IP Library › Granted Patent US 12,218,022
Granted Patent B2
US 12,218,022 · App. 18/355,799 · Granted Feb 4, 2025

Passivation structure with planar top surfaces

Inventors: Yi-Hsiu Chen (Hsinchu, TW); Wen-Chih Chiou (Zhunan Township, TW); Chen-Hua Yu (Hsinchu, TW)
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
H01L23/3171H01L21/56H01L23/49816H01L23/49822H01L23/49833H01L23/49838H01L23/5385H01L23/5386H01L24/03H01L24/05H01L24/11H01L24/13H01L24/16H01L24/19H01L24/20H01L24/24H01L24/73H01L25/0652H01L2224/03916H01L2224/05017H01L2224/1191H01L2224/13022H01L2224/13026H01L2224/16147H01L2224/16235H01L2224/211H01L2224/24145H01L2224/24225H01L2224/73204H01L2225/06513H01L2225/06517H01L2225/0652H01L2225/06541H01L2225/06548
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Quick Facts
Patent No.
US 12,218,022
App. No.
18/355,799
Granted
Feb 4, 2025
Kind
B2
Abstract

A method includes forming a first passivation layer, forming a metal pad over the first passivation layer, forming a planarization layer having a planar top surface over the metal pad, and patterning the planarization layer to form a first opening. A top surface of the metal pad is revealed through the first opening. The method further includes forming a polymer layer extending into the first opening, and patterning the polymer layer to form a second opening. The top surface of the metal pad is revealed through the second opening.

Claims (42)

1. A structure comprising:

a metal pad;

a passivation layer, with a portion of the passivation layer overlapping a part of the metal pad;

a planarization layer comprising a planar top surface, wherein the planar top surface comprises:

a first part overlapping the metal pad; and

a second part vertically offset from the metal pad;

a polymer layer comprising:

a first portion overlapping the planarization layer; and

a second portion extending into the planarization layer and the passivation layer to contact the metal pad; and

a conductive feature in the polymer layer to contact the metal pad.

2. The structure of claim 1 , wherein both of the passivation layer and the planarization layer comprise inorganic dielectric materials.

3. The structure of claim 1 , wherein the planarization layer forms a non-planar bottom interface with the passivation layer.

4. The structure of claim 1 , wherein the passivation layer comprises a first edge overlapping the metal pad, and the planarization layer comprises a second edge overlapping the metal pad, and wherein the second edge is continuously joined to the first edge.

5. The structure of claim 4 , wherein the polymer layer contacts both of the first edge and the second edge.

6. The structure of claim 4 , wherein the second edge is vertically aligned to the first edge.

7. The structure of claim 1 , wherein the conductive feature comprises:

a conductive adhesion layer; and

a conductive region on the conductive adhesion layer.

8. The structure of claim 1 , wherein the conductive feature comprises a solder region.

9. The structure of claim 1 , wherein the passivation layer further comprises an additional portion vertically offset from the metal pad.

10. The structure of claim 1 further comprising an additional passivation underlying and contacting the passivation layer.

11. The structure of claim 1 , wherein the metal pad comprises a bump protruding higher than remaining portions of the metal pad, wherein the bump is in contact with the conductive feature.

12. A structure comprising:

a metal pad;

a first passivation layer on a sidewall and a top surface of the metal pad, wherein the first passivation layer comprises a first edge;

a planarization layer over the first passivation layer, wherein the planarization layer comprises a second edge continuously joined to the first edge; and

a polymer layer comprising:

an upper portion over the planarization layer; and

a lower portion in the planarization layer and the first passivation layer to contact the metal pad, wherein the lower portion contacts both of the first edge and the second edge.

13. The structure of claim 12 , wherein both of the first edge and the second edge are vertical.

14. The structure of claim 12 , wherein the second edge is vertically aligned to the first edge.

15. The structure of claim 12 further comprising a conductive feature in the polymer layer, wherein the conductive feature overlaps and contacts the metal pad.

16. The structure of claim 15 , wherein top surfaces of the conductive feature and the polymer layer are coplanar.

17. The structure of claim 12 , wherein the metal pad comprises a center portion comprising a first top surface, and an edge portion comprising a second top surface, and wherein the second top surface is higher than the first top surface.

18. A structure comprising:

a first passivation layer;

a conductive feature comprising a conductive via extending into the first passivation layer, and a conductive pad over the first passivation layer;

a second passivation layer comprising a portion over the conductive feature;

a planarization layer over the second passivation layer; and

a polymer layer comprising a portion over and contacting the conductive pad, wherein the polymer layer contacts both of the second passivation layer and the planarization layer.

19. The structure of claim 18 , wherein the polymer layer contacts top surfaces of both of the second passivation layer and the planarization layer.

20. The structure of claim 18 , wherein the polymer layer contacts edges of both of the second passivation layer and the planarization layer.

Continuity (3)
Continuation 17324836 · May 19, 2021
Provisional Application 63148647 · Feb 12, 2021
Related Publication 20230360992A1 · Nov 9, 2023
References Cited (14)
US 6153517A · Chuang et al. · 2000 [cited by applicant]
US 7470988B2 · Lin et al. · 2008 [cited by applicant]
US 10446522B2 · Lin et al. · 2019 [cited by applicant]
US 10962711B2 · Chang et al. · 2021 [cited by applicant]
US 11817361B2 · Chen · 2023 [cited by examiner]
US 20060063371A1 · Lin · 2006 [cited by examiner]
US 20110186987A1 · Wang et al. · 2011 [cited by applicant]
US 20170221789A1 · Chen · 2017 [cited by applicant]
US 20170309588A1 · Wu et al. · 2017 [cited by applicant]
US 20240194723A1 · Tandon · 2024 [cited by examiner]
DE 102016110270A1 · 2017 [cited by applicant]
DE 102020125330A1 · 2021 [cited by applicant]
TW 201639103A · 2016 [cited by applicant]
TW 202021084A · 2020 [cited by applicant]