 2 millimeters.

15. The method of claim 11 , wherein each notch has a rectangular, elliptical, or polygonal shape.

16. The method of claim 11 , wherein the mounting plate includes vertical hooks at opposite ends thereof for holding the wafer gripper arm in place.

17. The method of claim 11 , wherein the calibration plate is located about 30 mm to about 100 mm below the mounting plate.

18. An ion implantation device, comprising:

a process chamber containing a vertically oriented scanning wheel with a plurality of wafer support structures;

a load-lock chamber;

at least one wafer gripper arm located within the process chamber for transferring wafers from the load-lock chamber to the wafer support structures of the scanning wheel; and

a horizontally oriented calibration jig within the process chamber, the calibration jig comprising

a mounting plate that spans a diameter of the wafer gripper arm;

a support stand passing through the mounting plate; and

a calibration plate at a bottom end of the support stand, a perimeter of the calibration plate including one or more notches.

19. The method of claim 18 , wherein the calibration plate has a plurality of notches spaced around a perimeter of the calibration plate.

20. The device of claim 18 , wherein the calibration plate is located about 30 mm to about 100 mm below the mounting plate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 24, 2022
From: TANG, LUNG-YIN; LIN, TSUNG-MIN; LIANG, HSIN-SHENG
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
Reel/Frame 061516/0185 →
Continuity (1)
Related Publication 20240063045A1 · Feb 22, 2024
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