Double program debug method for NAND memory using self-verification by internal firmware
The present disclosure provides a method for programing flash memory devices. The method may include programming a selected page of the NAND flash memory device according to programming data. The selected page may include memory cells corresponding to a word line. The programming of the selected page may include programming operations with programming voltages applied on the word line and a read operation performed on the selected page.
1. A programming method for a NAND flash memory device, comprising:
programming a selected page of the NAND flash memory device according to programming data, wherein the selected page comprises memory cells corresponding to a word line, the programming of the selected page comprising:
programming operations with programming voltages applied on the word line; and
a read operation performed on the selected page.
2. The programming method of claim 1 , wherein the read operation is performed without a read command sent by a memory controller that is coupled to the NAND flash memory device.
3. The programming method of claim 1 , further comprising:
generating an indication based on a result corresponding to the read operation.
4. The programming method of claim 3 , wherein
the read operation is performed to determine whether the programing data is stored at the selected page; and
a fail indication is generated in response to the determination that the programing data is not stored at the selected page.
5. The programming method of claim 4 , wherein
the programming of the selected page is associated with a memory controller-implemented program; and
the fail indication indicates that stopping of the memory controller-implemented program.
6. The programming method of claim 5 , wherein the fail indication further indicates that debugging of the memory controller-implemented program.
7. The programming method of claim 1 , wherein the programming of the selected page further comprises:
verifying operations with verifying voltages applied on the word line, wherein the verifying operations are performed after corresponding ones of the programming operations to determine whether programmed memory cells have corresponding threshold voltage levels.
8. The programming method of claim 7 , wherein the read operation is performed in response to that a last non-ER state (non-erase state) is programmed in the selected page based on the verifying operations.
9. The programming method of claim 1 , wherein the performing of the read operation is limited to one or more regions of the NAND flash memory device, and the one or more regions comprises at least one of:
a region used for single-level cells (SLC);
a region used for multi-level cells (MLC);
a region used for triple-level cells (TLC);
a region used for quad-level cells (QLC);
a page;
a block; or
a plane.
10. The programming method of claim 3 , further comprising:
delaying a caching of future programming data until after the generating of the indication.
11. A NAND flash memory device comprising:
a memory array comprising pages, each of the pages comprising memory cells corresponding to a word line; and
a peripheral circuit coupled to the word line and configured to:
program a selected page of the pages according to programming data, wherein the programming of the selected page comprises:
programming operations with programming voltages applied on the word line; and
a read operation performed on the selected page.
12. The NAND flash memory device of claim 11 , wherein the read operation is performed without a read command sent by a memory controller that is coupled to the NAND flash memory device.
13. The NAND flash memory device of claim 11 , wherein
the read operation is performed to determine whether the programing data is stored at the selected page; and
the peripheral circuit is further configured to generate a fail indication in response to the determination that the programing data is not stored at the selected page.
14. The NAND flash memory device of claim 11 , wherein the programming of the selected page further comprises:
verifying operations with verifying voltages applied on the word line, wherein the verifying operations are performed after corresponding ones of the programming operations to determine whether programmed memory cells have corresponding threshold voltage levels.
15. The NAND flash memory device of claim 14 , wherein the read operation is performed in response to that a last non-ER state (non-erase state) is programmed in the selected page based on the verifying operations.
16. A memory system comprising:
a memory controller; and
a NAND flash memory device coupled to the memory controller and comprising:
a memory array comprising pages, each of the pages comprising memory cells corresponding to a word line; and
a peripheral circuit coupled to the word line and configured to:
program a selected page of the pages according to programming data, wherein the programming of the selected page comprises:
programming operations with programming voltages applied on the word line; and
a read operation performed on the selected page; and
generate a fail indication upon determining that the programing data is not stored at the selected page according to the read operation.
17. The memory system of claim 16 , wherein the read operation is performed without a read command sent by the memory controller.
18. The memory system of claim 16 , wherein
the programming of the selected page is associated with a memory controller-implemented program; and
the fail indication indicates that stopping of the memory controller-implemented program.
19. The memory system of claim 18 , wherein the fail indication further indicates that debugging of the memory controller-implemented program.
20. The memory system of claim 16 , wherein
the programming of the selected page further comprises verifying operations with verifying voltages applied on the word line;
the verifying operations are performed after corresponding ones of the programming operations to determine whether programmed memory cells have corresponding threshold voltage levels; and
the read operation is performed in response to that a last non-ER state (non-erase state) is programmed in the selected page based on the verifying operations.