IP Library › Granted Patent US 12,205,978
Granted Patent B2
US 12,205,978 · App. 17/691,540 · Granted Jan 21, 2025

Light emitting diode unit

Inventors: Seung Sik Hong (Ansan-si, KR); Hyuck Jun Kim (Ansan-si, KR)
Assignee: Seoul Semiconductor Co., Ltd.
H01L27/156H01L33/50H01L33/58
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Quick Facts
Patent No.
US 12,205,978
App. No.
17/691,540
Granted
Jan 21, 2025
Kind
B2
Abstract

A light emitting diode device including a substrate, a plurality of terminals disposed on the substrate, and a plurality of light sources disposed on the substrate, electrically connected to the plurality of terminals, and configured to emit light, in which each of the light sources includes a light emitting diode chip, and a wall surrounding side surfaces of the light emitting diode chip, at least one of the light sources includes a wavelength converter disposed on the light emitting diode chip, and at least two light sources share the wall.

Claims (44)

1. A light emitting diode device comprising:

a substrate;

a plurality of terminals disposed on the substrate; and

a plurality of light sources disposed on the substrate, electrically connected to the plurality of terminals, and configured to emit light, wherein the plurality of light sources include a first light source, a second light source, and a third light source,

wherein at least one of the light sources comprises:

a light emitting diode chip; and

a wall surrounding side surfaces of the light emitting diode chip,

wherein the at least one of the light sources includes a wavelength converter disposed on the light emitting diode chip,

wherein at least two light sources share a first wall,

wherein the plurality of light sources are arranged in one direction in an order of the first light source, the second light source, and the third light source, and a distance between the second light source and the first light source that share the first wall is less than a distance between the second light source and the third light source that do not share the first wall, and

wherein the wavelength converter covers side surfaces and an upper surface of the light emitting diode chip.

2. The light emitting diode device of claim 1 , wherein the plurality of light sources are configured to emit light of different wavelengths.

3. The light emitting diode device of claim 2 , wherein the wall has a height greater than that of the light emitting diode chip surrounded by the wall.

4. The light emitting diode device of claim 3 , wherein side surfaces of the wavelength converter are surrounded by the wall.

5. The light emitting diode device of claim 4 , wherein the at least one of the light sources includes a color filter disposed on the wall.

6. The light emitting diode device of claim 2 , wherein:

a height of the wall is the same as that of the light emitting diode chip surrounded by the wall; and

the wavelength converter is disposed on the wall.

7. The light emitting diode device of claim 6 , wherein:

the at least one of the light sources includes a color filter disposed on the wall; and

the color filter is spaced apart from the wall.

8. The light emitting diode device of claim 1 , wherein the wavelength converter comprises one or more types of phosphors to convert wavelength of blue light or ultraviolet light.

9. The light emitting diode device of claim 8 , wherein the wavelength converter further comprises a carrier supporting the one or more types of phosphors.

10. The light emitting diode device of claim 9 , wherein the carrier comprises silicone.

11. The light emitting diode device of claim 1 , wherein the at least one of the light sources further comprises a transparent layer disposed on the light emitting diode chip.

12. The light emitting diode device of claim 11 , wherein the transparent layer comprises at least one of silicone and epoxy.

13. The light emitting diode device of claim 11 , wherein the transparent layer is disposed between the light emitting diode chip and the wavelength converter.

14. The light emitting diode device of claim 1 , wherein the wall is a black wall.

15. The light emitting diode device of claim 1 , wherein the at least one of the light sources includes a color filter disposed on the wavelength converter.

16. A light emitting diode device comprising:

a substrate;

a plurality of terminals disposed on the substrate; and

a plurality of light sources disposed on the substrate, electrically connected to the plurality of terminals, and configured to emit light, wherein the plurality of light sources include a first light source, a second light source, and a third light source,

wherein at least one of the light sources comprises:

a light emitting diode chip; and

a first wall surrounding side surfaces of the light emitting diode chip,

wherein the at least one of the light sources includes a wavelength converter disposed on the light emitting diode chip,

wherein the first wall has a height greater than that of the light emitting diode chip,

wherein a second wall is disposed on an outer side of the first wall and surrounds a side surface of the first wall,

wherein at least two light sources share a wall, and

wherein the plurality of light sources is arranged in one direction in an order of the first light source, the second light source, and the third light source, and a distance between the second light source and the first light source that share the wall is less than a distance between the second light source and the third light source that do not share the wall.

17. The light emitting diode device of claim 16 , further comprising a color filter disposed on the wavelength converter.

18. The light emitting diode device of claim 17 , wherein an upper surface of the first wall and an upper surface of the wavelength converter are disposed on a same plane.

19. The light emitting diode device of claim 18 , wherein the color filter is disposed on the upper surface of the first wall.

Priority Claims (1)
KR 10-2017-0014865 · Feb 2, 2017 · national
Continuity (2)
Continuation 16482886
Related Publication 20220199684A1 · Jun 23, 2022
References Cited (34)
US 6744077B2 · Trottier et al. · 2004 [cited by applicant]
US 9236539B2 · Yang et al. · 2016 [cited by applicant]
US 9490398B2 · Oyamada et al. · 2016 [cited by applicant]
US 9890930B2 · Tien et al. · 2018 [cited by applicant]
US 10236421B2 · Jung et al. · 2019 [cited by applicant]
US 10784415B2 · Jung et al. · 2020 [cited by applicant]
US 10971662B2 · Cho et al. · 2021 [cited by applicant]
US 20070114559A1 · Sayer et al. · 2007 [cited by applicant]
US 20090294780A1 · Chou · 2009 [cited by examiner]
US 20110254039A1 · Kim et al. · 2011 [cited by applicant]
US 20140319553A1 · Ye et al. · 2014 [cited by applicant]
US 20140339495A1 · Bibl · 2014 [cited by examiner]
US 20150362165A1 · Chu et al. · 2015 [cited by applicant]
US 20170133357A1 · Kuo et al. · 2017 [cited by applicant]
US 20180151543A1 · Lee · 2018 [cited by examiner]
CN 102064171 · 2011 [cited by applicant]
CN 103453352 · 2013 [cited by applicant]
CN 103872226 · 2014 [cited by applicant]
CN 104854716 · 2015 [cited by applicant]
CN 105378952 · 2016 [cited by applicant]
CN 106058006 · 2016 [cited by applicant]
CN 106257695 · 2016 [cited by applicant]
KR 20110078482 · 2011 [cited by applicant]
KR 1020110115506 · 2011 [cited by applicant]
KR 1020130017067 · 2013 [cited by applicant]
KR 1020130022595 · 2013 [cited by applicant]
KR 1020170000512 · 2017 [cited by applicant]
TW 200421683 · 2004 [cited by applicant]
Office Action issued for corresponding Chinese Patent Application No. 201880005631.9 (with English Concise Explanation). [cited by applicant]
Chinese Office Action dated Aug. 29, 2022, in Chinese Patent Application No. 201880005631.9 (with English Concise Explanation). [cited by applicant]
International Search Report mailed May 14, 2018, in International Application No. PCT/KR2018/001367 (with English Translation). [cited by applicant]
Non-Final Office Action issued Jul. 9, 2021, in U.S. Appl. No. 16/482,886. [cited by applicant]
Notice of Allowance issued Dec. 9, 2021, in U.S. Appl. No. 16/482,886. [cited by applicant]
Office Action dated Oct. 30, 2023, issued to Korean Patent Application No. 10-2017-0014865 (with English Translation). [cited by applicant]