Semiconductor device and manufacturing method thereof
A semiconductor device according to the present embodiment includes a substrate and a semiconductor chip. The substrate has a first face and a plurality of conductive connection parts provided on the first face. The semiconductor chip has a second face that faces the first face and a plurality of connection bumps provided on the second face and electrically connected to the plurality of conductive connection parts. The conductive connection part arranged in a chip outer peripheral region of a chip region on the first face where the semiconductor chip is arranged is different in thickness from the conductive connection part arranged in a chip central region of the chip region.
1. A semiconductor device comprising:
a substrate having a first face and a plurality of conductive connection parts provided on the first face; and
a semiconductor chip having a second face that faces the first face and a plurality of connection bumps provided on the second face and electrically connected to the plurality of conductive connection parts,
wherein:
a thickness of a conductive connection part arranged in a chip outer peripheral region of a chip region on the first face where the semiconductor chip is arranged is different from a thickness of a conductive connection part arranged in a chip central region of the chip region,
the substrate further includes a plurality of columnar electrodes provided so as to extend in a normal direction of the first face and electrically connected to the plurality of conductive connection parts, and
the columnar electrodes and the conductive connection parts include:
a first metal layer; and
a second metal layer that is provided above the first metal layer and is different from the first metal layer.
2. The semiconductor device according to claim 1 , wherein the conductive connection part arranged in the chip outer peripheral region is thicker than the conductive connection part arranged in the chip central region.
3. The semiconductor device according to claim 1 , wherein, a difference between a maximum value and a minimum value from among thicknesses of the plurality of conductive connection parts is in a range of approximately 3 μm to approximately 20 μm.
4. The semiconductor device according to claim 1 , wherein:
the conductive connection part arranged in the chip central region is arranged so as to overlap with a corresponding one of the columnar electrodes when viewed in the normal direction, and
the conductive connection part arranged in the chip outer peripheral region is arranged away from a corresponding one of the columnar electrodes when viewed in the normal direction.
5. The semiconductor device according to claim 1 , wherein:
the conductive connection part arranged in the chip central region is arranged so as to overlap with a corresponding one of the columnar electrodes when viewed in the normal direction, and
the conductive connection part arranged in the chip outer peripheral region is arranged so as to at least partly overlap with a corresponding one of the columnar electrodes when viewed in the normal direction.
6. The semiconductor device according to claim 1 , wherein the first metal layer is provided so as to reach a predetermined height lower than the first face.
7. The semiconductor device according to claim 1 , wherein the first metal layers have a substantially same thickness.
8. The semiconductor device according to claim 1 , wherein a thickness of the first metal layer arranged in the chip outer peripheral region is different from a thickness of the first metal layer arranged in the chip central region.
9. The semiconductor device according to claim 1 , wherein the first metal layer and the second metal layer are different from each other in at least one of a material and a concentration and a type of impurities.
10. The semiconductor device according to claim 1 , wherein:
the substrate further includes a first wiring part provided on the first face and arranged in a region different from the chip region, and
a thickness of the first wiring part is between the thickness of the conductive connection part arranged in the chip outer peripheral region and the thickness of the conductive connection part arranged in the chip central region.
11. The semiconductor device according to claim 1 , wherein a difference between the thickness of the conductive connection part arranged in the chip outer peripheral region and the thickness of the conductive connection part arranged in the chip central region corresponds to a warpage of the semiconductor chip occurring at a time of being connected to the substrate.
12. The semiconductor device according to claim 1 , wherein the thickness of the conductive connection part gradually changes in a region from a central part to an outer peripheral end part of the semiconductor chip.
13. The semiconductor device according to claim 1 , wherein the connection bumps have a substantially same thickness or diameter in a region from a central part to an outer peripheral end part of the semiconductor chip.
14. A semiconductor device manufacturing method comprising:
forming, on a first face of a substrate, a plurality of conductive connection parts whose thicknesses are different depending on their position on the first face; and
providing a semiconductor chip having a second face and a plurality of connection bumps provided on the second face on the substrate, so that the connection bumps are electrically connected to the conductive connection parts,
wherein:
a thickness of a conductive connection part arranged in a chip outer peripheral region of a chip region on the first face where the semiconductor chip is arranged is different from a thickness of a conductive connection part arranged in a chip central region of the chip region, and
the semiconductor device manufacturing method further comprises:
forming a plurality of holes on the first face of the substrate;
forming a plurality of columnar electrodes so as to fill the plurality of holes; and
forming a conductive connection part overlapped with a corresponding one of the columnar electrodes, when viewed in a normal direction of the first face, in the chip central region on the first face, and forming a conductive connection part away from a corresponding one of the columnar electrodes, when viewed in the normal direction of the first face, in the chip outer peripheral region on the first face.
15. A semiconductor device comprising:
a substrate having a first face and a plurality of conductive connection parts provided on the first face; and
a semiconductor chip having a second face that faces the first face and a plurality of connection bumps provided on the second face and electrically connected to the plurality of conductive connection parts,
wherein:
a thickness of a conductive connection part arranged in a chip outer peripheral region of a chip region on the first face where the semiconductor chip is arranged is different from a thickness of a conductive connection part arranged in a chip central region of the chip region,
the substrate further includes a plurality of columnar electrodes provided so as to extend in a normal direction of the first face and electrically connected to the plurality of conductive connection parts,
the conductive connection part arranged in the chip central region is arranged so as to overlap with a corresponding one of the columnar electrodes when viewed in the normal direction, and
the conductive connection part arranged in the chip outer peripheral region is arranged so as to at least partly overlap with a corresponding one of the columnar electrodes when viewed in the normal direction.
16. The semiconductor device according to claim 15 , wherein the columnar electrodes and the conductive connection parts comprise an integral third metal layer.
17. The semiconductor device according to claim 15 , wherein the columnar electrodes and the conductive connection parts include:
a first metal layer; and
a second metal layer that is provided above the first metal layer and different from the first metal layer.
18. The semiconductor device according to claim 17 , wherein the first metal layers have a substantially same thickness.
19. The semiconductor device according to claim 17 , wherein a thickness of the first metal layer arranged in the chip outer peripheral region is different from a thickness of the first metal layer arranged in the chip central region.
20. The semiconductor device according to claim 17 , wherein the first metal layer and the second metal layer are different from each other in at least one of a material and a concentration and a type of impurities.